SKM 40GD123D . 7 84 9* # Absolute Maximum Ratings Symbol Conditions IGBT *: .; 7 84 9* &* .; 7 04= 9* &*@ 08== >= + . 7 ?= 9* 1= + 4= + B 8= .; 7 084 9* 0= F . 7 84 9* >4 + . 7 ?= 9* 1= + 4= + 14= + 0== + ' >= GGGH 04= 9* ' >=GGGH 084 9* 84== &*@78%&* IGBT modules SKM 40GD123D SKM 40GDL123D ** 7 $== C A: D 8= C *: E 08== Inverse Diode &( .; 7 04= 9* &(@ &(@78%&( &( 7 0= C G .; 7 04= 9* Module &@ .; . Features ! " # $ % & ' # ( ) # *+ & " ,*- , * - . / 01 Typical Applications . # +* 2 #3 " 04 5!6 1 +* 0 G . 7 84 9* # Characteristics Symbol Conditions IGBT min. typ. max. Units >4 44 $4 .; 7 84 9* =1 =/ + .; 7 84 9* 0> 0$ .; 7 084 9* 0$ 0? .; 7 849* >> 4$ I .; 7 0849* $= J$ I .; 7 9* G 84 1 # 7 0 !6 0$ =84 80 =1 ( ( * =00 =04 ( : ## # J= 44 1? >== >= K 81 K A: A: 7 *: &* 7 0 + &*: A: 7 = *: 7 *: *:= *: *: * * A: 7 04 &* 7 84 + A: 7 04 *: 7 84 A: 7 = @A 7 >= I @A## 7 >= I :## @;' GD Units . 7 84 9* A: SEMITRANS® 6 Values &A-. ** 7 $== &*7 84+ .; 7 084 9* A: 7 '04 =4$ LMN GDL 13-01-2009 NOS © by SEMIKRON SKM 40GD123D Characteristics Symbol Conditions Inverse Diode ( 7 :* &( 7 84 +C A: 7 = (= min. typ. max. Units .; 7 84 9* G 8 84 .; 7 084 9* G 0? .; 7 84 9* 00 08 .; 7 084 9* ( ® SEMITRANS 6 IGBT modules .; 7 84 9* 1$ 48 .; 7 084 9* &@@ O &( 7 84 + M 7 4== +MF : A: 7 = C ** 7 $== @;', I I .; 7 084 9* 84 >4 + F* 014 K 0 LMN Freewheeling Diode SKM 40GD123D SKM 40GDL123D ( 7 :* &( 7 +C A: 7 (= ( Features ! " # $ % & ' # ( ) # *+ & " ,*- , * - . / 01 Typical Applications . # +* .; 7 84 9* .; 7 084 9* .; 7 84 9* .; 7 084 9* &@@ O &( 7 + .; 7 9* + F* : A: 7 = C ** 7 $== K LMN Module *: @' 5 4 > $= ! ==4 LMN 4 0J4 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 2 #3 " 04 5!6 GD 2 .; 7 9* G GDL 13-01-2009 NOS © by SEMIKRON SKM 40GD123D SEMITRANS® 6 Zth Symbol Zth(j-c)l Conditions Values Units @ @ @ @ 70 78 71 7> 70 78 71 8$= 84= 1? 08 ==>>J ===J/ ===04 5MN 5MN 5MN 5MN 7> ====8 @ @ @ @ 70 78 71 7> 70 78 71 4?= 11= J1 0J ==4> ===?/ ===0? 5MN 5MN 5MN 5MN 7> ====8 Zth(j-c)D IGBT modules SKM 40GD123D SKM 40GDL123D Features ! " # $ % & ' # ( ) # *+ & " ,*- , * - . / 01 Typical Applications . # +* 2 #3 " 04 5!6 GD 3 GDL 13-01-2009 NOS © by SEMIKRON SKM 40GD123D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 13-01-2009 NOS © by SEMIKRON SKM 40GD123D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 13-01-2009 NOS © by SEMIKRON SKM 40GD123D UL Recognized File 63 532 * , $J * , $J 6 A, * , J1 13-01-2009 NOS A, © by SEMIKRON