STD70N03L STD70N03L-1 N-channel 30V - 0.0059Ω - 70A - DPAK / IPAK STripFET™ III Power MOSFET General features ■ Type VDSS RDS(on) ID STD70N03L 30V <0.0073Ω 70A STD70N03L-1 30V <0.0073Ω 70A ■ Conduction losses reduced ■ Switching losses reduced ■ Low threshold device 3 3 RDS(ON) * Qg industry’s benchmark 2 1 DPAK 1 IPAK Description This product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STD70N03L D70N03L DPAK Tape & reel STD70N03L-1 D70N03L-1 IPAK Tube June 2006 Rev 1 1/16 www.st.com 16 Contents STD70N03L - STD70N03L-1 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 8 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 STD70N03L - STD70N03L-1 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage Value Unit 30 V ± 20 V ID Drain current (continuous) at TC = 25°C 70 A ID Drain current (continuous) at TC = 100°C 50 A IDM (1) Drain current (pulsed) 280 A PTOT Total dissipation at TC = 25°C 70 W Derating factor 0.47 W/°C EAS (2) Single pulse avalanche energy 300 mJ Tj Operating junction temperature Storage temperature -55 to 175 °C Value Unit Tstg 1. Pulse width limited by safe operating area 2. Starting Tj =25°C, Id = 30A, Vdd = 15V Table 2. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case Max 2.14 °C/W Rthj-amb Thermal resistance junction-amb Max 100 °C/W Maximum lead temperature for soldering purpose 275 °C Tl 3/16 Electrical characteristics 2 STD70N03L - STD70N03L-1 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test condictions ID = 250µA, VGS= 0 IDSS Zero gate voltage drain VDS = 20V, current (VGS = 0) VDS = 20V,Tc = 125°C IGSS Gate body leakage current(VDS = 0) VGS(th) Min. VGS= 10V, ID= 35A @Tj=125°C VGS= 5V, ID= 35A @Tj=125°C Table 4. Symbol ±100 nA V Ω Ω Ω Ω Dynamic Parameter Test condictions Min. Typ. Max. Unit VDS =10V, ID = 15A Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1MHz, VGS=0 VGS =5V Qgd Total gate charge Gate-source charge Gate-drain charge Qgls (2) Third-quadrant gate charge VDS <0V, VGS =10V 15 nC Gate input resistance f=1MHz Gate DC Bias =0 Test signal level =20mV open drain 1.5 Ω Ciss Coss Crss Qg Qgs RG VDD=15V, ID = 70A (see Figure 7) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 4/16 µA µA Forward transconductance gfs (1) 2. 1 10 0.0059 0.0073 0.007 0.013 0.0091 0.0113 0.0108 0.0201 VGS= 5V, ID= 35A Unit V 1 VGS= 10V, ID= 35A RDS(on) Max. 30 VGS = ±20V Gate threshold voltage VDS= VGS, ID = 250µA Static drain-source on resistance Typ. Gate charge for synchronous operation: see Appendix A: Power losses estimation 40 S 2200 380 49 pF pF pF 15.7 8.3 3.4 21 nC nC nC STD70N03L - STD70N03L-1 Table 5. Symbol td(on) tr td(off) tf Table 6. Symbol Electrical characteristics Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test condictions Min. Typ. Max. 21 95 19 15 VDD=15V, ID=35A, RG=4.7Ω, VGS=5V (see Figure 13) Unit ns ns ns ns Source drain diode Max Unit Source-drain current 70 A ISDM(1) Source-drain current (pulsed) 280 A VSD (2) Forward on voltage 1.3 V ISD trr Qrr IRRM Parameter Reverse recovery time Reverse recovery charge Reverse recovery current Test condictions Min Typ. ISD=35A, VGS=0 ISD = 70A, di/dt=100A/µs, VDD=20V, Tj=150°C (see Figure 18) 32 51 3.2 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/16 Electrical characteristics STD70N03L - STD70N03L-1 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/16 STD70N03L - STD70N03L-1 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized BVDSS vs temperature 7/16 Test circuit 3 STD70N03L - STD70N03L-1 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/16 Figure 18. Switching time waveform STD70N03L - STD70N03L-1 Appendix A Power losses estimation Power losses estimation Figure 19. Buck converter The power losses associated with the FETs in a synchronous buck converter can be estimated using the equations shown in the table below. The formulas give a good approximation, for the sake of performance comparison, of how different pairs of devices affect the converter efficiency. However a very important parameter, the wotking temperature, is not considered. The real device behavior is really dependent on how the heat generated inside the devices is removed to allow for a safer working junction temperature. The low side (SW2) device requires: ● Very low RDS(on) to reduce conduction losses ● Small Qgls to reduce the gate charge losses ● Small Coss to reduce losses due to output capacitance ● Small Qrr to reduce losses on SW1 during its turn-on ● The Cgd/Cgs ratio lower than Vth/Vgg ratio especially with low drain to source voltage to avoid the cross conduction phenomenon. The high side (SW1) device requires: ● Small Rg and Lg to allow higher gate current peak and to limit the voltage feedback on the gate ● Small Qg to have a faster commutation and to reduce gate charge losses ● Low RDS(on) to reduce the conduction losses 9/16 Power losses estimation STD70N03L - STD70N03L-1 High side switch (SW1) Low side switch (SW2) Pconduction R DS ( on ) • I L • δ R DS ( on ) • I L • ( 1 – δ) Pswitching IL V in • ( Q gsth ( SW1 ) + Q gd ( SW1 ) ) • f • ---Ig Zero voltage switching 2 Recovery Not applicable Conduction Not applicable 2 1 Vin • Q rr ( SW2 ) • f Pdiode V f ( SW2 ) • I L • t deadtime • f Pgate(Qg) Q g ( SW1 ) • V gg • f Q gls ( SW2 ) • V gg • f PQoss V in • Q oss ( SW1 ) • f -------------------------------------------------2 V in • Q oss ( SW2 ) • f -------------------------------------------------2 Parameter Meaning d Duty-cycle Qgsth Post threshold gate charge Qgls Third quadrant gate charge Pconduction On state losses Pswitching On-off transition losses Pdiode Conduction and reverse recovery diode losses Pgate Gate driver losses PQoss Output capacitance losses 10/16 STD70N03L - STD70N03L-1 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/16 Package mechanical data STD70N03L - STD70N03L-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 12/16 STD70N03L - STD70N03L-1 Package mechanical data DPAK MECHANICAL DATA mm. inch DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 TYP 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 MAX. MIN. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 6.6 0.252 5.1 6.4 0.260 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.185 0.090 4.6 10.1 0.6 MAX. 0.200 4.7 2.28 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 13/16 Packaging mechanical data 5 STD70N03L - STD70N03L-1 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 14/16 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD70N03L - STD70N03L-1 6 Revision history Revision history Table 7. Revision history Date Revision 29-Jun-2006 1 Changes First Release 15/16 STD70N03L - STD70N03L-1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16