Data Sheet No. 2N4029 Generic Part Number: 2N4029 Type 2N4029 Geometry 6700 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/512 Features: • • • • General-purpose transistor for high speed switching and driver applicatons. Housed in a TO-18 case. Also available in chip form using the 6700 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/512 which Semicoa meets in all cases. TO-18 Maximum Ratings o TC = 25 C unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 80 V Collector-Base Voltage VCBO 80 V Emitter-Base Voltage VEBO 5.0 V IC 1.0 mA Power Dissipation at 25 C ambient o Derate above 25 C PT 0.5 2.86 Watt o mW/ C Operating Junction Temperature TJ -55 to +200 o TSTG -55 to +200 o Collector Current, Continuous o Storage Temperature C C Data Sheet No. 2N4029 Electrical Characteristics o TC = 25 C unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 10 µA, pulsed Collector-Emitter Breakdown Voltage IC = 10 mA, pulsed Emitter-Base Breakdown Voltage IC = 10 µA, pulsed Collector-Base Cutoff Current VCB = 60 V o VCB = 60 V, TA = +150 C Collector-Emitter Cutoff Current VCE = 60 V, VBE = 2.0 V Base-Emitter Cutoff Current VBE = 3 V ON Characteristics Forward current Transfer Ratio IC = 100 µA, VCE = 5 V IC = 100 mA, VCE = 5.0 V (pulse test) IC = 500 mA, VCE = 5 V (pulse test) IC = 1.0 A, VCE = 5 V (pulse test) IC = 500 mA, VCE = 5.0 V (pulse test), TA = -55oC Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA (pulse test) IC = 500 mA, IB = 50 mA (pulse test) IC = 1.0 A, IB = 100 mA (pulse test) Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA (pulse test) IC = 500 mA, IB = 50 mA (pulse test) Small Signal Characteristics Magnitude of Common Emitter Small Signal Short Circuit Forward Current Transfer Ratio VCE = 10 V, IC = 50 mA, f = 100 MHz Open Circuit Output Capacitance VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz Input Capacitance, Output Open Circuited VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz Switching Characteristics Delay Time IC = 500 mA, IB1 = 50 mA Rise Time IC = 500 mA, IB1 = 50 mA Storage Time IC = 500 mA, IB1 = IB2 = 50 mA Fall Time IC = 500 mA, IB1 = IB2 = 50 mA Symbol Min Max Unit V(BR)CBO 80 --- V V(BR)CEO 80 --- V V(BR)EBO 5.0 --- V ICBO1 --- 10 nA ICBO2 --- 25 µA ICEX1 --- 25 nA IEBO --- 25 nA Symbol Min Max Unit hFE1 hFE2 hFE3 hFE4 50 100 70 25 --300 ----- --------- hFE5 30 --- --- VCE(sat)1 VCE(sat)2 VCE(sat)3 ------- 0.15 0.5 1.0 V dc V dc V dc VBE(sat)1 VBE(sat)2 ----- 0.9 1.2 V dc V dc Symbol Min Max Unit |hfe| 1.5 6.0 --- COBO --- 20 pF CIBO --- 80 pF Symbol Min Max Unit td --- 15 ns tr --- 25 ns ts --- 175 ns tf --- 35 ns