SEMIKRON SKM195GB126D

SKM 195GB126D ...
Absolute Maximum Ratings
Symbol Conditions
IGBT
)
- *+ ,
$
- /+0 ,
*+,! &
/*00
**0
%
10 ,
/"0
%
400
%
6 *0
- /*+ ,
/0
:
*+ ,
/<0
%
10 ,
//+
%
*00
%
- /+0 ,
>00
%
*+ ,
/<0
%
10 ,
//+
%
*00
%
>00
%
*00
%
-
?@0 === A/+0
,
?@0 === A/*+
,
@000
$23*#$
5)
Trench IGBT Modules
SKM 195GB126D
"00 7 5 8 *0 7
) 9 /*00 Inverse Diode
$;
- /+0 ,
$;23
$;23*#$;
$;)3
/0 7 =
Freewheeling Diode
SKM 195GAL126D
$;
- /+0 ,
Preliminary Data
$;23
$;23*#$;
$;)3
/0 7 =
Features
! " # $
Typical Applications
% &
'()
&
- /+0 ,
Module
$23)
%! / =
Characteristics
Symbol Conditions
IGBT
5
5 ! $ " %
$)
5 0 ! )
0
5 0 *+,! &
- *+ ,
5 ?1 ===A*0
25
- ,
&
&
25 * B
25 * B
2
-?
1
$5G
max.
Units
+
+!1
"!+
0!/
0!4
%
/
/!*
0!>
/!/
- *+,
@!<
"!4
B
- /*+,
<!4
>
B
/!<
*!/+
*
*!@+
/ 3C
D5
typ.
- /*+ ,
$ /+0 %! 5 /+ - *+,
=
*+! 5 0 min.
- *+ ,
- /*+,
=
GB
Units
*+ ,
$23
SEMITRANS® 2
Values
"00
$ /+0%
- /*+ ,
5 6 /+
/0!+
0!>
;
;
0!1
;
/410
+
E
*10
+0
/"
+"0
<0
F
*@!+
F
0!/"
HIJ
GAL
11-09-2006 SEN
© by SEMIKRON
SKM 195GB126D ...
Characteristics
Symbol Conditions
Inverse Diode
; $; /00 %7 5 0 ;0
min.
typ.
max.
Units
- *+ ,
=
*
*!+
- /*+ ,
=
/!1
- *+ ,
/!/
/!*
- /*+ ,
;
- *+ ,
>
/4
- /*+ ,
®
SEMITRANS 2
Trench IGBT Modules
$223
D
$; /+0 %
&I& **00 %I:
5 ?/+ 7 "00 2
-?K
&&
$; /00 %7 5 0 ;0
;
Typical Applications
% &
'()
&
1"
/<
%
:
+!1
F
0!4*
HIJ
*!+
- *+ ,
=
*
- /*+ ,
=
/!1
- *+ ,
/!/
/!*
>
/4
- /*+ ,
$223
D
$; /+0 %
&I& **00 %I:
5 ?/+ 7 "00 2
-?;K
&&
- *+ ,
Preliminary Data
! " # $
B
- /*+ ,
- /*+ ,
SKM 195GAL126D
Features
B
Freewheeling diode
; SKM 195GB126D
- /*+ ,
1"
/<
%
:
+!1
F
0!4*
HIJ
Module
L
2MAM
40
=! ?
2
?
&
3
N 3"
3
3+
*+ ,
0!<+
B
/*+ ,
/
B
0!0+
HIJ
4
+
O
*!+
+
O
/"0
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
GAL
11-09-2006 SEN
© by SEMIKRON
SKM 195GB126D ...
®
SEMITRANS 2
Trench IGBT Modules
SKM 195GB126D
SKM 195GAL126D
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
2
2
2
2
/
*
4
@
/
*
4
//+
4@
>
*
0!0@>4
0!0/<@
0!00/*
NIJ
NIJ
NIJ
NIJ
@
0!000*
2
2
2
2
/
*
4
@
/
*
4
*00
>0
*"
@
0!0+@
0!001>
0!00/
NIJ
NIJ
NIJ
NIJ
@
0!01
Zth(j-c)D
Preliminary Data
Features
! " # $
Typical Applications
% &
'()
&
GB
3
GAL
11-09-2006 SEN
© by SEMIKRON
SKM 195GB126D ...
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
11-09-2006 SEN
© by SEMIKRON
SKM 195GB126D ...
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
5
11-09-2006 SEN
© by SEMIKRON
SKM 195GB126D ...
UL Regognized
File no. E 63 532
K "/
5G
6
K"/
5%L
K "*
11-09-2006 SEN
© by SEMIKRON