2SJ538 Ordering number : ENA0519 SANYO Semiconductors DATA SHEET 2SJ538 P-Channel Silicon MOSFET Load Switching Applications Features • • Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 Gate-to-Source Voltage VGSS ±20 V ID --15 A Drain Current (DC) Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V --45 A 1.0 W Allowable Power Dissipation PD 30 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Ratings min typ Unit max ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V --30 IDSS IGSS VGS(off) yfs VDS=--10V, ID=--1mA VDS=--10V, ID=--8A --1.0 RDS(on)1 RDS(on)2 ID=--8A, VGS=--10V ID=--4A, VGS=--4V Input Capacitance Ciss 2000 pF Output Capacitance Coss VDS=--10V, f=1MHz VDS=--10V, f=1MHz 1000 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 470 pF Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS Conditions 10 V --100 µA ±10 µA --2.5 V 15 S 24 30 mΩ 40 52 mΩ Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O0406PA MS IM TC-00000219 No. A0519-1/4 2SJ538 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 20 Rise Time tr td(off) See specified Test Circuit. 70 ns See specified Test Circuit. 210 ns See specified Test Circuit. Fall Time tf Qg Total Gate Charge 140 ns VDS=--10V, VGS=--10V, ID=--8A 58 nC 7 nC 17 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--8A VDS=--10V, VGS=--10V, ID=--8A Diode Forward Voltage VSD IS=--8A, VGS=0V --1.0 Package Dimensions Package Dimensions unit : mm (typ) 7518-004 unit : mm (typ) 7003-004 0.5 1.5 1.5 4 5.5 7.0 5.5 4 2.3 6.5 5.0 0.5 0.5 1 2 2.3 0.8 1.2 1 7.5 0.8 1.6 0.6 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2 3 0 to 0.2 0.6 0.5 3 2.5 0.85 0.85 0.7 SANYO : TP V 7.0 2.3 6.5 5.0 --1.5 1.2 Turn-OFF Delay Time ns 1.2 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Switching Time Test Circuit VDD= --15V VIN ID= --8A RL=1.87Ω 0V --10V VOUT D VIN PW=10µs D.C.≤1% G P.G 50Ω 2SJ538 S No. A0519-2/4 2SJ538 ID -- VDS --16 VGS= --3V --8 C --6 --10 --6 --4 --4 --2 --2 0 0 --25 ° --8 --12 25° C --10 --14 5°C --12 Ta= 7 --14 Drain Current, ID -- A V --4V --15 Drain Current, ID -- A --16 VDS= --10V --18 --8 V --10 V --18 ID -- VGS --20 --6 V --5 V --20 0 --0.2 --0.4 --0.6 --0.8 0 --1.0 Drain-to-Source Voltage, VDS -- V --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 80 --0.5 IT11532 --4.5 IT11533 RDS(on) -- Ta 80 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --4A 30 20 10 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 Gate-to-Source Voltage, VGS -- V 2 yfs -- ID °C 2 = Ta 5 --2 75 1.0 °C 7 5 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --1.0 IT11536 Drain Current, ID -- A SW Time -- ID 7 100 tr 5 3 10 --0.1 --20 0 20 40 60 80 100 120 140 160 IT11535 IS -- VSD VGS=0V --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.4 --0.6 --0.8 --1.0 --1.2 IT11537 Ciss, Coss, Crss -- VDS f=1MHz 7 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns tf 2 --40 Diode Forward Voltage, VSD -- V td(off) 7 10 10000 5 2 20 --0.01 7 5 3 2 --0.001 --0.2 VDD= --15V VGS= --10V 3 V --10 S= 8A, V G I D= -- 30 3 2 25 °C = --4 VGS Ambient Temperature, Ta -- °C 10 3 40 IT11534 VDS= --10V 7 5 --4A, I D= 0 --60 --20 Source Current, IS -- A Forward Transfer Admittance, yfs -- S 3 V 50 5°C 40 --8A C 50 60 --25° 60 70 25°C 70 Ta= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 3 Ciss 2 Coss 1000 7 5 Crss 3 2 td(on) 100 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 7 --10 IT11538 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT11539 No. A0519-3/4 2SJ538 VGS -- Qg --10 --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --9 --7 --6 --5 --4 --3 --2 --1 0 0 10 20 30 40 50 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W 60 100µs IDP= --45A ID= --15A DC --10 7 5 3 2 1m s 10 ms op era tio n --1.0 7 5 3 2 Operation in this area is limited by RDS(on). --0.1 7 5 3 2 Tc=25°C Single pulse --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V IT11540 PD -- Ta 1.2 ASO --100 7 5 3 2 VDS= --10V ID= --8A 2 3 5 IT11545 PD -- Tc 35 30 1.0 25 0.8 20 0.6 15 0.4 10 0.2 5 0 0 0 20 40 60 80 100 120 Amibient Tamperature, Ta -- °C 140 160 IT11546 0 20 40 60 80 100 120 Case Tamperature, Tc -- °C 140 160 IT11547 Note on usage : Since the 2SJ538 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2006. Specifications and information herein are subject to change without notice. PS No. A0519-4/4