SEMIKRON SKM145GB123D_07

SKM 145GB123D
1 2 03 4* #
Absolute Maximum Ratings
Symbol Conditions
IGBT
*5
&*
&*:
Values
16 2 03 4*
.0//
16 2 .3/ 4*
1 2 03 4*
.83
+
1 2 9/ 4*
../
+
0//
+
&*:20%&*
< 0/
;5
SEMITRANS® 2
IGBT Modules
SKM 145GB123D
SKM 145GAL123D
Features
! "! #
$ % &
'
#
( ) # *+ & "
,*- , *
-
./ 0/ Typical Applications
# +* ./
@
1 2 03 4*
.A/
+
1 2 9/ 4*
B/
+
0//
+
16 2 .3/ 4*
B//
+
1 2 03 4*
.D/
+
1 2 9/ 4*
..3
+
A//
+
.88/
+
0//
+
16
' 8/ CCCE .3/
4*
1
' 8/ CCCE .03
4*
**
2 $// =
*5
;5
? .0//
> 0/ =
16 2 .03 4*
Inverse Diode
&(
16 2 .3/ 4*
&(:
&(:20%&(
&(
2 ./ = C
Freewheeling Diode
&(
16 2 .3/ 4*
&(:
&(:20%&(
&(
2 ./ = C
16 2 .3/ 4*
Module
&:
+* . C
03//
1 2 03 4* #
Characteristics
Symbol Conditions
IGBT
;5
&*5
;5
2
*5 &*
;5
2/ 2 8 +
*5
2
*5
*5/
*5
*5
*
*
;5
2 .3
&* 2 .// +
*5
2 03
;5
;5
2 .3
2/
16 2 03 4*
H;
:;
5
##
#
;5
5##
:6'
1
max.
83
33
$3
/.
/A
+
.8
.$
.9
16 2 034*
..
.8
F
16 2 .034*
.3
.B
F
16 2 4*
C
03
A
# 2 . G
$3
.
93
.3
(
(
/3
/$
(
2 $//
&*2 .//+
16 2 .03 4*
;5 2 '.3
**
.///
*
3
I
.$/
9/
.$
8//
D/
A0/
.$/
30/
.//
.0
&;-1
Units
.$
2 '9 ' E0/
:;## 2 $9 F
typ.
16 2 .03 4*
16 2 4*
:; 2 $9 F
min.
16 2 03 4*
*
GB
Units
J
J
/.3
KLM
GAL
25-04-2007 SEI
© by SEMIKRON
SKM 145GB123D
Characteristics
Symbol Conditions
Inverse Diode
(
2
5*
&( 2 .// +=
min.
;5
2/
(/
typ.
max.
16 2 03 4*
C
0
03
16 2 .03 4*
C
.9
16 2 03 4*
..
.8
B
..
Units
16 2 .03 4*
(
16 2 03 4*
16 2 .03 4*
®
SEMITRANS 2
IGBT Modules
&::
H
5
;5
:6',
2/ =
**
F
16 2 03 4*
A3
3
+
@*
2 $//
J
/A$
KLM
Freewheeling Diode
(
SKM 145GB123D
&( 2 .// +
L 2 ./// +L@
F
2
5*
&( 2 .3/ +=
;5
2/
(/
16 2 03 4*
C
0
16 2 .03 4*
C
.9
03
16 2 03 4*
..
.8
B
..
16 2 .03 4*
SKM 145GAL123D
(
16 2 03 4*
16 2 .03 4*
Features
! "! #
$ % &
'
#
( ) # *+ & "
,*- , *
-
./ 0/ Typical Applications
# +* &::
H
5
:6'(,
&( 2 .3/ +
;5
2/ =
16 2 03 4*
**
33
9
+
@*
2 $//
J
/A
KLM
Module
*5
:**NE55N
A/
C '
:'
O $
3
12 03 4*
/D3
F
12 .03 4*
.
F
//3
KLM
A
3
03
3
.$/
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
GAL
25-04-2007 SEI
© by SEMIKRON
SKM 145GB123D
®
SEMITRANS 2
IGBT Modules
SKM 145GB123D
SKM 145GAL123D
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
:
:
:
:
2.
20
2A
28
2.
20
2A
.//
A9
./
0
//A
//09D
///.0
OLM
OLM
OLM
OLM
28
////0
:
:
:
:
2.
20
2A
28
2.
20
2A
08/
B3
00
A
//38
//..A
///.0
OLM
OLM
OLM
OLM
28
///3
Zth(j-c)D
Features
! "! #
$ % &
'
#
( ) # *+ & "
,*- , *
-
./ 0/ Typical Applications
# +* GB
3
GAL
25-04-2007 SEI
© by SEMIKRON
SKM 145GB123D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
25-04-2007 SEI
© by SEMIKRON
SKM 145GB123D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
25-04-2007 SEI
© by SEMIKRON
SKM 145GB123D
UL Recognized
File no. E 63 532
* , $.
;-
6
* , $.
;+
* , $0 P , $.
25-04-2007 SEI
© by SEMIKRON