STMICROELECTRONICS STP4N150_06

STP4N150
STW4N150
N-channel 1500V - 5Ω - 4A - TO-220/TO-247
Very high PowerMESH™ Power MOSFET
General features
Type
VDSS
(@Tjmax)
RDS(on)
ID
STP4N150
1500 V
<7Ω
4A
STW4N150
1500 V
<7Ω
4A
■
Avalanche ruggedness
■
Gate charge minimized
■
Very low intrinsic capacitances
■
High speed switching
3
1
TO-220
2
TO-247
Description
Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has
designed an advanced family of Power MOSFETs
with outstanding performances. The strengthened
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, unrivalled gate charge and
switching characteristics.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STP4N150
P4N150
TO-220
Tube
STW4N150
W4N150
TO-247
Tube
August 2006
Rev 4
1/14
www.st.com
14
Contents
STP4N150 - STW4N150
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STP4N150 - STW4N150
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
VDS
VDGR
VGS
Parameter
Value
Unit
Drain-source voltage (VGS = 0)
1500
V
Drain-gate voltage (RGS = 20 kΩ)
1500
V
Gate- source voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
4
A
ID
Drain current (continuous) at TC = 100°C
2.5
A
IDM (1)
Drain current (pulsed)
12
A
PTOT
Total dissipation at TC = 25°C
160
W
1
W/°C
-55 to 150
°C
Derating factor
Tj
Tstg
Operating junction temperature
Storage temperature
1. Pulse width limited by safe operating area
Table 2.
Symbol
Thermal data
Parameter
Value
Unit
TO-220
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
Table 3.
Symbol
TO-247
0.78
°C/W
62.5
50
°C/W
Avalanche characteristics
Parameter
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
Unit
4
A
350
mJ
3/14
Electrical characteristics
2
STP4N150 - STW4N150
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
V(BR)DSS
Drain-source
Breakdown voltage
Test conditions
ID = 1 mA, VGS = 0
Zero gate voltage
Drain current (VGS = 0)
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 30 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on
Static drain-source on
resistance
VGS = 10 V, ID = 2 A
Symbol
gfs (1)
Ciss
Coss
Crss
Td(on)
Tr
td(off)
tf
Qg
Qgs
Qgd
Max.
1500
3
Unit
V
10
500
µA
µA
± 100
µA
4
5
V
5
7
Ω
Typ.
Max.
Unit
VDS = Max Rating, TC = 125°C
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
VDS = 30 V , ID = 2 A
VDS = 25 V, f = 1 MHz,
VGS = 0
VDD = 750 V, ID = 2 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
VDD = 600 V, ID = 4 A,
VGS = 10 V
(see Figure 19)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
4/14
Typ.
VDS = Max Rating
IDSS
Table 5.
Min.
Min.
3.5
S
1300
120
12
pF
pF
pF
35
30
45
45
ns
ns
ns
ns
30
10
9
50
nC
nC
nC
STP4N150 - STW4N150
Table 6.
Symbol
Electrical characteristics
Source drain diode
Parameter
ISD
ISDM(1)
Source-drain current
Source-drain current (pulsed)
VSD(2)
Forward on voltage
trr
Qrr
IRRM
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
Min.
Typ.
ISD = 4 A, VGS = 0
ISD = 4 A, di/dt = 100
A/µs
VDD = 45V
(see Figure 18)
ISD = 4 A, di/dt = 100
A/µs
VDD = 45V, Tj = 150°C
(see Figure 18)
Max.
Unit
4
12
A
A
2
V
510
3
12
ns
µC
A
615
4
12.6
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/14
Electrical characteristics
STP4N150 - STW4N150
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area for TO-220
Figure 2.
Thermal impedance for TO-220
Figure 3.
Safe operating area for TO-247
Figure 4.
Thermal impedance for TO-247
Figure 5.
Output characterisics
Figure 6.
Transfer characteristics
6/14
STP4N150 - STW4N150
Electrical characteristics
Figure 7.
Transconductance
Figure 9.
Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage
vs temperature
Figure 8.
Static drain-source on resistance
Figure 12. Normalized on resistance vs
temperature
7/14
Electrical characteristics
Figure 13. Source-drain diode forward
characteristics
Figure 15. Maximum avalanche energy vs
temperature
8/14
STP4N150 - STW4N150
Figure 14. Normalized BVDSS vs temperature
STP4N150 - STW4N150
3
Test circuit Package mechanical data
Test circuit Package mechanical data
Figure 16. Unclamped inductive load test
circuit
Figure 17. Unclamped inductive waveform
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
switching and diode recovery times
9/14
Package mechanical data
4
STP4N150 - STW4N150
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/14
STP4N150 - STW4N150
Package mechanical data
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
11/14
Package mechanical data
STP4N150 - STW4N150
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
0.134
b2
3.0
3.40
0.118
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
e
5.45
0.620
0.214
L
14.20
14.80
0.560
L1
3.70
4.30
0.14
L2
18.50
0.582
0.17
0.728
øP
3.55
3.65
0.140
0.143
øR
4.50
5.50
0.177
0.216
S
12/14
TYP
5.50
0.216
STP4N150 - STW4N150
5
Revision history
Revision history
Table 7.
Revision history
Date
Revision
Changes
29-Mar-2005
1
First release
07-Jul-2005
2
Removed TO-220FP
07-Oct-2005
3
Complete version
10-Aug-2006
4
New template, no content change
13/14
STP4N150 - STW4N150
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