IRF640T N-channel 200V - 0.15Ω - 15A - TO-220 MESH OVERLAY™ Power MOSFET General features Type VDSS RDS(on) ID IRF640T 200V <0.16Ω 15A ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances 3 1 2 TO-220 Description This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging IRF640T IRF640T TO-220 Tube October 2006 Rev 1 1/12 www.st.com 12 Contents IRF640T Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/12 ................................................ 8 Rev 1 IRF640T 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 200 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 15 A ID Drain current (continuous) at TC=100°C 10 A Drain current (pulsed) 60 A Total dissipation at TC = 25°C 90 W 0.72 W/°C 15 V/ns -55 to 150 °C Value Unit Thermal resistance junction-case max 1.38 °C/W Thermal resistance junction-ambient max 62.5 °C/W Maximum lead temperature for soldering purpose 300 °C Value Unit IDM (1) PTOT Derating factor dv/dt(2) TJ Tstg Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. ISD ≤15A, di/dt ≤300A/µs, VDD =80%V(BR)DSS Table 2. Thermal data Symbol Rthj-case Rthj-a Tl Table 3. Symbol Parameter Avalanche data Parameter IAR Avalanche curent, repetitive or not-repetitive (pulse width limited by Tj Max) 15 A EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) 110 mJ Rev 1 3/12 Electrical characteristics 2 IRF640T Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 1mA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±20V VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS= 10V, ID= 7.5A Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Max. 200 2 Unit V 1 10 µA µA ±100 nA 3 4 V 0.15 0.16 Ω Typ. Max. Unit VDS = Max rating @125°C Dynamic Parameter Test conditions Min. Forward transconductance VDS =8V, ID = 7.5A 12 S Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 800 165 26 pF pF pF 24 4.4 11.6 nC nC nC Total gate charge Gate-source charge Gate-drain charge VDD=160V, ID = 15A VGS =10V (see Figure 14) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/12 Typ. VDS = Max rating, IDSS Table 5. Min. Rev 1 IRF640T Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Table 7. Symbol Switching times Parameter Test conditions Min. VDD=100 V, ID= 7.5A, Turn-on delay time Rise time RG=4.7Ω, VGS=10V (see Figure 13) VDD = 100 V, ID = 7.5A, Turn-off delay time Fall time RG = 4.7Ω, VGS = 10V (see Figure 13) Typ. Max. Unit 11.5 22 ns ns 19 11 ns ns Source drain diode Max Unit Source-drain current 15 A ISDM(1) Source-drain current (pulsed) 60 A VSD(2) Forward on voltage ISD=15A, VGS=0 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD=15A, VDD=50V Reverse recovery time Reverse recovery charge Reverse recovery current ISD=15A, VDD=50V ISD trr Qrr IRRM trr Qrr IRRM Parameter Test conditions di/dt = 100A/µs, (see Figure 18) di/dt = 100A/µs, Tj=150°C (see Figure 18) Min Typ. 125 0.55 8.8 ns µC A 148 0.73 9.9 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Rev 1 5/12 Electrical characteristics IRF640T 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Static drain-source on resistance Figure 6. Normalized BVDSS vs temperature 6/12 Rev 1 IRF640T Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain forward characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Maximum avalanche energy vs temperature Rev 1 7/12 Test circuit 3 IRF640T Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/12 Figure 18. Switching time waveform Rev 1 IRF640T 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com Rev 1 9/12 Package mechanical data IRF640T TO-220 MECHANICAL DATA DIM. mm. MIN. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 10/12 inch TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 Rev 1 IRF640T 5 Revision history Revision history Table 8. Revision history Date Revision 06-Oct-2006 1 Changes First Release Rev 1 11/12 IRF640T Please Read Carefully: Information in this document is provided solely in connection with ST products. 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