2N1711 ® EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) 75 V V CER Collector-Emitter Voltage (R BE ≤ 10Ω) Emitter-Base Voltage (I C = 0) 50 V V EBO IC P tot T stg Tj 7 V Collector Current 500 mA Total Dissipation at T amb ≤ 25 o C o at T C ≤ 25 C o at T C ≤ 100 C Storage Temperature 0.8 3 1.7 W W W Max. Operating Junction Temperature September 2002 -65 to 175 o C 175 o C 1/4 2N1711 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 50 187.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit 10 10 nA µA 5 nA I CBO Collector Cut-off Current (I E = 0) V CB = 60 V V CB = 60 V I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V Collector-Base Breakdown Voltage (I E = 0) I C = 100 µA 75 V V (BR)CER ∗ Collector-Emitter Breakdown Voltage (R BE ≤ 10Ω) I C = 10 mA 50 V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = 100 µA 7 V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 150 mA I B = 15 mA 0.5 1.5 V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 150 mA I B = 15 mA 0.95 1.3 V DC Current Gain I C = 10 µA I C = 0.1 mA I C = 10 mA I C = 150 mA I C = 500 mA I C = 10 mA T C = -55 o C V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V (BR)CBO h FE ∗ 20 35 75 100 40 60 80 130 130 75 35 65 70 135 70 100 300 h fe Small Signal Current Gain I C = 1 mA fT Transition Frequency I C = 50 mA V CE = 10 V f = 20 MHz C EBO Emitter-Base Capacitance IC = 0 V EB = 0.5 V f = 1 MHz 50 80 pF C CBO Collector-Base Capacitance IE = 0 V CB = 10 V 18 25 pF NF Noise Figure I C = 0.3 mA R g = 510 Ω 3.5 8 dB h ie Input Impedance I C = 1 mA V CE = 5 V f = 1 KHz 4.4 h re Reverse Voltage Ratio I C = 1 mA V CE = 5 V f = 1 KHz 7.3 x 10 -4 h oe Output Admittance I C = 1 mA V CE = 5 V f = 1 KHz 23.8 ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 2/4 T C = 150 o C V CE = 10 V f = 1 KHz f = 1 MHz V CE = 10 V f = 1 KHz 300 MHz KΩ µS 2N1711 TO-39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D G A I E F H B L P008B 3/4 2N1711 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4