FW168 Ordering number : ENA0386 SANYO Semiconductors DATA SHEET FW168 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • 4V drive. Low ON-resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 Gate-to-Source Voltage VGSS ±20 V --4 A Drain Current (DC) ID V Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --16 A Allowable Power Dissipation PD Mounted on a ceramic board (2000mm2✕0.8mm) 1unit 1.4 W Total Dissipation PT Mounted on a ceramic board (2000mm2✕0.8mm) 1.7 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Ratings min typ Unit max Zero-Gate Voltage Drain Current IDSS ID=--1mA, VGS=0V VDS=--30V, VGS=0V Gate-to-Source Leakage Current Forward Transfer Admittance IGSS VGS(off) yfs VGS= ±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--4A ID=--4A, VGS=--10V ID=--2A, VGS=--4.5V 54 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 88 125 mΩ ID=--2A, VGS=--4V VDS=--10V, f=1MHz 100 145 mΩ Input Capacitance RDS(on)3 Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz VDS=--10V, f=1MHz Cutoff Voltage Marking : W168 V(BR)DSS Conditions --30 V --1.2 3.7 --1 µA ±10 µA --2.6 V 6.2 S 72 mΩ 590 pF 120 pF 115 pF Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71206 / 41006PA MS IM TB-00002238 No. A0386-1/4 FW168 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 8 ns Rise Time tr td(off) See specified Test Circuit. 70 ns See specified Test Circuit. 57 ns tf See specified Test Circuit. 59 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--4A 12.8 nC Gate-to-Source Charge Qgs nC Qgd VDS=--10V, VGS=--10V, ID=--4A VDS=--10V, VGS=--10V, ID=--4A 1.5 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=--4A, VGS=0V 4.3 Package Dimensions unit : mm 7005-003 VDD= --15V 0.3 0.2 1.5 1.8 MAX VOUT PW=10µs D.C.≤1% 6.0 4.4 4 G 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 FW168 P.G 50Ω S 0.1 5.0 ID= --4A RL=3.75Ω VIN D 0.43 0.595 V 0V --10V 5 1 --1.5 Switching Time Test Circuit VIN 8 nC --0.87 1.27 SANYO : SOP8 ID -- VDS V -8.0V --6 --4.0 --2.0 --1.5 --1.0 --1.0 --0.5 --0.5 --25° C --1.5 --2.5 Ta=7 5°C --2.0 --3.0 25 °C VGS= --2.5V Drain Current, ID -- A --2.5 VDS= --10V --3.5 --10.0 --3.0 .0V --3 V --3.5 ID -- VGS --4.5 --5.0 --4.0 Drain Current, ID -- A --4. 5 --4. V 0V .0V --4.5 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT09620 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V --3.5 IT09621 No. A0386-2/4 FW168 RDS(on) -- VGS 200 RDS(on) -- Ta 180 180 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --2A --4A 140 120 100 80 60 40 20 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V 20 3 °C -25 =a T °C 75 1.0 --20 0 20 40 60 80 100 120 140 160 IT10946 IS -- VSD VGS=0V 5 C 25° 2 --40 Ambient Temperature, Ta -- °C Source Current, IS -- A Forward Transfer Admittance, yfs -- S 40 --10 7 5 3 2 3 2 --1.0 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A --0.1 --0.4 5 7 --10 IT09624 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 7 5 --1.1 IT09625 Ciss, Coss, Crss -- VDS 2 f=1MHz VDD= --15V VGS= --10V 1000 3 td(off) 100 7 5 tf 3 2 td(on) 10 7 5 7 Ciss, Coss, Crss -- pF 2 tr Ciss 5 3 2 Coss Crss 100 7 3 5 2 3 1.0 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 0 5 7 --10 IT09626 --10 7 5 Drain Current, ID -- A --8 --7 --6 --5 --4 --3 3 2 --1 3 2 1 2 3 4 5 6 7 8 9 10 Total Gate Charge, Qg -- nC 11 12 13 IT10947 --20 --25 --30 IT09627 ASO ≤10µs IDP= --16A 10 1m 0µ s s ID= --4A DC --1.0 7 5 --0.1 7 5 0 --15 3 2 --2 0 --10 3 2 VDS= --10V ID= --4A --9 --5 Drain-to-Source Voltage, VDS -- V VGS -- Qg --10 Gate-to-Source Voltage, VGS -- V 60 7 5 0.1 --0.01 Switching Time, SW Time -- ns --16 VDS= --10V 7 80 IT10945 yfs -- ID 10 100 --25° C --2 V --4.0 S= VG , --2A .5V I D= = --4 S VG , --2A V I D= = --10.0 , V GS A 4 -I D= 120 0 --60 0 0 140 25°C 160 160 Ta= 75° C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 10 m 10 0m s s op er ati on Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (2000mm2✕0.8mm) 1unit --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT10948 No. A0386-3/4 PD(FET 1) -- PD(FET 2) 1.6 M Allowable Power Dissipation, PD -- W Allowable Power Dissipation (FET 1), PD -- W FW168 ou 1.4 nte do na 1.2 ce ram ic 1.0 bo ard 0.8 (2 00 0m m2 ✕0 0.6 0.4 .8m m) 0.2 0 PD -- Ta 1.8 1.7 1.6 Mounted on a ceramic board (2000mm2✕0.8mm) 1.4 1.2 To t al 1.0 1u nit 0.8 di ss ip ati on 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Allowable Power Dissipation (FET 2), PD -- W 1.6 IT10949 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10950 Note on usage : Since the FW168 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2006. Specifications and information herein are subject to change without notice. PS No. A0386-4/4