STMICROELECTRONICS STG3P3M25N60

STG3P3M25N60
3 Phase inverter
IGBT - SEMITOP®3 module
PRELIMINARY DATA
General features
Type
VCES
STG3P3M25N60
600V
VCE(sat)(Max)
@ IC=7A,
IC@80°C
Ts=25°C
< 2.5V
25A
■
N-channel very fast PowerMESH™ IGBT
■
Lower on-voltage drop (Vcesat)
■
Lower CRES / CIES ratio (no cross-conduction
susceptbility)
■
Very soft ultra fast recovery antiparallel diode
■
High frequency operation up to 70 KHz
■
New generation products with tighter
parameter distribution
■
One screw mounting
■
Compact design
■
Semitop®3 is a trademark of Semikron
SEMITOP®3
Internal schematic diagram
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBT, with outstanding
performances.
Applications
■
High frequency inverters
■
Motor drivers
Order codes
Sales Type
Marking
Package
Packaging
STG3P3M25N60
G3P3M25N60
SEMITOP®3
SEMIBOX
May 2006
Rev1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/12
www.st.com
12
Contents
STG3P3M25N60
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Typical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
................................................ 8
STG3P3M25N60
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGS = 0)
600
V
IC(1)
Collector current (continuous) at Ts = 25°C
50
A
IC(1)
Collector current (continuous) at Ts = 80°C
25
A
VGE
Gate-emitter voltage
±20
V
ICM(2)
TP<1ms; Ts=25°C
100
A
ICM
TP<1ms; Ts=80°C
50
A
Diode RMS forward current at Ts = 25°C
19
A
PTOT
Total dissipation at Ts = 25°C
96
W
VISO
Insulation withstand voltage A.C.
(t=1min/sec; Ts=25°C)
2500/3000
V
Tstg
Storage temperature
– 40 to 125
°C
Operating junction temperature
– 40 to 150
°C
Value
Unit
1.3
K/W
IF
Tj
1. Calculated value
2. Pulse width limited by max. junction temperature
Table 2.
Symbol
Rth(j-s)
Thermal resistance (for single IGBT)
Parameter
Thermal resistance junction-sink(1) Max.
1. Resistance value with conductive grease applied and maximum mounting torque equal to 2Nm
3/12
Electrical characteristics
2
STG3P3M25N60
Electrical characteristics
(Ts=25°C unless otherwise specified)
Table 3.
IGBT-Inverter parameters
Symbol
Parameter
VBR(CES)
Collector-emitter
breakdown voltage
Test condictions
IC= 1mA, VGE= 0
Collector cut-off Current
(VGE = 0)
IGES
Gate-emitter leakage
current (VCE = 0)
VGE= ±20V , VCE= 0
VGE(th)
Gate threshold voltage
VCE= VGE, IC= 250µA
VCE(sat)
Collector-emitter saturation VGE= 15V, IC= 20A
voltage
VGE=15V, IC= 20A, Ts=125°C
Symbol
gfs (1)
Cies
Coes
Cres
Qg
Qge
Qgc
Max.
600
Unit
V
10
1
µA
mA
±100
nA
5.75
V
1.85
1.7
2.5
V
V
Typ.
Max.
Unit
vce=max rating, Ts= 125°C
3.75
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test condictions
VCE = 15V, IC= 20A
VCE = 25V, f = 1MHz,
VGE = 0
VCE = 390V, IC = 20A,
VGE = 15V,
(see Figure 8)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
4/12
Typ.
VCE= Max rating, ts= 25°c
ICES
Table 4.
Min.
Min.
15
S
2200
225
50
pF
pF
pF
100
16
45
140
nC
nC
nC
STG3P3M25N60
Electrical characteristics
Table 5.
Symbol
td(on)
tr
(di/dt)on
td(on)
tr
(di/dt)on
tr(Voff)
td(off)
tf
tr(Voff)
td(off)
tf
Table 6.
Symbol
Eon(1)
Eoff(2)
Ets
Eon(1)
Eoff(2)
Ets
Switching on/off
Parameter
Turn-on delay time
Current rise time
Turn-on current slope
Test condictions
Min.
VCC = 300V, IC = 20A
RG= 33Ω, VGE= ±15V,
Ts= 25°C
Typ.
Max.
Unit
31
11
1600
ns
ns
A/µs
31
11.5
1500
ns
ns
A/µs
28
100
75
ns
ns
ns
66
150
130
ns
ns
ns
(see Figure 9)
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 300V, IC = 20A
RG= 33Ω, VGE= ±15V,
Ts=125°C
(see Figure 9)
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 300V, IC = 20A
RG= 33Ω, VGE= ±15V,
Ts=25°C
(see Figure 9)
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 300V, IC = 20A
RG= 33Ω, VGE= ±15V,
Ts=125°C
(see Figure 9)
Switching energy (inductive load)
Parameter
Turn-on switching losses
Turn-off switching losses
Total switching losses
Test condictions
VCC = 300V, IC = 20A
RG= 33Ω, VGE= ±15V,
Ts=25°C
Min.
Typ.
Max.
Unit
220
330
550
µJ
µJ
µJ
450
770
1220
µJ
µJ
µJ
(see Figure 9)
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 300V, IC = 20A
RG= 33Ω, VGE= ±15V,
Ts= 125°C
(see Figure 9)
1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
5/12
Electrical characteristics
Table 7.
Symbol
Collector-emitter diode
Parameter
Test condictions
Forward on-voltage
trr
Reverse recovery time
ta
If = 20A ,VR = 40V,
Reverse recovery charge
Ts = 25°C, di/dt = 100 A/µs
Reverse recovery current
(see Figure 4)
Softness factor of the diode
Qrr
S
If = 10A, Ts = 125°C
trr
Reverse Recovery Time
ta
If = 20A ,VR = 40V,
Reverse recovery charge
Ts =125°C, di/dt = 100A/µs
Reverse recovery current
(see Figure 4)
Softness factor of the diode
Qrr
Irrm
S
Table 8.
Symbol
Rts
Min.
If = 10A
Vf
Irrm
6/12
STG3P3M25N60
Typ.
Max.
Unit
1.3
1.0
2.0
V
V
44
32
66
3
0.375
ns
ns
nC
A
88
56
237
5.4
0.57
ns
ns
nC
A
Temperature sensor
Parameter
Equivalent resistance
Condictions
5%, Tr=25 (100)°C
Min.
Typ. Max.
5000
(493)
Unit
Ω
STG3P3M25N60
2.1
Electrical characteristics
Typical characteristics (curves)
Figure 1.
Output characteristics at
Ts=25°C
Figure 2.
Output characteristics at
Ts=125°C
Figure 3.
Capacitance variation
Figure 4.
Gate charge vs gate-emitter
voltage
Figure 5.
Total switching losses vs gate Figure 6.
resistance
Total switching losses vs
collector current
7/12
Test circuit
STG3P3M25N60
3
Test circuit
Figure 7.
Test Circuit for Inductive Load
Switching
Figure 8.
Figure 9.
Switching Waveform
Figure 10. Diode Recovery Time Waveform
8/12
Gate charge test circuit
STG3P3M25N60
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/12
Package mechanical data
STG3P3M25N60
SEMITOP®3 mechanical data
Dim
A
A1
A2
A3
øb
øb1
D
D2
E
E1
E2
e
e1
e2
e3
f
L
L1
L2
L3
øP
øP1
øp2
R
10/12
mm
Min
15.30
15.23
Typ
15.50
15.43
10.50
10
1.50
1.60
54.70
55
52.50
30.70
31
22.55
22.75
28.50
3.90
4
2
2.90
3
5.40
5.50
2.50
3.43
3.50
11.80
12
5.20
4.30
4.40
12
14.50
1
SEMITOP®3 is a trademark of SEMIKRON
Max
15.70
15.63
55.30
31.30
23
4.10
3.10
5.60
12.20
4.50
STG3P3M25N60
5
Revision history
Revision history
Table 9.
Revision history
Date
Revision
29-May-2006
1
Changes
Initial release.
11/12
STG3P3M25N60
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