STE180NE10 N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET™ Power MOSFET General features Type VDSS RDS(on) ID STE180NE10 100V <6mΩ 180A ■ 100% avalanche tested ■ Low intrinsic capacitance ■ Gate charge minimized ■ Reduced voltage spread ISOTOP Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STE180NE10 E180NE10 ISOTOP Tube February 2007 Rev 6 1/12 www.st.com 12 Contents STE180NE10 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STE180NE10 1 Electrical ratings Electrical ratings Table 1. Symbol Absolute maximum ratings Value Unit Drain-source voltage (VGS = 0) 100 V Drain-gate voltage (RGS = 20kΩ) 100 V Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 180 A ID Drain current (continuous) at TC = 100°C 119 A IDM (1) Drain current (pulsed) 360 A PTOT Total dissipation at TC = 25°C 360 W Derating factor 2.88 W/°C VISO Insulation withstand voltage (AC-RMS) 2500 V Tj Tstg Operating junction temperature storage temperature -55 to 150 °C VDS VDGR VGS Parameter 1. Pulse width limited by safe operating area Table 2. Rthj-case Table 3. Symbol Thermal data Thermal resistance junction-case max 0.37 °C/W Avalanche characteristics Parameter Max value Unit IAR Avalanche Current, Repetitive or NotRepetitive (pulse width limited by Tj max) 60 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 25 V) 720 mJ 3/12 Electrical characteristics 2 STE180NE10 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage ID =1mA, VGS =0 IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating VDS = max rating, TC = 125°C IGSS Gate-body leakage current (VDS = 0) VGS = ± 20V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 40A Table 5. Symbol Test conditions Typ. Max. 100 2 Unit V 4 40 µA µA ±400 nA 3 4 V 4.5 6 Ω Typ. Max. Unit Dynamic Parameter Test conditions Min. gfs (1) Forward transconductance VDS>ID(on)xRDS(on)max ID=80 A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS = 0 21 2.5 0.9 nF nF nF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 90V, ID = 490A RG = 4.7Ω VGS = 10V (see Figure 12) 100 600 430 440 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 80V, ID = 180A, VGS = 10V, RG = 4.7Ω (see Figure 13) 585 120 210 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 4/12 Min. 30 S 795 nC nC nC STE180NE10 Electrical characteristics Table 6. Symbol Source drain diode Parameter ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD trr Qrr IRRM Test conditions Min. Typ. ISD = 180A, VGS = 0 ISD = 100A, Reverse recovery time di/dt = 100A/µs, Reverse recovery charge VDD = 50V, Tj = 150°C Reverse recovery current (see Figure 14) 235 1.65 14 Max. Unit 180 540 A A 1.5 V ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/12 Electrical characteristics STE180NE10 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12 STE180NE10 Electrical characteristics Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Capacitance variations Figure 10. Normalized on resistance vs. temperature Figure 11. Source-drain diode forward characteristics 7/12 Test circuit 3 STE180NE10 Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/12 Figure 17. Switching time waveform STE180NE10 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STE180NE10 ISOTOP MECHANICAL DATA mm DIM. MIN. A TYP. 11.8 inch MAX. MIN. 12.2 0.466 TYP. MAX. 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 J 4.1 4.3 0.161 0.157 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N 4 O 7.8 0.157 8.2 0.307 0.322 A G B O H J K L M 10/12 C F E D N STE180NE10 5 Revision history Revision history Table 7. Revision history Date Revision Changes 09-Sep-2004 4 Complete document 03-Aug-2006 5 New template, no content change 20-Feb-2007 6 Typo mistake on page 1 11/12 STE180NE10 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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