STE250NS10 N-channel 100V - 0.0045Ω - 220A - ISOTOP STripFET™ Power MOSFET General features Type VDSS RDS(on) ID STE250NS10 100V <0.0055Ω 220A ■ Standard threshold drive ■ 100% avalanche tested Description ISOTOP This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STE250NS10 E250NS10 ISOTOP Tube October 2006 Rev 2 1/12 www.st.com 12 Contents STE250NS10 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STE250NS10 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (vgs = 0) 100 V VGS Gate- source voltage ±20 V ID Drain current (continuos) at TC = 25°C 220 A ID Drain current (continuos) at TC = 100°C 156 A Drain current (pulsed) 880 A Total dissipation at TC = 25°C 500 W 4 W/°C IDM (1) PTOT Derating factor dv/dt(2) Peak diode recovery voltage slope 3.5 V/ns VISO Insulation winthstand voltage (DC) 2500 V TJ Tstg Operating junction temperature Storage temperature 150 -55 to 150 °C 0.25 °CW 50 °CW 1. Pulse width limited by safe operating area 2. ISD ≤220A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX Table 2. Thermal data Rthj-case Thermal resistance junction-case Max Rthj-a Thermal resistance junction-ambient Max Table 3. Symbol Avalanche characteristics Parameter Value Unit IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 220 A EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=64V) 800 mJ 3/12 Electrical characteristics 2 STE250NS10 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol Parameter V(BR)DSS Drain-source Breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. Typ. Max. 100 Unit V VDS = Max rating 50 µA VDS= Max rating, TC=125°C 500 µA Gate-body leakage current (VDS = 0) VGS = ± 20V ±400 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 4 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 125A IDSS Zero gate voltage Drain current (VGS = 0) IGSS Table 5. Symbol Parameter Forward transconductance Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Symbol Test conditions Min. VDS = 25V, f = 1 MHz, VGS = 0 VDD = 50V, ID = 22A, VGS = 10V Ω Typ. Max. Unit 60 S 31 nF 4.3 nF 1.2 nF 900 nC 160 nC 330 nC Switching times Parameter Test conditions VDD=50 V, ID=125A, Turn-on delay time Rise time td(off) tf Turn-off-delay time Fall time RG=4.7Ω, VGS= 10V tr(Voff) Off-voltage rise time fall time cross-over time VDD=80V, ID=220A, RG=4.7Ω, VGS=10V (see Figure 15) tc 3 0.0045 0.0055 VDS = 20V, ID=70A td(on) tr tf 2 Dynamic gfs Table 6. 4/12 On/off states RG=4.7Ω, VGS= 10V (see Figure 13) VDD=50 V, ID=125A, (see Figure 13) Min. Typ. 110 380 1100 300 950 330 600 Max. Unit ns ns ns ns ns ns ns STE250NS10 Electrical characteristics Table 7. Symbol ISD Source drain diode Parameter Test conditions Min Typ. Max Unit Source-drain current 220 A ISDM (1) Source-drain current (pulsed) 880 A VSD (2) Forward on voltage ISD = 220A, VGS = 0 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 220A, VDD = 30V di/dt = 100A/µs, Tj = 150°C (see Figure 15) trr Qrr IRRM 200 1.35 13.5 ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/12 Electrical characteristics STE250NS10 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12 STE250NS10 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized breakdown voltage vs temperature 7/12 Test circuit 3 STE250NS10 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/12 Figure 18. Switching time waveform STE250NS10 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 9/12 Package mechanical data STE250NS10 ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 0.157 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N 4 O 7.8 0.157 8.2 0.307 0.322 A G B O H J K L M 10/12 C F E D N STE250NS10 5 Revision history Revision history Table 8. Revision history Date Revision Changes 21-Jun-2004 1 Complete version 04-Oct-2006 2 New template, no content change 11/12 STE250NS10 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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