SKM 145GB123D 1 2 03 4* # Absolute Maximum Ratings Symbol Conditions IGBT *5 &* &*: Values 16 2 03 4* .0// 16 2 .3/ 4* 1 2 03 4* .83 + 1 2 9/ 4* ../ + 0// + &*:20%&* < 0/ ;5 SEMITRANS® 2 IGBT Modules SKM 145GB123D SKM 145GAL123D Features ! "! # $ % & ' # ( ) # *+ & " ,*- , * - ./ 0/ Typical Applications # +* ./ @ 1 2 03 4* .A/ + 1 2 9/ 4* B/ + 0// + 16 2 .3/ 4* B// + 1 2 03 4* .D/ + 1 2 9/ 4* ..3 + A// + .88/ + 0// + 16 ' 8/ CCCE .3/ 4* 1 ' 8/ CCCE .03 4* ** 2 $// = *5 ;5 ? .0// > 0/ = 16 2 .03 4* Inverse Diode &( 16 2 .3/ 4* &(: &(:20%&( &( 2 ./ = C Freewheeling Diode &( 16 2 .3/ 4* &(: &(:20%&( &( 2 ./ = C 16 2 .3/ 4* Module &: +* . C 03// 1 2 03 4* # Characteristics Symbol Conditions IGBT ;5 &*5 ;5 2 *5 &* ;5 2/ 2 8 + *5 2 *5 *5/ *5 *5 * * ;5 2 .3 &* 2 .// + *5 2 03 ;5 ;5 2 .3 2/ 16 2 03 4* H; :; 5 ## # ;5 5## :6' 1 max. 83 33 $3 /. /A + .8 .$ .9 16 2 034* .. .8 F 16 2 .034* .3 .B F 16 2 4* C 03 A # 2 . G $3 . 93 .3 ( ( /3 /$ ( 2 $// &*2 .//+ 16 2 .03 4* ;5 2 '.3 ** ./// * 3 I .$/ 9/ .$ 8// D/ A0/ .$/ 30/ .// .0 &;-1 Units .$ 2 '9 ' E0/ :;## 2 $9 F typ. 16 2 .03 4* 16 2 4* :; 2 $9 F min. 16 2 03 4* * GB Units J J /.3 KLM GAL 25-04-2007 SEI © by SEMIKRON SKM 145GB123D Characteristics Symbol Conditions Inverse Diode ( 2 5* &( 2 .// += min. ;5 2/ (/ typ. max. 16 2 03 4* C 0 03 16 2 .03 4* C .9 16 2 03 4* .. .8 B .. Units 16 2 .03 4* ( 16 2 03 4* 16 2 .03 4* ® SEMITRANS 2 IGBT Modules &:: H 5 ;5 :6', 2/ = ** F 16 2 03 4* A3 3 + @* 2 $// J /A$ KLM Freewheeling Diode ( SKM 145GB123D &( 2 .// + L 2 ./// +L@ F 2 5* &( 2 .3/ += ;5 2/ (/ 16 2 03 4* C 0 16 2 .03 4* C .9 03 16 2 03 4* .. .8 B .. 16 2 .03 4* SKM 145GAL123D ( 16 2 03 4* 16 2 .03 4* Features ! "! # $ % & ' # ( ) # *+ & " ,*- , * - ./ 0/ Typical Applications # +* &:: H 5 :6'(, &( 2 .3/ + ;5 2/ = 16 2 03 4* ** 33 9 + @* 2 $// J /A KLM Module *5 :**NE55N A/ C ' :' O $ 3 12 03 4* /D3 F 12 .03 4* . F //3 KLM A 3 03 3 .$/ This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GB 2 GAL 25-04-2007 SEI © by SEMIKRON SKM 145GB123D ® SEMITRANS 2 IGBT Modules SKM 145GB123D SKM 145GAL123D Zth Symbol Zth(j-c)l Conditions Values Units : : : : 2. 20 2A 28 2. 20 2A .// A9 ./ 0 //A //09D ///.0 OLM OLM OLM OLM 28 ////0 : : : : 2. 20 2A 28 2. 20 2A 08/ B3 00 A //38 //..A ///.0 OLM OLM OLM OLM 28 ///3 Zth(j-c)D Features ! "! # $ % & ' # ( ) # *+ & " ,*- , * - ./ 0/ Typical Applications # +* GB 3 GAL 25-04-2007 SEI © by SEMIKRON SKM 145GB123D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 25-04-2007 SEI © by SEMIKRON SKM 145GB123D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 25-04-2007 SEI © by SEMIKRON SKM 145GB123D UL Recognized File no. E 63 532 * , $. ;- 6 * , $. ;+ * , $0 P , $. 25-04-2007 SEI © by SEMIKRON