ECH8615 Ordering number : ENA0301 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8615 General-Purpose Switching Device Applications Features • • 4V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 Gate-to-Source Voltage VGSS ±20 V --2 A Drain Current (DC) ID V Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --20 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm2✕0.8mm) 1unit 1.3 W Total Power Dissipation PT Tch Mounted on a ceramic board (900mm2✕0.8mm) Channel Temperature Storage Temperature Tstg 1.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Ratings min typ Unit max Zero-Gate Voltage Drain Current IDSS ID=--1mA, VGS=0V VDS=--60V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) yfs VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--1A RDS(on)1 RDS(on)2 ID=--1A, VGS=--10V ID=--0.5A, VGS=--4V Input Capacitance Ciss 660 pF Output Capacitance Coss VDS=--20V, f=1MHz VDS=--20V, f=1MHz 54 pF 42 pF Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS Conditions Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time Marking : FH td(off) tf --60 V ±10 µA µA --2.6 V 160 210 mΩ 210 295 mΩ --1 --1.2 2.1 3.5 S VDS=--20V, f=1MHz See specified Test Circuit. 10.5 ns See specified Test Circuit. 7.0 ns See specified Test Circuit. 93 ns See specified Test Circuit. 30 ns Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80906 / 12506PE MS IM TB-00001931 No. A0301-1/4 ECH8615 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg nC Qgs VDS=--30V, VGS=--10V, ID=--2A VDS=--30V, VGS=--10V, ID=--2A 15 Gate-to-Source Charge 2.1 nC Gate-to-Drain “Miller” Charge Qgd VDS=--30V, VGS=--10V, ID=--2A 2.7 Diode Forward Voltage VSD IS=--2A, VGS=0V Package Dimensions unit : mm 7011A-001 --0.82 8 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.25 2.9 0.15 5 2.3 4 0.65 1 2 3 4 Top view 0.3 0.9 0.25 2.8 0 to 0.02 1 V Electrical Connection Top View 8 nC --1.2 0.07 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 Bottom View Switching Time Test Circuit VDD= --30V VIN 0V --10V ID= --1A RL=30Ω VOUT VIN D PW=10µs D.C.≤1% G ECH8615 P.G 50Ω S No. A0301-2/4 ECH8615 ID -- VDS VDS= --10V VGS= --2.5V --0.5 0 --0.6 --0.7 --0.8 --0.9 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --1A 300 ID= --0.5A 200 150 100 50 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V 5 5° = Ta 1.0 C --2 7 5 °C 75 °C 25 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 7 --4V S= G V , 0V 5A --0. = --1 S VG I D= A, --1.0 I D= 250 200 150 100 50 --40 --20 0 20 40 60 80 100 120 140 160 IT10647 IS -- VSD VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 --0.001 --0.2 --0.4 tf 3 2 td(on) 10 7 5 tr Ciss 5 3 2 100 Coss 7 5 3 2 --1.2 IT10649 1000 Ciss, Coss, Crss -- pF 100 7 5 --1.0 f=1MHz 7 td(off) --0.8 Ciss, Coss, Crss -- VDS 2 VDD= --30V VGS= --10V 3 2 --0.6 Diode Forward Voltage, VSD -- V IT10648 SW Time -- ID 1000 7 5 1.0 --0.01 --3.5 IT10645 --0.01 7 5 3 2 3 0.1 --0.01 300 7 5 3 2 VDS= --10V 2 --3.0 Ambient Temperature, Ta -- °C Source Current, IS -- A Forward Transfer Admittance, yfs -- S --16 3 --2.5 350 IT10646 yfs -- ID 10 --2.0 400 0 --60 0 0 --1.5 RDS(on) -- Ta 450 400 250 --1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 350 --0.5 IT10644 RDS(on) -- VGS 450 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 --1.0 C --0.5 C --0.4 --25° --0.3 25° --0.2 Ta= 75° C --0.1 Drain-to-Source Voltage, VDS -- V Switching Time, SW Time -- ns --1 0 0 7 --2 25° --25 C °C --1.0 --3 Ta= 75° C --6 . Drain Current, ID -- A 0V --10. --15 .0 V Drain Current, ID -- A --1.5 ID -- VGS --4 --5. 0V 0V -4.0 V --3 .0V --2.0 Crss 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 IT10650 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT10651 No. A0301-3/4 ECH8615 VGS -- Qg --10 3 2 --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --9 --7 --6 --5 --4 --3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 IT10652 PD -- Ta 1.8 0µ s 1m s ID= --2A 10 DC ms 10 0m op s era tio 3 2 3 2 1 10 --1.0 7 5 --1 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W 3 2 --2 0 ≤10µs IDP= --20A --10 7 5 --0.1 7 5 0 ASO 5 VDS= --30V ID= --2A Operation in this area is limited by RDS(on). n( Ta = 25 °C ) Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 --100 IT10653 Mounted on a ceramic board (900mm2✕0.8mm) 1.6 1.5 1.4 1.3 1.2 To t al 1.0 1u 0.8 di ss ip ati on nit 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10654 Note on usage : Since the ECH8615 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2006. Specifications and information herein are subject to change without notice. PS No. A0301-4/4