EMH2302 Ordering number : EN8726 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EMH2302 General-Purpose Switching Device Applications Features • • The EMH2302 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions P-channel Unit Drain-to-Source Voltage VDSS --30 Gate-to-Source Voltage VGSS ±20 V --2 A Drain Current (DC) ID Drain Current (Pulse) IDP PD PW≤10µs, duty cycle≤1% PT Tch Mounted on a ceramic board (900mm2✕0.8mm) Channel Temperature Storage Temperature Tstg Allowable Power Dissipation Total Dissipation Mounted on a ceramic board (900mm2✕0.8mm) 1unit V --8 A 1.0 W 1.2 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Ratings min typ Unit max ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V --30 IDSS IGSS VGS(off) yfs VDS=--10V, ID=--1mA VDS=--10V, ID=--1A --1.2 RDS(on)1 RDS(on)2 ID=--1A, VGS=--10V ID=--0.5A, VGS=--4V Input Capacitance Ciss pF Coss 65 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz 285 Output Capacitance 52 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 8.4 ns See specified Test Circuit. 15.5 ns td(off) tf See specified Test Circuit. 29 ns See specified Test Circuit. 25.5 ns Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Rise Time Turn-OFF Delay Time Fall Time Marking : MB V(BR)DSS Conditions 1.3 V --1 µA ±10 µA --2.6 2.2 V S 115 150 mΩ 215 310 mΩ Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92706PE MS IM TC-00000040 No.8726-1/4 EMH2302 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--2A 6.7 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--2A 1.1 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--2A 1.05 Diode Forward Voltage VSD IS=--2A, VGS=0V Package Dimensions --0.85 nC --1.2 V Electrical Connection unit : mm (typ) 7045-002 8 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 0.2 4 2.1 5 1.7 8 7 0.125 0.2 0.2 0.5 2.0 0.05 0.75 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 Top view SANYO : EMH8 Switching Time Test Circuit VDD= --15V VIN 0V --10V ID= --1A RL=15Ω VIN D VOUT PW=10µs D.C.≤1% G EMH2302 P.G 50Ω S No.8726-2/4 EMH2302 ID -- VDS --2.5 --3.0V --1.2 --1.0 --0.8 VGS= --2.5V --0.6 --0.4 --2.0 --1.5 --1.0 5°C --25 °C 25°C --1.4 VDS= --10V Ta= 7 --0.5 --0.2 0 0 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V 0 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --1.0A 350 300 ID= --0.5A 250 200 150 100 50 0 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A Forward Transfer Admittance, yfs -- S Ta C 5° 25 °C 7 5 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 V = --4 , VGS 250 A --0.5 I D= 200 0V 1 , V S= -I D= --1.0A G 150 100 50 --40 --20 0 20 40 60 80 100 120 140 160 IT11526 IS -- VSD VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 --0.001 --0.2 --0.4 2 --0.8 --1.0 --1.2 IT11528 Ciss, Coss, Crss -- VDS 1000 VDD= --15V VGS= --10V 3 --0.6 Diode Forward Voltage, VSD -- V IT11527 SW Time -- ID 5 f=1MHz 7 5 100 7 5 tf Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 300 3 2 Drain Current, ID -- A td(off) 3 2 td(on) 10 7 5 tr 3 Ciss 3 2 100 Coss 7 5 Crss 2 1.0 --0.01 --4.0 IT11524 --0.01 7 5 3 0.1 --0.01 --3.5 3 2 2 7 --3.0 Ambient Temperature, Ta -- °C 3 1.0 --2.5 350 5 5 --2.0 400 0 --60 --16 VDS= --10V °C -25 =- --1.5 RDS(on) -- Ta IT11525 yfs -- ID 7 --1.0 Gate-to-Source Voltage, VGS -- V 450 400 0 --0.5 IT11523 RDS(on) -- VGS 450 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --1.0 25°C --0.2 5°C --0.1 Ta= 7 0 --25° C Drain Current, ID -- A --1.6 Drain Current, ID -- A --15.0V --1 0.0V --1.8 ID -- VGS --3.0 --6. -8.0V 0V --4 .0V --2.0 3 2 2 3 5 7 --0.1 2 Drain Current, ID -- A 3 5 7 --1.0 IT11529 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT11530 No.8726-3/4 EMH2302 VGS -- Qg --10 VDS= --10V ID= --2A --8 --10 7 5 --7 3 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --9 --6 --5 --4 --1 3 2 1 2 3 4 5 6 Total Gate Charge, Qg -- nC 7 PD -- Ta 1.2 Allowable Power Dissipation, PD -- W IT11531 1.0 ID= --2A 10 m DC 10 s 0m s op er 3 2 --2 ≤10µs 10 0 1m µs s IDP= --8A --1.0 7 5 --0.1 7 5 --3 0 0 ASO 2 ati on Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT11543 M ou nt 0.8 ed on ac er am ic 0.6 bo ar d( 90 0.4 0m m2 ✕ 0.8 m 0.2 m )1 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11544 Note on usage : Since the EMH2302 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. 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Specifications and information herein are subject to change without notice. PS No.8726-4/4