STD35NF06 N-channel 60V - 0.018Ω - 35A - DPAK STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STD35NF06 60V <0.020Ω 35A ■ Exceptional dv/dt capability ■ Application oriented characterization ■ 100% avalanche tested 3 1 DPAK Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STD35NF06T4 D35NF06 DPAK Tape & reel February 2007 Rev 4 1/13 www.st.com 13 Contents STD35NF06 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ................................................ 8 STD35NF06 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VDGR VGS Parameter Value Unit Drain-source voltage (VGS = 0) 60 V Drain-gate voltage (RGS = 20 kΩ) 60 V ± 20 V Gate- source voltage ID Drain current (continuous) at TC = 25°C 35 A ID Drain current (continuous) at TC = 100°C 24.5 A Drain current (pulsed) 140 A Total dissipation at TC = 25°C 80 W 0.53 W/°C 5 V/ns -55 to 175 °C IDM (1) Ptot Derating Factor dv/dt(2) Tstg Tj Peak diode recovery avalanche energy Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD ≤35A, di/dt ≤100A/µs, VDD =V(BR)DSS, Tj ≤TJMAX Table 2. Thermal data Rthj-case Thermal resistance junction-case max 1.88 °C/W Rthj-amb Thermal resistance junction-to ambient max 100 °C/W Maximum lead temperature for soldering purpose 275 °C TJ Table 3. Symbol Avalanche characteristics Parameter Max value Unit IAR Avalanche Current, Repetitive Or Notrepetitive (pulse width limited by Tj max) 17.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 130 mJ 3/13 Electrical characteristics 2 STD35NF06 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS =0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC = 125°C IGSS Gate-body leakage current (VDS = 0) VGS = ± 20V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 17.5A Table 5. Symbol Test conditions Typ. Max. 60 2 Unit V 1 10 µA µA ±100 nA 3 4 V 0.018 0.020 Ω Typ. Max. Unit Dynamic Parameter Test conditions Min. gfs (1) Forward transconductance VDS > ID(on) x RDS(on)max, ID = 17.5A 13 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS = 0 1300 300 105 pF pF pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 30V, ID = 27.5A RG = 4.7Ω VGS = 10V (see Figure 12) 20 50 36 15 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 48V, ID = 55A, VGS = 10V, RG = 4.7Ω (see Figure 13) 44.5 10.5 17.5 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 4/13 Min. 60 nC nC nC STD35NF06 Electrical characteristics Table 6. Symbol Source drain diode Parameter ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD trr Qrr IRRM Test conditions Min. Typ. ISD = 35A, VGS = 0 Reverse recovery time ISD = 35A, di/dt = 100A/µs, Reverse recovery charge VDD = 20V, Tj = 150°C Reverse recovery current (see Figure 14) 75 170 4.5 Max. Unit 35 140 A A 1.5 V ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/13 Electrical characteristics STD35NF06 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/13 STD35NF06 Electrical characteristics Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Capacitance variations Figure 10. Normalized on resistance vs. temperature Figure 11. Source-drain diode forward characteristics 7/13 Test circuit 3 STD35NF06 Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/13 Figure 17. Switching time waveform STD35NF06 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/13 Package mechanical data STD35NF06 DPAK MECHANICAL DATA mm. inch DIM. MAX. MIN. A A1 A2 B b4 MIN. 2.2 0.9 0.03 0.64 5.2 TYP 2.4 1.1 0.23 0.9 5.4 0.086 0.035 0.001 0.025 0.204 0.094 0.043 0.009 0.035 0.212 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 0.45 0.48 6 0.6 0.6 6.2 0.017 0.019 0.236 0.023 0.023 0.244 6.6 0.252 5.1 6.4 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.260 0.185 0.090 4.6 10.1 0.6 MAX. 0.200 4.7 2.28 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 10/13 STD35NF06 5 Packing mechanical data Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 D1 1.5 E 1.65 MIN. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 40 15.7 MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 F R MIN. MAX. K0 W inch MAX. 1.574 16.3 0.618 0.641 11/13 Revision history 6 STD35NF06 Revision history Table 7. 12/13 Revision history Date Revision Changes 21-Jun-2004 2 Preliminary version 06-Jul-2006 3 New template, no content change 20-Feb-2007 4 Typo mistake on page 1 STD35NF06 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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