SANYO LB11620T

Ordering number : ENA0662
LB11620T
Monolithic Digital IC
Brushless Motor Driver
Overview
The LB11620T is a direct PWM drive predriver IC that is optimal for three-phase power brushless motors. A motor driver
circuit with the desired output capability (voltage and current) can be implemented by adding discrete transistors or other
power devices to the outputs of this IC. Since the LB11620T is provided in a miniature package, it is also appropriate for
use with miniature motors as well.
Features
• Three-phase bipolar drive
• Direct PWM drive (input of either a control voltage or a variable-duty PWM signal)
• Built-in forward/reverse switching circuit
• Full complement of protection circuits (current limiter, low-voltage, and automatic recovery lock (motor constraint)
protection circuits)
• Selectable Hall sensor signal pulse output
Specifications
Maximum Ratings at Ta = 25°C
Parameter
Supply voltage 1
Symbol
VCC max
Conditions
Ratings
Unit
VCC pin
18
V
30
mA
Output current
IO max
UL, VL, WL, UH, VH, WH pins
Allowable power dissipation
Pd max
*Mounted on a circuit board.
0.8
W
Operating temperature
Topr
-20 to +100
°C
Storage temperature
Tstg
-55 to +150
°C
* Mounted on a circuit board : 114.3mm×76.1mm×1.6mm, glass epoxy board.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
22807 MS PC 20061227-S00002 No.A0662-1/11
LB11620T
Recommended Operating Ranges at Ta = 25°C
Parameter
Symbol
Conditions
Supply voltage range 1-1
VCC1-1
VCC pin
Supply voltage range 1-2
VCC1-2
VCC pin, with VCC shorted to VREG
Output current
IO
Ratings
Unit
8 to 17
4.5 to 5.5
UL, VL, WL, UH, VH, WH pins
V
V
25
mA
mA
5 V constant voltage output current
IREG
-30
HP pin voltage
VHP
0 to 17
V
HP pin output current
IHP
0 to 15
mA
RD pin voltage
VRD
0 to 17
V
RD pin output current
IRD
0 to 15
mA
Electrical Characteristics at Ta = 25°C, VCC = 12V
Parameter
Symbol
Ratings
Conditions
min
Supply voltage 1
typ
ICC1
Unit
max
12
16
mA
5V constant voltage output (VREG pin)
Output voltage
VREG
5.0
5.3
V
Line regulation
ΔVREG1
VCC = 8 to 17V
4.7
40
100
mV
Load regulation
ΔVREG2
IO = -5 to -20mA
10
30
mV
Temperature coefficient
ΔVREG3
Design target
0
mV/°C
Low-voltage protection circuit (VREG pin)
Operating voltage
VSDL
3.5
3.7
3.9
V
Clear voltage
VSDH
3.95
4.15
4.35
V
Hysteresis
ΔVSD
0.3
0.45
0.6
V
0.2
0.5
V
0.9
1.2
V
10
μA
Output Block
Output voltage 1-1
VOUT1-1
Output voltage 1-2
Low level IO = 400μA
VOUT1-2
Low level IO = 10mA
Output voltage 2
VOUT2
High level IO = -20mA
Output leakage current
IOleak
VCC-1.1
VCC-0.9
V
Hall Amplifier Block
Input bias current
IHB (HA)
Common-mode input voltage range 1
VICM1
Common-mode input voltage range 2
VICM2
-2
When a Hall effect sensor is used
For single-sided input bias
μA
-0.5
0.5
VCC-2.0
V
0
VCC
V
(Hall IC application)
Hall input sensitivity
80
mVp-p
Hysteresis
ΔVIN (HA)
15
24
40
mV
Input voltage low → high
VSLH (HA)
5
12
20
mV
Input voltage high → low
VSHL (HA)
-20
-12
-5
mV
High-level output voltage
VOH (PWM)
2.75
3.0
3.25
V
Low-level output voltage
VOL (PWM)
1.2
1.35
1.5
V
-120
-90
-65
μA
1.4
1.6
1.9
Vp-p
PWM Oscillator (PWM pin)
External capacitor charge current
ICHG
Oscillator frequency
f (PWM)
Amplitude
V (PWM)
VPWM = 2.1V
C = 2000pF
22
kHz
Continued on next page
No.A0662-2/11
LB11620T
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
EI+ pin
Input bias current
Common-mode input voltage range
IB (CTL)
-1
1
μA
VICM
0
VREG-1.7
V
Input voltage 1
VCTL1
Output duty 100%
3.0
V
Input voltage 2
VCTL2
Output duty 0%
1.35
V
Input voltage 1L
VCTL1L
Design target value.
2.82
V
1.29
V
3.18
V
1.44
V
When VREG = 4.7V, 100%
Input voltage 2L
VCTL2L
Design target value.
When VREG = 4.7V, 0%
Input voltage 1H
VCTL1H
Design target value.
When VREG = 5.3V, 100%
Input voltage 2H
VCTL2H
Design target value.
When VREG = 5.3V, 0%
HP pin
Output saturation voltage
Output leakage current
VHPL
IO = 10mA
IHPleak
VO = 18V
0.2
0.5
V
10
μA
CSD oscillator (CSD pin)
High-level output voltage
VOH (CSD)
2.7
3.0
3.3
V
Low-level output voltage
VOL (CSD)
0.7
1.0
1.3
V
μA
External capacitor charge current
ICHG1
VCSD = 2V
-3.15
-2.5
-1.85
External capacitor discharge current
ICHG2
VCSD = 2V
0.1
0.14
0.18
Charge/discharge current ratio
RCSD
Charge current /discharge current
15
18
21
Low-level output voltage
VRDL
IO = 10mA
0.2
0.5
V
Output leakage current
IL (RD)
VO = 18V
10
μA
VRF
RF-GND
0.275
V
μA
Times
RD pin
Current limiter circuit (RF pin)
Limiter voltage
0.225
0.25
PWMIN pin
Input frequency
f (PI)
50
kHz
High-level input voltage
VIH (PI)
2.0
VREG
V
Low-level input voltage
VIL (PI)
0
1.0
V
Input open voltage
VIO (PI)
VREG-0.5
VREG
V
Hysteresis
VIS (PI)
High-level input current
IIH (PI)
VPWMIN = VREG
Low-level input current
IIL (PI)
VPWMIN = 0V
0.2
0.25
0.4
V
-10
0
10
μA
-130
-90
μA
F/R pin
High-level input voltage
VIH (FR)
2.0
VREG
V
Low-level input voltage
VIL (FR)
0
1.0
V
Input open voltage
VIO (FR)
VREG-0.5
Hysteresis
VIS (FR)
0.2
High-level input current
IIH (FR)
Low-level input current
IIL (FR)
High-level input voltage
VIH (N1)
2.0
VREG
V
Low-level input voltage
VIL (N1)
0
1.0
V
Input open voltage
VIO (N1)
High-level input current
IIH (N1)
VN1 = VREG
Low-level input current
IIL (N1)
VN1 = 0V
VREG
V
0.25
0.4
V
-10
0
10
-130
-90
μA
μA
N1 pin
VREG-0.5
-10
0
-130
-100
VREG
V
10
μA
μA
No.A0662-3/11
LB11620T
Package Dimensions
unit : mm (typ)
3260A
Pd max – Ta
Allowable power dissipation, Pd max – W
1.2
6.5
0.5
6.4
13
4.4
24
12
1
0.5
0.15
0.22
(1.0)
1.2max
(0.5)
0.8
Specified circuit board : 114.3×76.1×1.6mm3
glass epoxy board
Mounted on a circuit board
0.4
0.32
0
– 20
0
20
40
60
80
100
120
0.08
Ambient temperature, Ta – °C
SANYO : TSSOP24(225mil)
Pin Assignment
VCC
VREG
EI+
N1
HP
F/R
24
23
22
21
20
19
RD
PWM
IN3+
IN3-
17
16
15
14
13
8
9
10
11
12
UL
IN1-
IN1+
IN2-
IN2+
PWMIN CSD
18
LB11620T
1
GND
2
3
RF
WH
4
WL
5
6
VH
VL
7
UH
• Three-Phase Logic Truth Table (IN = “H” indicates the state where IN+ > IN-)
F/R = “L”
F/R=“H”
Output
IN1
IN2
IN3
IN1
IN2
IN3
1
H
L
H
L
H
L
PWM
VH
UL
2
H
L
L
L
H
H
WH
UL
3
H
H
L
L
L
H
WH
VL
4
L
H
L
H
L
H
UH
VL
5
L
H
H
H
L
L
UH
WL
6
L
L
H
H
H
L
VH
WL
• PWMIN pin
Input state
State
High or open
Output off
Low
Output on
If the PWM pin is not used, the input must be held at the low level.
• N1 pin
Input state
HP output
High or open
Three Hall sensor synthesized output
Low
Single Hall sensor output
No.A0662-4/11
LB11620T
Pin Functions
Pin No.
Pin
1
GND
2
RF
Description
Ground
Output current detection. The current detection resistor (Rf) voltage is sensed by the RF pin to implement
current detection.
The maximum output current is set by RF to be IOUT = 0.25/Rf.
7
UH
Outputs (PWM outputs).
5
VH
These are push-pull outputs.
3
WH
8
UL
Outputs
6
VL
These are push-pull outputs.
4
WL
IN1+, IN1-
10, 9
14, 13
IN2+, IN2IN3+, IN3-
15
PWM
12, 11
Hall sensor inputs from each motor phase.
The logic high state indicates that IN+ > IN-.
If inputs are provided by a Hall effect sensor IC, the common-mode input range is expanded by biasing
either the + or - input.
Functions as both the PWM oscillator frequency setting pin and the initial reset pulse setting pin. Connect
a capacitor between this pin and ground.
16
RD
Lock (motor constrained) detection state output. This output is turned on when the motor is turning and off
when the lock protection function detects that the motor has been stopped. This is an open collector
output.
17
CSD
Sets the operating time for the lock protection circuit.
Connect a capacitor between this pin and ground. Connect this pin to ground if the lock protection
function is not used.
18
PWMIN
PWM pulse signal input. The output goes to the drive state when this pin is low, and to the off state when
this pin is high or open. To use this pin for control, a CTL amplifier input such that the TOC pin voltage
goes to the 100% duty state must be provided.
19
F/R
20
HP
Forward/reverse control input
Hall signal output (HP output). This provides either a single Hall sensor output or a synthesized 3-sensor
output.
21
N1
Hall signal output (HP output) selection
22
EI+
CTL amplifier + (noninverting) input. The PWMIN pin must be held at the low level to use this input for
23
VREG
motor control
5V regulator output (Used as the control circuit power supply. A low-voltage protection circuit is built in.)
Connect a capacitor between this pin and ground for stabilization.
24
VCC
Power supply. Connect a capacitor between this pin and ground to prevent noise and other disturbances
from affecting this IC.
No.A0662-5/11
LB11620T
Hall Sensor Signal Input/Output Timing Chart
F/R = " L "
IN1
IN2
IN3
UH
VH
WH
UL
VL
WL
F/R = " H "
IN1
IN2
IN3
UH
VH
WH
UL
VL
WL
Sections shown in gray are PWM output periods.
No.A0662-6/11
CTL
HP
VREG
PWMN
PWM
EI+
PWM
IN
PWM
OSC
+
-
F/R
F/R
IN1
N1
COMP
VCC
IN1+ IN1-
HP
LOGIC
RD
RD
VREG
LVSD
IN2+ IN2-
IN3+ IN3-
HALL
HYS AMP
HALL LOGIC
CONTROL
LOGIC
CSD
OSC
CSD
+
GND
CURR
LIM
PRI
DRIVER
VREG
RF
WL
WH
VL
VH
UL
UH
VCC
VREG
+
5V
+
VM
LB11620T
Block Diagram and Application Example 1
Bipolar transistor drive (high side PWM)
using a 5V power supply
No.A0662-7/11
HP
VREG
PWMN
PWM
EI+
PWM
IN
PWM
OSC
+
-
F/R
F/R
IN1
N1
COMP
VCC
IN1+ IN1-
HP
LOGIC
RD
RD
VREG
LVSD
IN2+ IN2-
IN3+ IN3-
HALL
HYS AMP
HALL LOGIC
CONTROL
LOGIC
CSD
OSC
CSD
+
GND
CURR
LIM
PRI
DRIVER
VREG
RF
WL
WH
VL
VH
UL
UH
VCC
VREG
TR
TR
TR
+
VM(12V)
LB11620T
Application Example 2
54 MOS transistor drive (low side PWM)
using a 12V single-voltage power supply
No.A0662-8/11
HP
VREG
PWMN
PWM
EI+
PWM
IN
PWM
OSC
+
-
F/R
F/R
IN1
N1
COMP
VCC
IN1+ IN1-
HP
LOGIC
RD
RD
VREG
LVSD
IN2+ IN2-
IN3+ IN3-
HALL
HYS AMP
HALL LOGIC
CONTROL
LOGIC
CSD
OSC
CSD
+
GND
CURR
LIM
PRI
DRIVER
VREG
RF
WL
WH
VL
VH
UL
UH
VCC
VREG
+
VCC(12V)
+
VM(24V)
LB11620T
Application Example 3
MOS transistor drive (low side PWM)
using a VCC = 12V, VM = 24V power supply system
No.A0662-9/11
HP
VREG
PWMN
PWM
EI+
PWM
IN
PWM
OSC
+
-
F/R
F/R
IN1
N1
COMP
VCC
IN1+ IN1-
HP
LOGIC
RD
RD
VREG
LVSD
IN2+ IN2-
IN3+ IN3-
HALL
HYS AMP
HALL LOGIC
CONTROL
LOGIC
CSD
OSC
CSD
+
GND
CURR
LIM
PRI
DRIVER
VREG
RF
WL
WH
VL
VH
UL
UH
VCC
VREG
+
VM(24V)
LB11620T
Application Example 4
MOS transistor drive (low side PWM)
using a 24V single-voltage power supply
No.A0662-10/11
LB11620T
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
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This catalog provides information as of February, 2007. Specifications and information herein are subject
to change without notice.
PS No.A0662-11/11