STMICROELECTRONICS STP4NK80Z_06

STP4NK80Z - STP4NK80ZFP
STD4NK80Z - STD4NK80Z-1
N-channel 800V - 3Ω - 3A - TO-220/TO-220FP/DPAK/IPAK
Zener - Protected SuperMESH™ MOSFET
General features
■
Type
VDSS
(@Tjmax)
RDS(on)
ID
STP4NK80Z
800 V
< 3.5 Ω
3A
STP4NK80ZFP
800 V
< 3.5 Ω
3A
STD4NK80Z
800 V
< 3.5 Ω
3A
STD4NK80Z-1
800 V
< 3.5 Ω
3A
3
1
TO-220
Extremely high dv/dt capability
2
TO-220FP
3
3
2
1
■
100% avalanche tested
■
Gate charge minimized
■
Very low intrinsic capacitances
■
Very good manufacturing repeatibility
DPAK
1
IPAK
Internal schematic diagram
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STP4NK80Z
P4NK80Z
TO-220
Tube
STP4NK80ZFP
P4NK80ZFP
TO-220FP
Tube
STD4NK80ZT4
D4NK80Z
DPAK
Tape & reel
STD4NK80Z-1
D4NK80Z
IPAK
Tube
August 2006
Rev 8
1/18
www.st.com
18
Contents
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
2
Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
Electrical characteristics (curves)
............................ 7
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
TO-220/DPAK/
IPAK
Unit
TO-220FP
VDS
Drain-source voltage (VGS = 0)
800
V
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
3
3 (1)
A
ID
Drain current (continuous) at TC=100°C
1.89
1.89 (1)
A
IDM(2)
Drain current (pulsed)
12
12 (1)
A
PTOT
Total dissipation at TC = 25°C
80
25
W
0.64
0.21
W/°C
Derating factor
VESD(G-S)
dv/dt (3)
VISO
TJ
Tstg
Gate source ESD
(HBM-C=100pF, R=1.5KΩ)
3000
V
4.5
V/ns
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1s; Tc= 25°C)
-
Operating junction temperature
Storage temperature
2500
-55 to 150
V
°C
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤4A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.
Table 2.
Symbol
Thermal data
Parameter
Rthj-case
Thermal resistance junctioncase max
Rthj-a
Thermal resistance junctionambient max
Tl
Maximum lead temperature for
soldering purpose
Value
TO-220
TO-220FP
1.56
5
62.5
300
Unit
DPAK
IPAK
1.56
°C/W
100
°C/W
°C
3/18
Electrical ratings
Table 3.
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
Avalanche characteristics
Symbol
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Table 4.
Symbol
BVGSO
1.1
Parameter
Value
Unit
3
A
190
mJ
Gate-source zener diode
Parameter
Test conditions
Gate-source breakdown voltage Igs=± 1mA (Open Drain)
Min.
Typ.
30
Max.
Unit
V
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
4/18
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
2
Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,
Tc = 125°C
IGSS
Gate body leakage current
VGS = ± 20V
(VGS = 0)
V(BR)DSS
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 50µA
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 1.5 A
Table 6.
Symbol
Min.
Typ.
Max.
Unit
800
3
V
1
50
µA
µA
±10
µA
3.75
4.5
V
3
3.5
Ω
Typ.
Max.
Unit
Dynamic
Parameter
Test conditions
Min.
gfs (1)
Forward transconductance VDS =15V, ID = 1.5A
2.9
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
575
67
13
pF
pF
pF
Equivalent output
capacitance
VGS=0, VDS =0V to 400V
60
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
VDD=400 V, ID= 1.5 A,
RG=4.7Ω, VGS=10V
(see Figure 18)
13
12
35
32
ns
ns
ns
ns
tr(Voff)
tr
tc
Off-voltage rise time
Fall time
Cross-over time
VDD=640 V, ID= 3 A,
RG=4.7Ω, VGS=10V
(see Figure 16)
18
7.5
25
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=640V, ID = 3 A
VGS =10V
(see Figure 19)
22.5
4.2
11.3
nC
nC
nC
Cosseq(2).
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
5/18
Electrical characteristics
Table 7.
Symbol
ISD
Source drain diode
Parameter
Min
Typ.
Max
Unit
Source-drain current
3
A
Source-drain current (pulsed)
12
A
(2)
Forward on voltage
ISD= 3 A, VGS=0
1.6
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 3 A,
di/dt = 100A/µs,
VDD=80 V, Tj=150°C
(see Figure 20)
trr
Qrr
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
6/18
Test conditions
(1)
ISDM
VSD
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
400
1520
7.6
ns
µC
A
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area for TO220/DPAK/IPAK
Figure 2.
Thermal impedance for TO220/DPAK/IPAK
Figure 3.
Safe operating area for TO-220FP
Figure 4.
Thermal impedance for TO-220FP
Figure 5.
Output characterisics
Figure 6.
Transfer characteristics
7/18
Electrical characteristics
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
Figure 7.
Transconductance
Figure 9.
Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Source-drain diode forward
characteristics
8/18
Figure 8.
Static drain-source on resistance
Figure 12. Normalized BVdss vs temperature
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
Figure 13. Normalized gate threshold voltage
vs temperature
Electrical characteristics
Figure 14. Avalanche energy vs temperature
Figure 15. Normalized on resistance vs
temperature
9/18
Test circuit
3
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
Test circuit
Figure 16. Unclamped Inductive load test
circuit
Figure 17. Unclamped Inductive waveform
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
switching and diode recovery times
10/18
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
11/18
Package mechanical data
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
12/18
TYP
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
Package mechanical data
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
TYP.
4.6
0.173
0.181
MAX.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L7
L3
L6
F2
H
G
G1
F
F1
L7
L2
L5
1 2 3
L4
13/18
Package mechanical data
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
DPAK MECHANICAL DATA
mm.
inch
DIM.
MAX.
MIN.
A
A1
A2
B
b4
MIN.
2.2
0.9
0.03
0.64
5.2
2.4
1.1
0.23
0.9
5.4
0.086
0.035
0.001
0.025
0.204
0.094
0.043
0.009
0.035
0.212
C
C2
D
D1
E
E1
0.45
0.48
6
0.6
0.6
6.2
0.017
0.019
0.236
0.023
0.023
0.244
6.6
0.252
e
e1
H
L
(L1)
L2
L4
R
V2
TYP
5.1
6.4
0.090
4.6
10.1
0.173
0.368
0.039
2.8
0.8
0.181
0.397
0.110
0.031
1
0.023
0.2
0°
0.260
0.185
2.28
0.6
MAX.
0.200
4.7
4.4
9.35
1
TYP.
0.039
0.008
8°
0°
8°
0068772-F
14/18
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
Package mechanical data
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
0.85
B5
0.033
0.3
0.012
B6
0.95
C
0.45
C2
0.48
D
6
E
6.4
6.6
0.037
0.6
0.017
0.023
0.6
0.019
0.023
6.2
0.236
0.244
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
0.047
L2
0.8
1
0.031
0.039
A1
C2
A3
A
C
H
B
B3
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B6
L2
L1
0068771-E
15/18
Packaging mechanical data
5
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
D
16/18
inch
1.5
MIN.
MAX.
12.1
0.476
1.6
0.059 0.063
D1
1.5
E
1.65
1.85
0.065 0.073
0.059
F
7.4
7.6
0.291 0.299
K0
2.55
2.75
0.100 0.108
P0
3.9
4.1
0.153 0.161
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
R
40
W
15.7
1.574
16.3
0.618
0.641
MIN.
330
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
inch
MAX.
MAX.
12.992
0.059
13.2
0.504 0.520
0.795
18.4
0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
6
Revision history
Revision history
Table 8.
Revision history
Date
Revision
Changes
30-Mar-2005
5
Preliminary version
06-Sep-2005
6
Final version
21Jan-2006
7
Inserted ecopack indication
16-Aug-2006
8
New template, no content change
17/18
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
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18/18