STFV4N150 N-channel 1500V - 5Ω - 4A - TO-220FH Very high voltage PowerMESH™ Power MOSFET General features Type VDSS RDS(on) ID Pw STFV4N150 1500V <7Ω 4A 40W ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching ■ Fully plastic TO-220 package ■ Creepage distance path is > 4mm 1 2 3 TO-220FH Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. The creepage path is what makes this package unique from TO-220FP. The creepage distance path between each lead and between the leads and the heatsink has been increased to >4.0mm, making this package met all stringent safety norms in high voltage applications. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STFV4N150 FV4N150 TO-220FH Tube March 2007 Rev 4 1/13 www.st.com 13 Contents STFV4N150 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ................................................ 9 STFV4N150 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Drain-source voltage (VGS = 0) 1500 V Drain-gate voltage (RGS = 20 kΩ) 1500 V VGS Gate- source voltage ± 30 V ID (1) Drain current (continuous) at TC = 25°C 4 A ID Drain current (continuous) at TC = 100°C 2.5 A Drain current (pulsed) 12 A Total dissipation at TC = 25°C 40 W Derating factor 0.32 W/°C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; TC=25°C) 2500 V Tj Tstg Operating junction temperature Storage temperature -55 to 150 °C Value Unit VDS VDGR IDM (2) PTOT Parameter 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area Table 2. Thermal resistance Symbol Parameter Rthj-case Thermal resistance junction-case Max 3.12 °C/W Rthj-amb Thermal resistance junction-ambient Max 62.5 °C/W Value Unit 4 A 350 mJ Table 3. Symbol Avalanche data Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50V) 3/13 Electrical characteristics 2 STFV4N150 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol Test conditions ID = 1mA, VGS = 0 IDSS Zero gate voltage Drain current (VGS = 0) VDS = Max rating VDS = Max rating,TC = 125°C IGSS Gate-body leakage current (VDS = 0) VGS = ± 30V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 2A Table 5. Symbol 4/13 Parameter Drain-source breakdown voltage V(BR)DSS 1. On/off states Min. Typ. Max. 1500 3 Unit V 10 500 µA µA ± 100 nA 4 5 V 5 7 Ω Typ. Max. Unit Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS = 30V , ID = 2A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge Min. 3.5 S VDS = 25V, f = 1MHz, VGS = 0 1300 120 12 pF pF pF VDD = 600V, ID = 4A, VGS = 10V (see Figure 15) 30 10 9 Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 50 nC nC nC STFV4N150 Electrical characteristics Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Table 7. Turn-on delay time Rise time Turn-off-delay time Fall time Parameter ISD Source-drain current Source-drain current (pulsed) ISDM VSD (2) trr Qrr IRRM trr Qrr IRRM Min. Typ. Max. Unit 35 30 45 45 VDD = 750V, ID = 2A, RG = 4.7Ω, VGS = 10V (see Figure 14) ns ns ns ns Source drain diode Symbol (1) Test conditions Test conditions Min Typ. Max Unit 4 12 A A 2 V Forward on voltage ISD = 4A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4A, di/dt = 100A/µs VDD = 45V (see Figure 19) 510 3 12 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4A, di/dt = 100A/µs VDD = 45V, Tj = 150°C (see Figure 19) 650 4 12.6 ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 5/13 Electrical characteristics STFV4N150 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/13 STFV4N150 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized BVDSS vs temperature 7/13 Electrical characteristics Figure 13. Maximum avalanche energy vs temperature 8/13 STFV4N150 STFV4N150 3 Test circuit Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform 9/13 Package mechanical data 4 STFV4N150 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STFV4N150 Package mechanical data TO-220FH (Fully plastic High voltage) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.3 1.8 0.051 0.070 F2 1.3 1.8 0.051 0.070 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 16 L3 28.6 30.6 1.126 L4 9.8 10.6 0.385 L5 0.409 0.630 3.4 1.204 0.417 0.134 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 L8 14.5 15 0.570 L9 2.4 0.590 0.094 P011W 11/13 Revision history 5 STFV4N150 Revision history Table 8. 12/13 Revision history Date Revision Changes 07-Jul-2005 1 First Release 06-Jun-2006 2 New template, inerted new value on Absolute maximum ratings 28-Jun-2006 3 The document has been reformatted 06-Mar-2007 4 Typo mistake on page 1 STFV4N150 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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