BUL1102E ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS FOUR LAMP ELECTRONIC BALLAST FOR: 120 V MAINS IN PUSH-PULL CONFIGURATION; 277 V MAINS IN HALF BRIDGE CURRENT FEED CONFIGURATION. ■ DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during Breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CES Collector-Emitter Voltage (V BE = 0) 1100 V V CEO Collector-Emitter Voltage (I B = 0) 450 V V EBO Emitter-Base Voltage (I C = 0) IC I CM Parameter 12 V Collector Current 4 A Collector Peak Current (t p <5 ms) 8 A A Base Current 2 I BM Base Peak Current (t p <5 ms) 4 A P tot Total Dissipation at T c = 25 o C 70 W T stg Storage Temperature IB Tj March 2003 Max. Operating Junction Temperature -65 to 150 o C 150 o C 1/6 BUL1102E THERMAL DATA R thj-case Thermal Resistance Junction-Case Max o 1.78 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CES Collector Cut-off Current (V BE = 0) V CE = 1100 V I EBO Emitter Cut-off Current (I B = 0) V EB = 12 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = 100 mA Collector-Emitter Saturation Voltage IC = 2 A V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 2 A I B = 400 mA DC Current Gain I C = 250 mA IC = 2 A V CE = 5 V V CE = 5 V ts tf RESISTIVE LOAD Storage Time Fall Time I C = 2.5 A I B1 = 0.5 A T P = 30 µs V CC = 250 V I B2 = 1 A (see figure 2) E ar Avalanche Energy L = 2 mH I BR ≤ 2.5A (see figure 1) I B = 400 mA C = 1.8 nF 25 o C < T C <125 o C ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Areas 2/6 Typ. Max. Unit 100 µA 1 mA 450 V CE(sat) ∗ h FE ∗ Min. Derating Curve 35 12 V 1.5 V 1.5 V 70 20 2.5 300 6 µs ns mJ BUL1102E DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Switching Time Resistive Load Switching Time Inductive Load 3/6 BUL1102E Reverse Biased SOA Figure 1: Energy Rating Test Circuit Figure 2: Resistive Load Switching Test Circuit 4/6 BUL1102E TO-220 MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10.00 10.40 0.394 L2 L4 16.40 13.00 0.409 0.645 14.00 0.511 0.551 0.116 L5 2.65 2.95 0.104 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 3.85 0.147 M DIA. 2.60 3.75 0.102 0.151 P011CI 5/6 BUL1102E Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6