ECH8621R Ordering number : EN8718 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8621R General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting. Drain common specifications. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 Gate-to-Source Voltage VGSS ±12 V 8 A Drain Current (DC) ID V Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 40 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm2✕0.8mm) 1unit 1.4 W Total Dissipation PT Tch Mounted on a ceramic board (900mm2✕0.8mm) Channel Temperature Storage Temperature Tstg 1.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Ratings min typ Unit max Zero-Gate Voltage Drain Current IDSS ID=1mA, VGS=0V VDS=20V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) yfs VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=4A RDS(on)1 RDS(on)2 ID=4A, VGS=4.5V ID=4A, VGS=4.0V RDS(on)3 RDS(on)4 ID=4A, VGS=3.1V ID=2A, VGS=2.5V Input Capacitance Ciss 1250 pF Output Capacitance Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 240 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 210 pF Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : WF V(BR)DSS Conditions 20 V 0.5 1 µA ±10 µA 1.3 V 6.6 11 11 15.5 20 mΩ S 11.2 16 21 mΩ 12 18.5 24 mΩ 13.2 22 30 mΩ Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82306 / 62006PE MS IM TB-00002065 No.8718-1/4 ECH8621R Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 544 Rise Time tr td(off) See specified Test Circuit. 2200 ns See specified Test Circuit. 4400 ns See specified Test Circuit. Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge 3700 ns VDS=10V, VGS=4.5V, ID=8A 15 nC 2.5 nC 5 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4.5V, ID=8A VDS=10V, VGS=4.5V, ID=8A Diode Forward Voltage VSD IS=8A, VGS=0V Package Dimensions unit : mm 7011A-003 0.85 7 6 0.25 2.9 0.15 5 2.3 2.8 0 to 0.02 2 3 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain Top view 4 0.3 0.9 0.25 1 0.65 V 5 Top View 1 1.2 Electrical Connection 8 8 ns 0.07 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 Bottom View Switching Time Test Circuit VDD=10V VIN 4V 0V ID=4A RL=2.5Ω VIN D VOUT PW=10µs D.C.≤1% Rg G ECH8621R P.G 50Ω S Rg=1kΩ No.8718-2/4 ECH8621R ID -- VDS 10 12 5 1.5V 4 3 8 6 4 2 --25°C 2.0V 6 10 C 2.5V 7 Ta=7 5° Drain Current, ID -- A 3.0 V 8 Drain Current, ID -- A VDS=10V 3.5 V 4.5V 9 ID -- VGS 14 25°C 2 1 VGS=1.0V 1.0 1.5 Drain-to-Source Voltage, VDS -- V 0 24 ID=4A 20 2A 18 16 14 12 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 2 = Ta 5 C 5° --2 C 75° °C 25 3 2 1.0 0.1 3 5 7 1.0 2 3 5 15 10 0 50 100 150 200 IT11236 IS -- VSD VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 7 0 10 IT08318 100 7 5 3 2 10000 5 Drain Current, ID -- A td (off) 7 tf 3 tr 2 1000 7 td(on) 5 3 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT11237 0.2 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V SW Time -- ID 2 Switching Time, SW Time -- ns 20 0.001 2 Drain Current, ID -- A 2 0.1 25 10 7 5 3 2 VDS=10V 7 VG A, Ambient Temperature, Ta -- °C Source Current, IS -- A Forward Transfer Admittance, yfs -- S 10 10 2.5 IT08315 V 2.5 S= 1V 2 =3. I D= GS .0V V , 4A =4 I D= , VGS A 4 V I D= =4.5 VGS , A 4 I D= 30 IT11235 yfs -- ID 3 2.0 35 5 --50 10 2 1.5 RDS(on) -- Ta 40 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 26 1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 28 22 0.5 IT08314 RDS(on) -- VGS 30 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 2.0 --25 °C 0.5 5°C 25°C 0 Ta= 7 0 ASO ≤10µs IDP=40A 1m ID=8A 10 7 5 3 2 s 10 DC ms 10 0m op era s tio 1.0 7 5 3 2 0.1 7 5 3 2 IT08319 n( Ta = 25 Operation in this area is limited by RDS(on). °C ) Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT08322 No.8718-3/4 ECH8621R PD -- Ta Allowable Power Dissipation, PD -- W 1.6 Mounted on a ceramic board (900mm2✕0.8mm) 1unit 1.5 1.4 1.2 1.0 To t 0.8 1u al D iss ip ni t at io n 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT08323 Note on usage : Since the ECH8621R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2006. Specifications and information herein are subject to change without notice. PS No.8718-4/4