STMICROELECTRONICS STB40NS15

STB40NS15
N-channel 150V - 0.045Ω - 40A - D2PAK
MESH OVERLAY™ Power MOSFET
Features
Type
VDSS
STB40NS15
150V
RDS(on)
ID
(max)
<0.052Ω
■
Exceptional dv/dt capability
■
Gate charge minimized
■
Very low intrinsic capacitances
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D2PAK
Applications
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40A
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Switching application
Description
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This Power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
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Figure 1.
Internal schematic diagram
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Table 1.
Device summary
Part number
Marking
Package
Packaging
STB40NS15T4
B40NF15
D2PAK
Tape & reel
October 2007
Rev 4
1/13
www.st.com
13
Contents
STB40NS15
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuit
................................................ 8
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STB40NS15
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
VDS
Parameter
VDGR
VGS
Value
Unit
Drain-source voltage (VGS = 0)
150
V
Drain-gate voltage (RGS = 20 kΩ)
150
V
Gate- source voltage
± 20
V
A
ID
Drain current (continuous) at TC = 25°C
40
ID
Drain current (continuous) at TC = 100°C
25
Drain current (pulsed)
160
Total dissipation at TC = 25°C
300
Derating Factor
ro
IDM
(1)
Ptot
2
dv/dt
Peak diode recovery avalanche energy
Tstg
Storage temperature
Max. operating junction temperature
Tj
Table 3.
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Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
let
Symbol
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Table 4.
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Parameter
Rthj-case
TJ
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Thermal data
Symbol
let
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1. Pulse width limited by safe operating area.
P
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Maximum lead temperature for soldering purpose
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A
A
du
W
W/°C
7
V/ns
-65 to 175
°C
value
Unit
0.5
°C/W
62.5
°C/W
300
°C
Max value
Unit
Avalanche characteristics
Parameter
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
40
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
350
mJ
3/13
Electrical characteristics
2
STB40NS15
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
V(BR)DSS
Drain-source
breakdown voltage
ID = 250µA, VGS =0
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating,
TC = 125°C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 20A
Table 6.
Forward
transconductance
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
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Parameter
gfs (1)
Qg
Qgs
Qgd
Min.
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Test conditions
)-
Typ.
Max.
150
Unit
V
1
10
µA
µA
±100
nA
3
4
V
0.045
0.052
Ω
Typ.
Max.
Unit
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Dynamic
Symbol
td(on)
tr
td(off)
tf
Test conditions
Min.
VDS = 10V, ID = 20A
29.4
S
VDS = 25V, f = 1MHz,
VGS = 0
2420
380
160
pF
pF
pF
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 75V, ID = 20A
RG = 4.7Ω VGS = 10V
(see Figure 13)
25
45
85
35
ns
ns
ns
ns
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 120V, ID = 40A,
VGS = 10V, RG = 4.7Ω
(see Figure 14)
100
17
47
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1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
110
nC
nC
nC
STB40NS15
Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD (2)
Forward on voltage
ISD
trr
Qrr
Test conditions
Min.
Typ.
ISD = 40A, VGS = 0
270
200
1.5
IRRM
Reverse recovery time
ISD = 40A, di/dt = 100A/µs,
Reverse recovery charge VDD = 100V, Tj = 150°C
Reverse recovery current (see Figure 15)
Max.
Unit
40
160
A
A
1.5
V
ns
nC
A
)
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1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
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Electrical characteristics
STB40NS15
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
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Figure 4.
Output characterisics
Figure 5.
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Transfer characteristics
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Figure 6.
Transconductance
Figure 7.
Static drain-source on resistance
STB40NS15
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
Figure 10. Normalized gate threshold voltage
vs temperature
Capacitance variations
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Figure 11. Normalized on resistance vs
temperature
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Figure 12. Source-drain diode forward
characteristics
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Test circuit
3
STB40NS15
Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
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Figure 15. Test circuit for inductive load
Figure 16. Unclamped Inductive load test
switching and diode recovery times
circuit
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Figure 17. Unclamped inductive waveform
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Figure 18. Switching time waveform
STB40NS15
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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Package mechanical data
STB40NS15
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MAX.
MIN.
A
MIN.
4.4
TYP
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
0.036
B
0.7
0.93
0.027
B2
1.14
1.7
0.044
C
0.45
0.6
0.017
C2
1.23
1.36
0.048
D
8.95
9.35
0.352
D1
10
E1
10.4
0.393
let
G
8.5
4.88
5.28
15
1.27
L3
1.4
M
2.4
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L2
V2
0º
15.85
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(s)
MAX.
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0.067
0.023
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E
TYP.
0.053
0.368
0.315
0.334
0.192
0.208
0.590
0.625
1.4
0.050
0.055
1.75
0.055
0.068
3.2
0.094
0.126
0.4
0.015
4º
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STB40NS15
5
Packing mechanical data
Packing mechanical data
D2PAK FOOTPRINT
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TAPE AND REEL SHIPMENT
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REEL MECHANICAL DATA
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DIM.
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TAPE MECHANICAL DATA
A0
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mm
DIM.
inch
MIN.
MAX.
MIN.
10.5
10.7
0.413 0.421
15.7
15.9
0.618 0.626
-O
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
MAX.
inch
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
0.933 0.956
* on sales type
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Revision history
6
STB40NS15
Revision history
Table 8.
Document revision history
Date
Revision
Changes
21-Jun-2004
2
Preliminary version
26-Jun-2006
3
New template, no content change
24-Oct-2007
4
Minor text changes
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STB40NS15
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Please Read Carefully:
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Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
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