STP4N150 STW4N150 N-channel 1500V - 5Ω - 4A - TO-220/TO-247 Very high PowerMESH™ Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID STP4N150 1500 V <7Ω 4A STW4N150 1500 V <7Ω 4A ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching 3 1 TO-220 2 TO-247 Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STP4N150 P4N150 TO-220 Tube STW4N150 W4N150 TO-247 Tube August 2006 Rev 4 1/14 www.st.com 14 Contents STP4N150 - STW4N150 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STP4N150 - STW4N150 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VDGR VGS Parameter Value Unit Drain-source voltage (VGS = 0) 1500 V Drain-gate voltage (RGS = 20 kΩ) 1500 V Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 4 A ID Drain current (continuous) at TC = 100°C 2.5 A IDM (1) Drain current (pulsed) 12 A PTOT Total dissipation at TC = 25°C 160 W 1 W/°C -55 to 150 °C Derating factor Tj Tstg Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area Table 2. Symbol Thermal data Parameter Value Unit TO-220 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Table 3. Symbol TO-247 0.78 °C/W 62.5 50 °C/W Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Value Unit 4 A 350 mJ 3/14 Electrical characteristics 2 STP4N150 - STW4N150 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter V(BR)DSS Drain-source Breakdown voltage Test conditions ID = 1 mA, VGS = 0 Zero gate voltage Drain current (VGS = 0) IGSS Gate-body leakage current (VDS = 0) VGS = ± 30 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on Static drain-source on resistance VGS = 10 V, ID = 2 A Symbol gfs (1) Ciss Coss Crss Td(on) Tr td(off) tf Qg Qgs Qgd Max. 1500 3 Unit V 10 500 µA µA ± 100 µA 4 5 V 5 7 Ω Typ. Max. Unit VDS = Max Rating, TC = 125°C Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 30 V , ID = 2 A VDS = 25 V, f = 1 MHz, VGS = 0 VDD = 750 V, ID = 2 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) VDD = 600 V, ID = 4 A, VGS = 10 V (see Figure 19) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/14 Typ. VDS = Max Rating IDSS Table 5. Min. Min. 3.5 S 1300 120 12 pF pF pF 35 30 45 45 ns ns ns ns 30 10 9 50 nC nC nC STP4N150 - STW4N150 Table 6. Symbol Electrical characteristics Source drain diode Parameter ISD ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage trr Qrr IRRM trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions Min. Typ. ISD = 4 A, VGS = 0 ISD = 4 A, di/dt = 100 A/µs VDD = 45V (see Figure 18) ISD = 4 A, di/dt = 100 A/µs VDD = 45V, Tj = 150°C (see Figure 18) Max. Unit 4 12 A A 2 V 510 3 12 ns µC A 615 4 12.6 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/14 Electrical characteristics STP4N150 - STW4N150 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-247 Figure 4. Thermal impedance for TO-247 Figure 5. Output characterisics Figure 6. Transfer characteristics 6/14 STP4N150 - STW4N150 Electrical characteristics Figure 7. Transconductance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 8. Static drain-source on resistance Figure 12. Normalized on resistance vs temperature 7/14 Electrical characteristics Figure 13. Source-drain diode forward characteristics Figure 15. Maximum avalanche energy vs temperature 8/14 STP4N150 - STW4N150 Figure 14. Normalized BVDSS vs temperature STP4N150 - STW4N150 3 Test circuit Package mechanical data Test circuit Package mechanical data Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load switching and diode recovery times 9/14 Package mechanical data 4 STP4N150 - STW4N150 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/14 STP4N150 - STW4N150 Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/14 Package mechanical data STP4N150 - STW4N150 TO-247 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 0.620 0.214 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 12/14 TYP 5.50 0.216 STP4N150 - STW4N150 5 Revision history Revision history Table 7. Revision history Date Revision Changes 29-Mar-2005 1 First release 07-Jul-2005 2 Removed TO-220FP 07-Oct-2005 3 Complete version 10-Aug-2006 4 New template, no content change 13/14 STP4N150 - STW4N150 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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