FDZ4670 tm ® N-Channel PowerTrench MOSFET BGA 30V, 25A, 2.5mΩ Features General Description Max rDS(on) = 2.5mΩ at VGS = 10V, ID = 25A Combining Farichild’s 30V PowerTrench process with state-ofthe-art BGA packaging, the FDZ4670 minimize both PCB space and rDS(on) . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handing capacity, ultra-low profile packaging, low gate charge and low rDS(on). Max rDS(on) = 4.5mΩ at VGS = 4.5V, ID = 18.5A Ultra-thin package: less than 0.85mm height when mounted to PCB Outstanding thermal transfer characteristics Ultra-low gate charge x rDS(on) product This MOSFET feature faster switching and lower gate charge than other MOSFETs with comparable rDS(on) specifications resulting in DC/DC power supply designs and POL converters with higher overall efficiency. RoHS Compliant Applications DC - DC Conversion POL converters Index slot D G Bottom S Top FLFBGA 3.5X4.0 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous (Note 1a) -Pulsed PD TJ, TSTG Ratings 30 Units V ±20 V 25 60 Power Dissipation (Note 1a) 2.5 Power Dissipation (Note 1b) 1.25 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 100 RθJC Thermal Resistance, Junction to Case °C/W 0.85 Package Marking and Ordering Information Device Marking 4670 Device FDZ4670 ©2007 Fairchild Semiconductor Corporation FDZ4670 RevD Package FLFBGA 3.5X4.0 1 Reel Size 13’’ Tape Width 12mm Quantity 3000 units www.fairchildsemi.com FDZ4670 N-Channel PowerTrench®MOSFET BGA May 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 30 V ID = 250μA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V 1 μA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 3 V mV/°C -30 On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250μA, referenced to 25°C 4.4 VGS = 10V, ID = 25A 1.9 2.5 rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 18.5A 3.0 4.5 VGS = 10V, ID = 25A, TJ = 125°C 2.6 3.8 VDD= 10V, ID = 25A 114 gFS Forward Transconductance 1 1.7 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 2660 3540 pF 1440 1920 pF 180 270 pF Ω 1.0 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 15V, ID = 1.0A, VGS = 10V, RGEN = 6Ω VGS = 10V, VDD = 15V, ID = 25A 15 27 ns 11 20 ns 50 80 ns 67 107 ns 40 56 nC 7 nC 6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 1.8A (Note 2) IF = 25A, di/dt = 100A/μs 0.7 1.2 V 46 69 ns 28 42 nC NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJCis determined by the user's board design. a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper. b. 100°C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. ©2007 Fairchild Semiconductor Corporation FDZ4670 Rev.D 2 www.fairchildsemi.com FDZ4670 N-Channel PowerTrench®MOSFET BGA Electrical Characteristics TJ = 25°C unless otherwise noted 60 4.5 50 VGS = 6V VGS = 4.5V 40 VGS = 3.5V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10V VGS = 3V 30 20 10 PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX 0 0.0 0.2 0.4 0.6 0.8 PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX VGS = 3V 4.0 3.5 3.0 VGS = 3.5V 2.5 2.0 VGS = 4.5V 1.0 VGS = 10V 0.5 1.0 0 10 20 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.2 1.1 1.0 0.9 0.8 0 25 50 75 100 125 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.3 9 ID = 25A 60 PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX 8 7 6 5 4 TJ = 125oC 3 2 TJ = 25oC 1 150 2 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 60 IS, REVERSE DRAIN CURRENT (A) 60 PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX 50 ID, DRAIN CURRENT (A) 50 10 ID = 25A VGS = 10V -25 40 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.5 0.7 -50 30 ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics 1.4 VGS = 6V 1.5 VDS = 5V 40 TJ = 125oC 30 20 TJ = 25oC 10 TJ = -55oC 0 1.0 1.5 2.0 2.5 3.0 3.5 VGS = 0V 10 TJ = 125oC 1 TJ = 25oC 0.1 TJ = -55oC 0.01 0.001 0.0 4.0 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2007 Fairchild Semiconductor Corporation FDZ4670 Rev.D 3 1.2 www.fairchildsemi.com FDZ4670 N-Channel PowerTrench®MOSFET BGA Typical Characteristics TJ = 25°C unless otherwise noted 8000 ID = 25A Ciss VDD = 10V 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 15V 6 4 VDD = 20V Coss 1000 Crss 2 f = 1MHz VGS = 0V 100 0.1 0 0 5 10 15 20 25 30 35 40 45 1 Figure 7. Gate Charge Characteristics P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 1ms 10 10ms THIS AREA IS LIMITED BY rDS(on) 100ms SINGLE PULSE TJ = MAX RATED 1s 0.1 10s o RθJA = 100 C/W DC TA = 25oC 0.01 0.01 0.1 1 30 Figure 8. Capacitance vs Drain to Source Voltage 100 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) 10 100 2000 1000 VGS = 10V SINGLE PULSE RθJA = 100oC/W TA = 25oC 100 10 1 -3 10 -2 -1 10 10 0 1 10 2 10 10 3 10 t, PULSE WIDTH (s) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 100 C/W 0.01 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 11. Transient Thermal Response Curve ©2007 Fairchild Semiconductor Corporation FDZ4670 Rev.D 4 www.fairchildsemi.com FDZ4670 N-Channel PowerTrench®MOSFET BGA Typical Characteristics TJ = 25°C unless otherwise noted FDZ4670 N-Channel PowerTrench®MOSFET BGA Dimensional Outline and Pad Layout ©2007 Fairchild Semiconductor Corporation FDZ4670 Rev.D 5 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Across the board. Around the world™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ DOME™ E2CMOS™ EcoSPARK® EnSigna™ FACT Quiet Series™ FACT® FAST® FASTr™ FPS™ FRFET® GlobalOptoisolator™ GTO™ HiSeC™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ MICROCOUPLER™ MicroPak™ MICROWIRE™ Motion-SPM™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR® PACMAN™ PDP-SPM™ POP™ Power220® Power247® PowerEdge™ PowerSaver™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ ScalarPump™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ The Power Franchise® ™ TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyWire™ TruTranslation™ µSerDes™ UHC® UniFET™ VCX™ Wire™ tm DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I27 ©2007 Fairchild Semiconductor Corporation FDZ4670 Rev.D www.fairchildsemi.com FDZ4670 N-Channel PowerTrench®MOSFET BGA tm