SKM 200GB063D
7 4* 8) %
!
Absolute Maximum Ratings
Symbol Conditions
IGBT
()'
9 7 4* 8)
)
9 7 3*+ 8)
)=>
Superfast NPT-IGBT
Modules
SKM 200GB063D
;++
(
4;+
1
7 <+ 8)
4++
1
@++
1
A 4+
(
3+
E
7 4* 8)
4++
1
7 F+ 8)
3-*
1
@++
1
3@++
1
*++
1
@+ &&& G 3*+
8)
@+ &&& G 34*
8)
4*++
(
)=>74?)
()) 7 -++ (B (' C 4+ (B
()' D ;++ (
Units
7 4* 8)
('
SEMITRANS® 3
Values
9 7 34* 8)
Inverse Diode
.
9 7 3*+ 8)
.=>
.=>74?.
.>
7 3+ B &
9 7 3*+ 8)
Module
=>
09
Features
!
!
" #$ %
% & ! '
& &
%%& % ()'
*+ , %% -+ , (
$ )
)
)
%
. / % 0
)1 !!
! #
2) 2
)
!
$ ! !
3- !
!
4+ Typical Applications
! !
1) 0
0 !0
5 #
6
! 0
(
1) 3 &
7 4* 8) %
!
Characteristics
Symbol Conditions
IGBT
('
(' 7 ()' ) 7 @ 1
)'
(' 7 + ( ()' 7 ()'
()'+
)'
()'
)
)
(' 7 3* (
min.
typ.
max.
Units
@*
**
;*
(
9 7 4* 8)
+3
+-
1
9 7 4* 8)
3+*
(
9 7 34* 8)
3
(
9 7 4*8)
*-
H
9 7 34*8)
<
) 7 4++ 1 (' 7 3* ( 9 7 4*8)
0&
()' 7 4* (' 7 + (
4*
(
9 7 34*8)
0&
4@
4F
(
% 7 3 >"I
334
34*
.
.
+<*
.
@F+
)
)
J
(' 7 +( G3*(
=
9 7 8)
!
'
!%%
%
= 7 F H
=%% 7 F H
'%%
=9
H
43
()) 7 -++(
)7 4++1
9 7 34* 8)
(' 7 A3*(
+
K
3@+
<+
33
@@4
@*
L
<*
L
+3@
MN6
GB
1
03-12-2008 SEI
© by SEMIKRON
SKM 200GB063D
Characteristics
Symbol Conditions
Inverse Diode
(. 7 (')
SEMITRANS® 3
Superfast NPT-IGBT
Modules
. 7 4++ 1B (' 7 + (
min.
typ.
max.
Units
9 7 4* 8)
0&
3**
3O
(
9 7 34* 8)
0&
3**
(.+
9 7 34* 8)
.
9 7 34* 8)
@
9 7 34* 8)
<*
34<
==>
J
. 7 4++ 1
'
(' 7 3* (B ()) 7 ;++ (
=92
!!
(
+O
(
**
H
1
E)
L
+-
MN6
Module
)'
=))PG''P
3*
& SKM 200GB063D
=
!
>
Q >;
>
>;
4+
"
7 4* 8)
+-*
H
7 34* 8)
+*
H
++-F
MN6
-
*
4*
*
-4*
Features
!
!
" #$ %
% & ! '
& &
%%& % ()'
*+ , %% -+ , (
$ )
)
)
%
. / % 0
)1 !!
! #
2) 2
)
!
$ ! !
3- !
!
4+ This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Typical Applications
! !
1) 0
0 !0
5 #
6
! 0
GB
2
03-12-2008 SEI
© by SEMIKRON
SKM 200GB063D
SEMITRANS® 3
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
=
=
=
=
73
74
77@
73
74
7-
O+
-O
O
4
++@3;
++3-O
+++43
QN6
QN6
QN6
QN6
7@
++++3
=
=
=
=
73
74
77@
73
74
7-
4++
F@
3@
4
++4<*
++@3+++3O
QN6
QN6
QN6
QN6
7@
+++@
Zth(j-c)D
Superfast NPT-IGBT
Modules
SKM 200GB063D
Features
!
!
" #$ %
% & ! '
& &
%%& % ()'
*+ , %% -+ , (
$ )
)
)
%
. / % 0
)1 !!
! #
2) 2
)
!
$ ! !
3- !
!
4+ Typical Applications
! !
1) 0
0 !0
5 #
6
! 0
GB
3
03-12-2008 SEI
© by SEMIKRON
SKM 200GB063D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
03-12-2008 SEI
© by SEMIKRON
SKM 200GB063D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT and Diode
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
5
03-12-2008 SEI
© by SEMIKRON
SKM 200GB063D
UL recognized
File no. E 63 532
)
2 *;
6
)
2 *;
03-12-2008 SEI
© by SEMIKRON