SEME 2N2905A LAB MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 5.08 (0.200) typ. 2.54 (0.100) 2 1 • HIGH SPEED SATURATED SWITCHING 3 • ALSO AVAILABLE IN CERAMIC SURFACE MOUNT PACKAGE 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO39 METAL PACKAGE (TO-205AD) Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ , TSTG Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range – 60V – 60V – 5V – 600mA 600mW 3.43mW / °C 3W 17.2mW / °C –65 to +200°C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case 292°C/W 58°C/w Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3063 Issue 1 SEME 2N2905A LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)CEO OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage IC = –10mA IB = 0 –60 V V(BR)CBO Collector – Base Breakdown Voltage IC = –10µA IE = 0 –60 V V(BR)EBO Emitter – Base Breakdown Voltage IE = –10µA IC = 0 –5 V ICEX Collector Cut-off Current VCE = –30V VBE = –0.5V –1 µA ICBO Collector Cut-off Current IE = 0 VCB = –50V –0.01 TA = 150°C –10 µA IB Base Current VCE = –30V VBE = –0.5V –50 IC = –150mA IB = –15mA –0.4 IC = –500mA IB = –50mA –1.6 IC = –150mA IB = –15mA –1.3 IC = –500mA IC = –50mA –2.6 IC = –0.1mA VCE = –10V 75 IC = –1mA VCE = –10V 100 IC = –10mA VCE = –10V 100 IC = –150mA VCE = –10V 1 100 IC = –500mA VCE = –10V 50 IC = –50mA VCE = –20V 1 nA ON CHARACTERISTICS VCE(sat)1 Collector – Emitter Saturation Voltage VBE(sat) Base – Emitter Saturation Voltage hFE DC Current Gain 1 V V — 300 SMALL SIGNAL CHARACTERISTICS MHz fT Transition Frequency 2 CCB Output Capacitance CEB Input Capacitance ton SWITCHING CHARACTERISTICS Turn–On Time VCC = –30V 26 45 td Delay Time IC = –150mA 6 10 tr Rise Time IB1 = –15mA 20 40 toff Turn–Off Time VCC = –6V 70 300 ts Storage Time IC = –150mA 50 80 tf Fall Time IB1 = IB2 = –15mA 20 30 f = 100MHz 200 VCB = –10V IE = 0 f = 1.0MHz VBE = –2V IC = 0 f = 1.0MHz 8 pF 30 pF ns ns NOTES: 1) Pulse test: tp ≤ 300µs , δ ≤ 2% 2) fT is defined as the frequency at which hFE extrapolates to unity. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3063 Issue 1