SKM 300GA123D . 2 03 4* # Absolute Maximum Ratings Symbol Conditions IGBT *5 &* &*: Values .6 2 03 4* /011 .6 2 /31 4* . 2 03 4* 811 + . 2 91 4* 001 + ;11 + &*:20%&* = 01 <5 SEMITRANS® 4 IGBT Modules SKM 300GA123D Units ** 2 $11 > *5 <5 @ /011 ? 01 > .6 2 /03 4* /1 A . 2 03 4* 811 + . 2 91 4* 011 + ;11 + 0011 + 311 + ' ;1 BBB C /31 /03 4* ' ;1BBBC /03 4* Inverse Diode &( .6 2 /31 4* &(: &(:20%&( &( 2 /1 > B .6 2 /31 4* Module &: .6 . Features ! "! # $ % & ' # ( ) # *+ & " ,*- * * - .! /0 01 Typical Applications # +* / B 0311 . 2 03 4* # Characteristics Symbol Conditions IGBT <5 &*5 <5 2 *5 &* <5 21 *5 * * <5 *5 2 *5 2 /3 &* 2 011 + *5 2 03 typ. max. ;3 33 $3 .6 2 03 4* 1/ 18 .6 2 03 4* /; /$ .6 2 /03 4* /$ /9 .6 2 034* 33 D E .6 2 /034* D3 F3 E .6 2 4* B 03 8 # 2 / G /3 0 /F 0$ ( ( / /8 ( 2 9 + *51 *5 min. <5 <5 2 /3 21 * H< :< 5 ## # <5 2 '9 ' C01 .6 2 4* :< 2 ;D E :<## 2 ;D E 5## :6' 0111 ** 2 $11 &*2 011+ .6 2 /03 4* I ;11 /$1 D11 /11 00 &<-. + * /03 031 F1 0$ 331 D1 Units J J 11D3 KLM GA 1 30-05-2007 SEI © by SEMIKRON SKM 300GA123D Characteristics Symbol Conditions Inverse Diode ( 2 5* &( 2 011 +> min. <5 21 typ. max. .6 2 03 4* B 0 03 .6 2 /03 4* B /9 Units .6 2 03 4* (1 .6 2 /03 4* ( ® SEMITRANS 4 IGBT Modules .6 2 03 4* E .6 2 /03 4* &:: H 5 :6', &( 2 011 + <5 21 > ** E .6 2 03 4* 91 // + A* 2 $11 J 1/3 KLM 01 Module SKM 300GA123D Features ! "! # $ % & ' # ( ) # *+ & " ,*- * * - .! /0 01 *5 :**NC55N /3 B ' :' O $ $ ; .2 03 4* 1/9 E .2 /03 4* 100 E 1189 KLM 8 3 03 // 3 0 881 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Typical Applications # GA 2 30-05-2007 SEI © by SEMIKRON SKM 300GA123D SEMITRANS® 4 Zth Symbol Zth(j-c)l Conditions Values Units : : : : 2/ 20 28 2; 2/ 20 28 38 /93 8/ 1; 11; 11/9F 111/D OLM OLM OLM OLM 2; 1118 : : : : 2/ 20 28 2; 2/ 20 28 93 81 99 /0 11; 111;; 111D9 OLM OLM OLM OLM 2; 1113 Zth(j-c)D IGBT Modules SKM 300GA123D Features ! "! # $ % & ' # ( ) # *+ & " ,*- * * - .! /0 01 Typical Applications # GA 3 30-05-2007 SEI © by SEMIKRON SKM 300GA123D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 30-05-2007 SEI © by SEMIKRON SKM 300GA123D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 30-05-2007 SEI © by SEMIKRON SKM 300GA123D UL Recognized File 63 532 * , 3F <+ 6 * , 3F 30-05-2007 SEI © by SEMIKRON