SKM 100GB176D
Absolute Maximum Ratings
Symbol Conditions
IGBT
0 .( /
%
0 2(+ /
%56
.(/" '
2)++
2.(
&
3+ /
4+
&
2(+
&
8 .+
2+
<
.( /
2++
&
3+ /
)+
&
2(+
&
).+
&
.++
&
* >+ --- ?2(+
/
* >+ --- ?2.(
/
>+++
7
SEMITRANS® 2
Trench IGBT Modules
SKM 100GB176D
2.++ 9 7 : .+ 9 0 2.( /
; 2)++ Inverse Diode
%=
0 2(+ /
%=56
%=56.$%=
%=6
2+ 9 -
0 2(+ /
Module
%56
0
Features
!" # $ %
Typical Applications
& ' ()( *
)(+ &
,! $ -
Units
.( /
%56.$%
Values
&" 2 -
Characteristics
Symbol Conditions
IGBT
7
7 " % @ &
%
7 + " +
7 2( %
)( &" 7 2( .(" 7 + .(/" '
min.
typ.
max.
Units
(".
("3
#">
0 .( /
+"2
+"@
&
0 .( /
2
2".
0 2.( /
+"4
2"2
0 .(/
2@
2#")
A
0 2.(/
.+
.>
A
0 .(/-
.
.">(
0 2.(/-
.">
."4
2 6B
(")
+".3
=
=
+"..
=
#.+
C7
7*3D?2(
57
0 .( /
3"(
E
57
>". A
'D' 2#3+ &D<
57 >". A
'D' >4+ &D<
2.++
% )(&
0 2.( /
7*2(
.3+
>+
>>
#3+
2>+
F
G .+ .3"(
F
'
' 50*
%7H
+".>
IDJ
GB
1
06-10-2009 NOS
© by SEMIKRON
SKM 100GB176D
Characteristics
Symbol Conditions
Inverse Diode
= %=
)( &9 7 + =+
=
®
SEMITRANS 2
Trench IGBT Modules
%556
C
%= )( &
'D' 2#(+ &D<
7 *2( 9 2.++ 50*K
''
min.
typ.
max.
Units
0 .( /-
2"#
2"4
0 2.( /-
2"#
2"4
0 .( /
2"2
2"@
0 2.( /
+"4
2"2
0 .( /
#")
3
A
0 2.( /
4"@
22
A
0 2.( /
G .+ )3"(
.4"#
&
<
.2">
F
IDJ
@+
Module
G
SKM 100GB176D
+">(
5L?L
-" *
.( /
+")(
A
2.( /
2
A
5*
'
6
M 6#
@
6
6(
."(
+"+(
IDJ
(
N
(
N
2#+
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
!" # $ %
Typical Applications
& ' ()( *
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
)(+ &
,! $ -
GB
2
06-10-2009 NOS
© by SEMIKRON
SKM 100GB176D
®
SEMITRANS 2
Trench IGBT Modules
SKM 100GB176D
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
5
5
5
5
2
.
@
>
2
.
@
2#+
#+
2#"(
@"(
+"2+(#
+"++4
+"++22
MDJ
MDJ
MDJ
MDJ
>
+"+++(
5
5
5
5
2
.
@
>
2
.
@
.)+
2@4
@)
>
+"+>)(
+"+2+>
+"++22
MDJ
MDJ
MDJ
MDJ
>
+"+++@
Zth(j-c)D
Features
!" # $ %
Typical Applications
& ' ()( *
)(+ &
,! $ -
GB
3
06-10-2009 NOS
© by SEMIKRON
SKM 100GB176D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
06-10-2009 NOS
© by SEMIKRON
SKM 100GB176D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
5
06-10-2009 NOS
© by SEMIKRON
SKM 100GB176D
UL Recognized
File no. E 63 532
K #2
7H
6
K #2
06-10-2009 NOS
© by SEMIKRON