STMICROELECTRONICS 2N1711

2N1711
®
EPITAXIAL PLANAR NPN
DESCRIPTION
The 2N1711 is a silicon Planar Epitaxial NPN
transistor in Jedec TO-39 metal case. It is
intented for use in high performance amplifier,
oscillator and switching circuits.
The 2N1711 is also used to advantage in
amplifiers where low noise is an important factor.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CBO
Collector-Base Voltage (I E = 0)
75
V
V CER
Collector-Emitter Voltage (R BE ≤ 10Ω)
Emitter-Base Voltage (I C = 0)
50
V
V EBO
IC
P tot
T stg
Tj
7
V
Collector Current
500
mA
Total Dissipation at T amb ≤ 25 o C
o
at T C ≤ 25 C
o
at T C ≤ 100 C
Storage Temperature
0.8
3
1.7
W
W
W
Max. Operating Junction Temperature
September 2002
-65 to 175
o
C
175
o
C
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2N1711
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
50
187.5
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
10
10
nA
µA
5
nA
I CBO
Collector Cut-off
Current (I E = 0)
V CB = 60 V
V CB = 60 V
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
Collector-Base
Breakdown Voltage
(I E = 0)
I C = 100 µA
75
V
V (BR)CER ∗ Collector-Emitter
Breakdown Voltage
(R BE ≤ 10Ω)
I C = 10 mA
50
V
V (BR)EBO
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = 100 µA
7
V
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
I C = 150 mA
I B = 15 mA
0.5
1.5
V
V BE(sat) ∗
Base-Emitter
Saturation Voltage
I C = 150 mA
I B = 15 mA
0.95
1.3
V
DC Current Gain
I C = 10 µA
I C = 0.1 mA
I C = 10 mA
I C = 150 mA
I C = 500 mA
I C = 10 mA
T C = -55 o C
V CE = 10 V
V CE = 10 V
V CE = 10 V
V CE = 10 V
V CE = 10 V
V CE = 10 V
V (BR)CBO
h FE ∗
20
35
75
100
40
60
80
130
130
75
35
65
70
135
70
100
300
h fe
Small Signal Current
Gain
I C = 1 mA
fT
Transition Frequency
I C = 50 mA V CE = 10 V f = 20 MHz
C EBO
Emitter-Base
Capacitance
IC = 0
V EB = 0.5 V f = 1 MHz
50
80
pF
C CBO
Collector-Base
Capacitance
IE = 0
V CB = 10 V
18
25
pF
NF
Noise Figure
I C = 0.3 mA
R g = 510 Ω
3.5
8
dB
h ie
Input Impedance
I C = 1 mA
V CE = 5 V
f = 1 KHz
4.4
h re
Reverse Voltage Ratio
I C = 1 mA
V CE = 5 V
f = 1 KHz
7.3 x
10 -4
h oe
Output Admittance
I C = 1 mA
V CE = 5 V
f = 1 KHz
23.8
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
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T C = 150 o C
V CE = 10 V f = 1 KHz
f = 1 MHz
V CE = 10 V
f = 1 KHz
300
MHz
KΩ
µS
2N1711
TO-39 MECHANICAL DATA
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
12.7
TYP.
MAX.
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
0.370
G
5.08
0.200
H
1.2
0.047
I
0.9
0.035
45o (typ.)
L
D
G
A
I
E
F
H
B
L
P008B
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2N1711
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
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