STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh™ low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS(on) ID STB160N75F3 75V 4.2mΩ 120A (1) STP160N75F3 75V 4.5mΩ 120A (1) STW160N75F3 75V 4.5mΩ (1) 3 120A 1 2 TO-220 TO-247 1. Current limited by package ■ Ultra low on-resistance ■ 100% Avalanche tested 3 1 D²PAK Description This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “Single Feature Size™“strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STB160N75F3 160N75F3 D²PAK Tape & reel STP160N75F3 160N75F3 TO-220 Tube STW160N75F3 160N75F3 TO-247 Tube February 2007 Rev 1 This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice. 1/13 www.st.com 13 Contents STB160N75F3 - STP160N75F3 - STW160N75F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ................................................ 6 STB160N75F3 - STP160N75F3 - STW160N75F3 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit 75 V VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ± 20 V Drain current (continuous) at TC = 25°C 120 A Drain current (continuous) at TC = 100°C 96 A Drain current (pulsed) 480 A Total dissipation at TC = 25°C 315 W Derating factor 2.1 W/°C dv/dt Peak diode recovery voltage slope Tbd V/ns EAS Single pulse avalanche energy Tbd mJ Tj Operating junction temperature Storage temperature -55 to 175 °C Value Unit ID (1) ID (1) IDM (2) PTOT (3) Tstg 1. Current limited by package 2. Pulse width limited by safe operating area 3. Rated according to Rthj-case Table 2. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case max 0.48 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C 3/13 Electrical characteristics 2 STB160N75F3 - STP160N75F3 - STW160N75F3 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 250µA, VGS= 0 75 V VDS = Max rating, VDS = Max rating,@125°C 10 100 µA µA Gate body leakage current (VDS = 0) VGS = ±20V ±200 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 4 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 60A 4.5 4.2 mΩ mΩ IDSS Zero gate voltage drain current (VGS = 0) IGSS Table 4. Symbol Parameter Test conditions VDS =15V, ID= 4.5A Forward transconductance Ciss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 Total gate charge Gate-source charge Gate-drain charge VGS =10V Crss Qg Qgs Qgd 2 3.5 3.2 D²PAK Dynamic gfs(1) Coss ID = 10A VDD=44V, ID = 60A (see Figure 2) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 4/13 Min. Typ. Max Unit Min Typ Max Unit Tbd S 7000 1100 32 pF pF pF 110 Tbd Tbd Tbd nC nC nC STB160N75F3 - STP160N75F3 - STW160N75F3 Table 5. Symbol td(on) tr td(off) tf Table 6. Symbol ISD Electrical characteristics Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions RG=4.7Ω, VGS=10V, (see Figure 4) Parameter Test conditions VSD(2) Forward on voltage ISD=120A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120A, di/dt = 100A/µs, VDD=30 V, Tj=150°C (see Figure 3) IRRM Max. Unit ns ns ns ns Source drain diode Source-drain current Source-drain current (pulsed) Qrr Typ. Tbd Tbd Tbd Tbd VDD=35 V, ID= 60A, ISDM(1) trr Min. Min. Typ. 75 195 5 Max. Unit 120 480 A A 1.5 V ns nC A 1. Pulse with limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/13 Test circuit STB160N75F3 - STP160N75F3 - STW160N75F3 3 Test circuit Figure 1. Switching times test circuit for resistive load Figure 3. Test circuit for inductive load Figure 4. switching and diode recovery times Unclamped inductive load test circuit Figure 5. Unclamped inductive waveform Switching time waveform 6/13 Figure 2. Figure 6. Gate charge test circuit STB160N75F3 - STP160N75F3 - STW160N75F3 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/13 Package mechanical data STB160N75F3 - STP160N75F3 - STW160N75F3 TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 8/13 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STB160N75F3 - STP160N75F3 - STW160N75F3 Package mechanical data TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 0.620 0.214 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 5.50 0.216 9/13 Package mechanical data STB160N75F3 - STP160N75F3 - STW160N75F3 D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 10.4 0.393 D1 E 8 10 E1 0.315 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 R 0º 0.126 0.015 4º 3 V2 0.4 1 10/13 STB160N75F3 - STP160N75F3 - STW160N75F3 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 11/13 Revision history 6 STB160N75F3 - STP160N75F3 - STW160N75F3 Revision history Table 7. 12/13 Revision history Date Revision 07-Feb-2007 1 Changes First release STB160N75F3 - STP160N75F3 - STW160N75F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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