SKM 75GD123D - 2 34 5* ' Absolute Maximum Ratings Symbol Conditions IGBT *6 -7 2 34 5* %* -7 2 /49 5* %*< /399 :4 1 - 2 ;9 5* 49 1 /99 1 > 39 -7 2 /34 5* /9 B - 2 34 5* :4 1 - 2 ;9 5* 49 1 /99 1 449 1 /99 1 & D9 CCCE /49 5* & D9 CCCE /34 5* 3499 %*<23$%* IGBT Modules SKM 75GD123DL ** 2 #99 ? =6 @ 39 ? *6 A /399 Inverse Diode %( -7 2 /49 5* %(< %(<23$%( %( 2 /9 ? C SKM 75GD123D Module SKM 75GDL123D %< -7 2 /49 5* -7 - Features ! " # $ % & ' ( ) ' * % " +*, + , - . /0 Typical Applications +* " - ' 1* ' - 2 34 5* ' Characteristics Symbol Conditions IGBT =6 =6 2 *6 %* 2 3 1 %*6 =6 2 9 *6 2 *6 *69 *6 *6 * * =6 2 /4 %* 2 49 1 =6 2 /4 *6 2 34 =6 2 9 min. typ. max. Units D4 44 #4 -7 2 34 5* 9D /3 1 -7 2 34 5* /D /# -7 2 /34 5* /# /; -7 2 345* 33 3; F -7 2 /345* 09 0; F -7 2 5* C 34 0 ' 2 / !G 00 94 D0 9# ( ( * 933 90 ( 6 '' ' DD 4# ; 0;9 :9 /99 /99 H <7& 1 1* / C <= 2 33 F <='' 2 33 F 6'' GD Units - 2 34 5* =6 SEMITRANS® 6 Values ** 2 #99 %*2 491 -7 2 /34 5* =6 2 > /4 499 /99 4 %=,- H 903 IJK GDL 13-01-2009 NOS © by SEMIKRON SKM 75GD123D Characteristics Symbol Conditions Inverse Diode ( 2 6* %( 2 49 1? =6 2 9 (9 min. typ. max. Units -7 2 34 5* C 3 34 -7 2 /34 5* C /; -7 2 34 5* // /3 -7 2 /34 5* ( ® SEMITRANS 6 IGBT Modules -7 2 34 5* /; 3# -7 2 /34 5* %<< L %( 2 49 1 J 2 ;99 1JB 6 =6 2 9 ? ** 2 #99 <7&+ F F -7 2 /34 5* 04 : 1 B* 33 H 9# IJK #9 ! 994 IJK Module SKM 75GD123DL SKM 75GD123D SKM 75GDL123D *6 <& M 4 Features ! " # $ % & ' ( ) ' * % " +*, + , - . /0 D 4 /:4 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Typical Applications +* " - ' 1* ' GD 2 GDL 13-01-2009 NOS © by SEMIKRON SKM 75GD123D Zth Symbol Zth(j-c)l Conditions Values Units < < < < 2/ 23 20 2D 2/ 23 20 3D9 #; .3 3; 99# 9933; 999/0 MJK MJK MJK MJK 2D 99993 SKM 75GD123D < < < < 2/ 23 20 2D 2/ 23 20 D99 /#; 3; D 99;0/ 99//3 999/0 MJK MJK MJK MJK SKM 75GDL123D 2D 99; SEMITRANS® 6 Zth(j-c)D IGBT Modules SKM 75GD123DL Features ! " # $ % & ' ( ) ' * % " +*, + , - . /0 Typical Applications +* " - ' 1* ' GD 3 GDL 13-01-2009 NOS © by SEMIKRON SKM 75GD123D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 13-01-2009 NOS © by SEMIKRON SKM 75GD123D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 13-01-2009 NOS © by SEMIKRON SKM 75GD123D UL Recognized File 63 532 * + 4# * + #: 6 =+ * + :0 13-01-2009 NOS =+ © by SEMIKRON