STB120NH03L - STI120NH03L STP120NH03L N-channel 30V - 0.005Ω - 60A - TO-220 / D2PAK / I2PAK STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STB120NH03L 30V <0.0055Ω 60(1) STP120NH03L 30V <0.0055Ω 60(1) STI120NH03L 30V <0.0055Ω 60(1) 3 1 3 1 2 D2PAK TO-220 1. Value limited by wire bonding ■ RDS(on) *Qg industry’s benchmark Low ■ Conduction losses reduced ■ Switching losses reduced ■ Low Threshold device 3 12 I2PAK Description Internal schematic diagram These devices utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. It is ideal in high performance DC-DC converter applications where efficiency is to be achieved at very high output currents. Applications ■ Switching application Order codes Part number Marking Package Packaging Tape & reel STB120NH03L B120NH03L STI120NH03L 120NH03L I²PAK Tube STP120NH03L P120NH03L TO-220 Tube February 2007 D 2PAK Rev 7 1/17 www.st.com 17 Contents STB120NH03L - STI120NH03L - STP120NH03L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 ................................................ 8 STB120NH03L - STI120NH03L - STP120NH03L 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit 30 V ± 20 V Drain current (continuous) at TC = 25°C 60 A Drain current (continuous) at TC = 100°C 60 A Drain current (pulsed) 240 A Total dissipation at TC = 25°C 110 W Derating factor 0.73 W/°C EAS (3) Single pulse avalanche energy 700 mJ TJ Tstg Operating junction temperature Storage temperature -55 to 175 °C VDS Drain-source voltage (VGS = 0V) VGS Gate-source voltage ID (1) ID (1) IDM (2) PTOT 1. Value limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting TJ = 25°C, ID = 30A, VDD < 30V Table 2. Thermal data RthJC Thermal resistance junction-case max 1.30 °C/W RthJA Thermal resistance junction-amb max 62.5 °C/W Maximum lead temperature for soldering purpose 300 °C Tl 3/17 Electrical characteristics 2 STB120NH03L - STI120NH03L - STP120NH03L Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 250µA, VGS= 0 IDSS IGSS Gate body leakage current VGS = ±20V (VDS = 0) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 30A 1 VGS = 5V, ID = 30A Unit V 1 10 µA µA ±100 µA 1.8 3 V 0.005 0.006 0.0055 0.0105 Ω Ω Typ. Max. Dynamic Parameter Test conditions Min. Unit Crss Input capacitance Output capacitance Reverse transfer capacitance td(on) tr td(off) tf Turn-on delay time Rise time Off voltage rise time Fall time VDD = 15V, ID = 30A, RG = 4.7Ω, VGS = 10V (see Figure 12) 16 95 48 23 ns ns ns ns Rg Gate input resistance f = 1MHz gate DC bias=0 test signal level=20mV open drain 1.3 Ω Qg Total gate charge Gate-source charge Gate-drain charge VGS =10V (see Figure 13) 57 12 7 Qoss (1) Output charge VDS = 24V, VGS = 0 27 ns Qgls (2) Third-quadrant gate charge VDS < 0, VGS= 0V 55 ns Ciss Coss Qgs Qgd VDS = 25V, f = 1MHz, VGS = 0 VDD=15V, ID = 60A 1. Qoss = Coss* ∆VIN, Coss = Cgd + Cds. See power losses calculation 2. Gate charge for synchronous operation. 4/17 Max. 30 VDS = Max rating, TC=125°C VGS(th) Symbol Typ. VDS = Max rating, Zero gate voltage drain current (VGS = 0) Table 4. Min. 4100 680 70 pF pF pF 77 nC nC nC STB120NH03L - STI120NH03L - STP120NH03L Table 5. Symbol ISD ISDM VSD (1) trr Qrr IRRM Electrical characteristics Source drain diode Parameter Test conditions Min. Typ. Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 30A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 60A, di/dt = 100A/µs, VDD = 30V, TJ =150°C 46 64 2.8 Max. Unit 60 240 A A 1.4 V ns nC A 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/17 Electrical characteristics STB120NH03L - STI120NH03L - STP120NH03L 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Normalized BVDSS vs temperature Figure 6. Static drain-source on resistance 6/17 STB120NH03L - STI120NH03L - STP120NH03L Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/17 Test circuit 3 STB120NH03L - STI120NH03L - STP120NH03L Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/17 Figure 17. Switching time waveform STB120NH03L - STI120NH03L - STP120NH03L 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/17 Package mechanical data STB120NH03L - STI120NH03L - STP120NH03L TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 10/17 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STB120NH03L - STI120NH03L - STP120NH03L Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 10 E1 0.315 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 R 0º 0.126 0.015 4º 3 V2 0.4 1 11/17 Package mechanical data STB120NH03L - STI120NH03L - STP120NH03L TO-262 (I2PAK) MECHANICAL DATA mm. inch DIM. MIN. 12/17 MAX. MIN. A 4.40 TYP 4.60 0.173 TYP. MAX. A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 0.181 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 STB120NH03L - STI120NH03L - STP120NH03L 5 Packing mechanical data Packing mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 13/17 Appendix A 6 STB120NH03L - STI120NH03L - STP120NH03L Appendix A Figure 18. Buck converter: power losses estimation The power losses associated with the FETs in a synchronous buck converter can be estimated using the equations shown in the table below. The formulas give a good approximation, for the sake of performance comparison, of how different pairs of devices affect the converter efficiency. However a very important parameter, the working temperature, is not considered. The real device behavior is really dependent on how the heat generated inside the devices is removed to allow for a safer working junction temperature. ● ● The low side (SW2) device requires: – Very low RDS(on) to reduce conduction losses – Small Qgls to reduce the gate charge losses – Small Coss to reduce losses due to output capacitance – Small Qrr to reduce losses on SW1 during its turn-on – The Cgd/Cgs ratio lower than Vth/Vgg ratio especially with low drain to source – voltage to avoid the cross conduction phenomenon; The high side (SW1) device requires: – 14/17 Small Rg and Ls to allow higher gate current peak and to limit the voltage feedback on the gate – Small Qg to have a faster commutation and to reduce gate charge losses – Low RDS(on) to reduce the conduction losses. STB120NH03L - STI120NH03L - STP120NH03L Table 6. Appendix A Power losses calculation High side switching (SW1) Low side switch (SW2) R DS(on)SW1 * I 2L * δ R DS(on)SW2 * I 2L * (1 − δ ) Pconduction Pswitching Vin * (Q gsth(SW1) + Q gd(SW1) ) * f * IL Ig Zero Voltage Switching Recovery(1) Not applicable Vin * Q rr(SW2) * f Conduction Not applicable Vf(SW2) * I L * t deadtime * f Pgate(QG) Q g(SW1) * Vgg * f Q gls(SW2) * Vgg * f PQoss Vin * Q oss(SW1) * f Vin * Q oss(SW2) * f 2 2 Pdiode 1. Dissipated by SW1 during turn-on Table 7. Parameters meaning Parameter d Meaning Duty-cycle Qgsth Post threshold gate charge Qgls Third quadrant gate charge Pconduction Pswitching On state losses On-off transition losses Pdiode Conduction and reverse recovery diode losses Pgate Gate drive losses PQoss Output capacitance losses 15/17 Revision history 7 STB120NH03L - STI120NH03L - STP120NH03L Revision history Table 8. 16/17 Revision history Date Revision Changes 20-Dec-2004 4 First release 20-Dec-2005 5 New device inserted 19-Jun-2006 6 The document has been reformatted 16-Feb-2007 7 Added I²PAK package STB120NH03L - STI120NH03L - STP120NH03L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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