STGF10NB60SD N-channel 10A - 600V - TO-220FP PowerMESH™ IGBT General features Type VCES STGF10NB60SD 600V IC VCE(sat) (Max)@ 25°C @100°C <1.8V 7A ■ Hight input impedance (voltage driven) ■ Low on-voltage drop ■ High current capability ■ Co-packaged with turboswitch™ antiparallel diode 3 1 2 TO-220FP Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). Internal schematic diagram Applications ■ Light dimmer ■ Static relays ■ Motor control Order codes Part number Marking Package Packaging STGF10NB60SD GF10NB60SD TO-220FP Tube May 2006 Rev 2 1/13 www.st.com 13 Contents STGF10NB60SD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ................................................ 9 STGF10NB60SD 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGS = 0) 600 V IC Collector current (continuous) at 25°C 20 A IC Collector current (continuous) at 100°C 7 A Collector current (pulsed) 100 A VGE Gate-emitter voltage ± 20 V PTOT Total dissipation at TC = 25°C 25 W VISO Insulation withstand voltage A.C.(t = 1sec;Tc=25°C) 2500 V Tstg Operating junction temperature – 55 to 150 °C VCES ICM (1) Tj Parameter Storage temperature 1. Pulse width limited by max. junction temperature. Table 2. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case Max Rthj-amb Thermal resistance junction-ambient Max Value Unit 5 °C/W 62.5 °C/W 3/13 Electrical characteristics 2 STGF10NB60SD Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol Parameter Test condictions Min. Typ. Max. Unit VBR(CES) Collector-emitter breakdown IC = 250µA, VGE = 0 voltage 600 V VBR(CES) Collector-emitter breakdown IC = 1mA, VGE = 0 voltage 20 V VCE(SAT) Collector-emitter saturation voltage VGE =15V, IC = 5A, Tj= 25°C VGE =15V, IC = 10A, Tj= 25°C VGE =15V, IC = 10A, Tj= 125°C Gate threshold voltage VCE = VGE, IC = 250µA ICES Collector-emitter leakage current (VCE = 0) IGES VGE(th) gfs Table 4. Symbol 1.15 1.35 1.25 1.8 V V V 5 V VCE = Max rating ,Tj =25 °C VCE = Max rating ,Tj =125 °C 10 100 µA µA Gate-emitter leakage current (VCE = 0) VGE = ± 20V , VCE = 0 ±100 nA Forward transconductance VCE = 25 V , IC =10 A 2.5 5 S Dynamic Parameter Test condictions Min. Typ. Input capacitance Output capacitance Reverse transfer capacitance VCE = 25V, f = 1 MHz, VGE= 0 610 65 12 Qg Total gate charge VCE = 400V, IC = 10 A, VGE = 15V 33 ICL Turn-off SOA minimum current Vclamp= 480V, RG= 1kΩ, Tj= 125°C Cies Coes Cres 4/13 Static 20 Max. Unit pF pF pF nC A STGF10NB60SD Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on Eon (1) tr(Voff) td(off) tf Eoff (2) tr(Voff) td(off) tf Eoff (2) Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on switching losses Off voltage rise time Turn-off delay time Current fall time Turn-off switching losses Off voltage rise time Turn-off delay time Current fall time Turn-off switching losses Test condictions Min. VCC = 480 V, IC = 10 A RG = 1KΩ , VGE = 15 V Tj= 25°C (see Figure 15) VCC = 480 V, IC = 10 A RG = 1KΩ , VGE = 15 TJ=25°C (see Figure 15) VCC = 480 V, IC = 10 A RG = 1KΩ , VGE = 15 Tj=125 °C (see Figure 15) Typ. Max. Unit 0.7 0.46 8 0.6 µs µs A/µs mJ 2.2 1.2 1.2 5.0 µs µs µs mJ 3.8 1.2 1.9 8.0 µs µs µs mJ 1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current Table 6. Symbol Collector-emitter diode Parameter Test condictions Min Typ. If Ifm Forward current Forward current pulsed Vf Forward on-voltage If = 3.5 A If = 3.5 A, Tj = 125 °C 1.4 1.15 Reverse recovery time Reverse recovery charge Reverse recovery current If = 7 A ,VR = 20 V, Tj =125°C, di/dt =100A/µs (see Figure 18) 50 70 2.7 trr Qrr Irrm Max Unit 7 56 A A 1.9 V V ns nC A 5/13 Electrical characteristics STGF10NB60SD 2.1 Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs temperature Figure 5. Collector-emitter on voltage vs collector current Figure 6. Normalized gate threshold vs temperature 6/13 STGF10NB60SD Electrical characteristics Figure 7. Normalized breakdown voltage vs temperature Figure 8. Gate charge vs gate-emitter voltage Figure 9. Capacitance variations Figure 10. Switching losses vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current 7/13 Electrical characteristics Figure 13. Thermal impedance 8/13 STGF10NB60SD Figure 14. Turn-off SOA STGF10NB60SD 3 Test circuit Test circuit Figure 15. Test circuit for inductive load switching Figure 16. Gate charge test circuit Figure 17. Switching waveforms Figure 18. Diode recovery times waveform 9/13 Package mechanical data 4 STGF10NB60SD Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STGF10NB60SD Package mechanical data TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 11/13 Revision history 5 STGF10NB60SD Revision history Table 7. 12/13 Revision history Date Revision 15-May-2006 2 Changes New template STGF10NB60SD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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