STG3P3M25N60 3 Phase inverter IGBT - SEMITOP®3 module PRELIMINARY DATA General features Type VCES STG3P3M25N60 600V VCE(sat)(Max) @ IC=7A, IC@80°C Ts=25°C < 2.5V 25A ■ N-channel very fast PowerMESH™ IGBT ■ Lower on-voltage drop (Vcesat) ■ Lower CRES / CIES ratio (no cross-conduction susceptbility) ■ Very soft ultra fast recovery antiparallel diode ■ High frequency operation up to 70 KHz ■ New generation products with tighter parameter distribution ■ One screw mounting ■ Compact design ■ Semitop®3 is a trademark of Semikron SEMITOP®3 Internal schematic diagram Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBT, with outstanding performances. Applications ■ High frequency inverters ■ Motor drivers Order codes Sales Type Marking Package Packaging STG3P3M25N60 G3P3M25N60 SEMITOP®3 SEMIBOX May 2006 Rev1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/12 www.st.com 12 Contents STG3P3M25N60 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Typical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STG3P3M25N60 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGS = 0) 600 V IC(1) Collector current (continuous) at Ts = 25°C 50 A IC(1) Collector current (continuous) at Ts = 80°C 25 A VGE Gate-emitter voltage ±20 V ICM(2) TP<1ms; Ts=25°C 100 A ICM TP<1ms; Ts=80°C 50 A Diode RMS forward current at Ts = 25°C 19 A PTOT Total dissipation at Ts = 25°C 96 W VISO Insulation withstand voltage A.C. (t=1min/sec; Ts=25°C) 2500/3000 V Tstg Storage temperature – 40 to 125 °C Operating junction temperature – 40 to 150 °C Value Unit 1.3 K/W IF Tj 1. Calculated value 2. Pulse width limited by max. junction temperature Table 2. Symbol Rth(j-s) Thermal resistance (for single IGBT) Parameter Thermal resistance junction-sink(1) Max. 1. Resistance value with conductive grease applied and maximum mounting torque equal to 2Nm 3/12 Electrical characteristics 2 STG3P3M25N60 Electrical characteristics (Ts=25°C unless otherwise specified) Table 3. IGBT-Inverter parameters Symbol Parameter VBR(CES) Collector-emitter breakdown voltage Test condictions IC= 1mA, VGE= 0 Collector cut-off Current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) VGE= ±20V , VCE= 0 VGE(th) Gate threshold voltage VCE= VGE, IC= 250µA VCE(sat) Collector-emitter saturation VGE= 15V, IC= 20A voltage VGE=15V, IC= 20A, Ts=125°C Symbol gfs (1) Cies Coes Cres Qg Qge Qgc Max. 600 Unit V 10 1 µA mA ±100 nA 5.75 V 1.85 1.7 2.5 V V Typ. Max. Unit vce=max rating, Ts= 125°C 3.75 Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test condictions VCE = 15V, IC= 20A VCE = 25V, f = 1MHz, VGE = 0 VCE = 390V, IC = 20A, VGE = 15V, (see Figure 8) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/12 Typ. VCE= Max rating, ts= 25°c ICES Table 4. Min. Min. 15 S 2200 225 50 pF pF pF 100 16 45 140 nC nC nC STG3P3M25N60 Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Table 6. Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets Switching on/off Parameter Turn-on delay time Current rise time Turn-on current slope Test condictions Min. VCC = 300V, IC = 20A RG= 33Ω, VGE= ±15V, Ts= 25°C Typ. Max. Unit 31 11 1600 ns ns A/µs 31 11.5 1500 ns ns A/µs 28 100 75 ns ns ns 66 150 130 ns ns ns (see Figure 9) Turn-on delay time Current rise time Turn-on current slope VCC = 300V, IC = 20A RG= 33Ω, VGE= ±15V, Ts=125°C (see Figure 9) Off voltage rise time Turn-off delay time Current fall time VCC = 300V, IC = 20A RG= 33Ω, VGE= ±15V, Ts=25°C (see Figure 9) Off voltage rise time Turn-off delay time Current fall time VCC = 300V, IC = 20A RG= 33Ω, VGE= ±15V, Ts=125°C (see Figure 9) Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Test condictions VCC = 300V, IC = 20A RG= 33Ω, VGE= ±15V, Ts=25°C Min. Typ. Max. Unit 220 330 550 µJ µJ µJ 450 770 1220 µJ µJ µJ (see Figure 9) Turn-on switching losses Turn-off switching losses Total switching losses VCC = 300V, IC = 20A RG= 33Ω, VGE= ±15V, Ts= 125°C (see Figure 9) 1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current 5/12 Electrical characteristics Table 7. Symbol Collector-emitter diode Parameter Test condictions Forward on-voltage trr Reverse recovery time ta If = 20A ,VR = 40V, Reverse recovery charge Ts = 25°C, di/dt = 100 A/µs Reverse recovery current (see Figure 4) Softness factor of the diode Qrr S If = 10A, Ts = 125°C trr Reverse Recovery Time ta If = 20A ,VR = 40V, Reverse recovery charge Ts =125°C, di/dt = 100A/µs Reverse recovery current (see Figure 4) Softness factor of the diode Qrr Irrm S Table 8. Symbol Rts Min. If = 10A Vf Irrm 6/12 STG3P3M25N60 Typ. Max. Unit 1.3 1.0 2.0 V V 44 32 66 3 0.375 ns ns nC A 88 56 237 5.4 0.57 ns ns nC A Temperature sensor Parameter Equivalent resistance Condictions 5%, Tr=25 (100)°C Min. Typ. Max. 5000 (493) Unit Ω STG3P3M25N60 2.1 Electrical characteristics Typical characteristics (curves) Figure 1. Output characteristics at Ts=25°C Figure 2. Output characteristics at Ts=125°C Figure 3. Capacitance variation Figure 4. Gate charge vs gate-emitter voltage Figure 5. Total switching losses vs gate Figure 6. resistance Total switching losses vs collector current 7/12 Test circuit STG3P3M25N60 3 Test circuit Figure 7. Test Circuit for Inductive Load Switching Figure 8. Figure 9. Switching Waveform Figure 10. Diode Recovery Time Waveform 8/12 Gate charge test circuit STG3P3M25N60 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STG3P3M25N60 SEMITOP®3 mechanical data Dim A A1 A2 A3 øb øb1 D D2 E E1 E2 e e1 e2 e3 f L L1 L2 L3 øP øP1 øp2 R 10/12 mm Min 15.30 15.23 Typ 15.50 15.43 10.50 10 1.50 1.60 54.70 55 52.50 30.70 31 22.55 22.75 28.50 3.90 4 2 2.90 3 5.40 5.50 2.50 3.43 3.50 11.80 12 5.20 4.30 4.40 12 14.50 1 SEMITOP®3 is a trademark of SEMIKRON Max 15.70 15.63 55.30 31.30 23 4.10 3.10 5.60 12.20 4.50 STG3P3M25N60 5 Revision history Revision history Table 9. Revision history Date Revision 29-May-2006 1 Changes Initial release. 11/12 STG3P3M25N60 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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