STMICROELECTRONICS STQ1NK80ZR-AP

STQ1NK80ZR-AP - STN1NK80Z
STD1NK80Z - STD1NK80Z-1
N-CHANNEL 800V - 13 Ω - 1 A TO-92 /SOT-223/DPAK/IPAK
Zener - Protected SuperMESH™ MOSFET
Table 1: General Features
Figure 1: Package
TYPE
VDSS
RDS(on)
STQ1NK80ZR-AP
STN1NK80Z
STD1NK80Z
STD1NK80Z-1
800 V
800 V
800 V
800 V
< 16
< 16
< 16
< 16
■
■
■
■
■
■
Ω
Ω
Ω
Ω
ID
Pw
0.3 A
0.25A
1.0 A
1.0 A
3W
2.5 W
45 W
45 W
2
TYPICAL RDS(on) = 13Ω
EXTREMELY HIGH dv/dt CAPABILITY
ESD IMPROVED CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
1
TO-92 (Ammopack)
3
3
DPAK
3
SOT-223
2
1
1
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
2
IPAK
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ AC ADAPTORS AND BATTERY CHARGERS
■ SWITH MODE POWER SUPPLIES (SMPS)
Table 2: Order Codes
SALES TYPE
MARKING
PACKAGE
PACKAGING
STQ1NK80ZR-AP
Q1NK80ZR
TO-92
AMMOPAK
STN1NK80Z
N1NK80Z
SOT-223
TAPE & REEL
STD1NK80ZT4
D1NK80Z
DPAK
TAPE & REEL
STD1NK80Z-1
D1NK80Z
IPAK
TUBE
Rev. 3
January 2006
1/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
TO-92
VDS
VDGR
VGS
SOT-223
Unit
DPAK/IPAK
Drain-source Voltage (VGS = 0)
800
V
Drain-gate Voltage (RGS = 20 kΩ)
800
V
Gate- source Voltage
± 30
V
ID
Drain Current (continuous) at TC = 25°C
0.3
0.25
1.0
A
ID
Drain Current (continuous) at TC = 100°C
0.19
0.16
0.63
A
IDM ( )
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
5
Derating Factor
VESD(G-S)
dv/dt (1)
Tj
Tstg
A
3
2.5
45
W
0.025
0.02
0.36
W /°C
Gate source ESD (HBM-C= 100pF, R= 1.5KΩ)
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
1000
V
4.5
V/ns
-55 to 150
°C
( ) Pulse width limited by safe operating area
(1) ISD ≤ 1 A, di/dt ≤ 200 A/µs, VDD ≤ 640
Table 4: Thermal Data
Rthj-case
Rthj-amb(#)
Rthj-lead
Tl
TO-92
SOT-223
DPAK/IPAK
Unit
--
--
2.78
°C/W
120
50
100
°C/W
Thermal Resistance Junction-lead Max
40
--
--
°C/W
Maximum Lead Temperature For Soldering
Purpose
260
--
300
°C
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
(#) When mounted on 1inch² FR-4 BOARD, 2 oz Cu
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
Unit
1
A
50
mJ
Table 6: GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open
Drain)
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Symbol
V(BR)DSS
Parameter
Test Conditions
Min.
Typ.
Max.
800
Unit
Drain-source
Breakdown Voltage
ID = 1 mA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 50 µA
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 0.5 A
13
16
Ω
Typ.
Max.
Unit
3
V
Table 8: Dynamic
Symbol
gfs (1)
Parameter
Test Conditions
Min.
Forward Transconductance
VDS = 15 V, ID = 0.5 A
0.8
S
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
160
26
6.7
pF
pF
pF
Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 640V
9.5
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 400 V, ID = 0.5 A
RG = 4.7Ω VGS = 10 V
(see Figure 21)
8
30
22
55
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 640V, ID = 1.0 A,
VGS = 10V
(see Figure 24)
7.7
1.4
4.5
nC
nC
nC
Ciss
Coss
Crss
Coss eq. (3)
Table 9: Source Drain Diode
Symbol
Parameter
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 1.0 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.0 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 25°C
(see Figure 22)
365
802
4.4
ns
nC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.0 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 150°C
(see Figure 22)
388
802.7
4.6
ns
nC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
Test Conditions
Min.
Typ.
Max.
Unit
1.0
5
A
A
1.6
V
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS
3/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Figure 3: Safe Operating Area for SOT-223
Figure 6: Thermal Impedance for SOT-223
Figure 4: Safe Operating Area for TO-92
Figure 7: Thermal Impedance for TO-92
Figure 5: Safe Operating Area for IPAK-DPAK
Figure 8: Thermal Impedance for DPAK-IPAK
4/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Figure 9: Output Characteristics
Figure 12: Transfer Characteristics
Figure 10: Transconductance
Figure 13: Static Drain-source On Resistance
Figure 11: Gate Charge vs Gate-source Voltage
Figure 14: Capacitance Variations
5/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Figure 15: Normalized Gate Thereshold Voltage vs Temperature
Figure 18: Normalized On Resistance vs Temperature
Figure 16: Source-Drain Diode Forward Characteristics
Figure 19: Normalized BVdss vs Temperature
Figure 17: Avalanche Energy vs Starting Tj
6/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Figure 20: Unclamped Inductive Load Test Circuit
Figure 23: Unclamped Inductive Wafeform
Figure 21: Switching Times Test Circuit For
Resistive Load
Figure 24: Gate Charge Test Circuit
Figure 22: Test Circuit For Inductive Load
Switching and Diode Recovery Times
7/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com
8/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
D
1.5
D1
1.5
E
1.65
MIN.
12.1
0.476
1.6
0.059 0.063
1.85
0.065 0.073
7.4
7.6
0.291 0.299
2.55
2.75
0.100 0.108
P0
3.9
4.1
0.153 0.161
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
40
15.7
MAX.
330
12.992
13.2
0.504 0.520
18.4
0.645 0.724
0.059
0.795
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
0.059
F
R
MIN.
MAX.
K0
W
inch
MAX.
1.574
16.3
0.618
0.641
9/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
TO-92 MECHANICAL DATA
mm.
inch
DIM.
MIN.
MAX.
MIN.
TYP.
MAX.
A
4.32
4.95
0.170
0.194
b
0.36
0.51
0.014
0.020
D
4.45
4.95
0.175
0.194
E
3.30
3.94
0.130
0.155
e
2.41
2.67
0.094
0.105
e1
1.14
1.40
0.044
0.055
L
12.70
15.49
0.50
0.610
R
2.16
2.41
0.085
0.094
S1
0.92
1.52
0.036
0.060
W
0.41
0.56
0.016
0.022
V
10/15
TYP
5°
5°
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
SOT-223 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
inch
MAX.
MIN.
TYP.
1.80
MAX.
0.071
B
0.60
0.70
0.80
0.024
0.027
0.031
B1
2.90
3.00
3.10
0.114
0.118
0.122
c
0.24
0.26
0.32
0.009
0.010
0.013
D
6.30
6.50
6.70
0.248
0.256
0.264
e
2.30
0.090
e1
4.60
0.181
E
3.30
3.50
3.70
0.130
0.138
0.146
H
6.70
7.00
7.30
0.264
0.276
0.287
10o
V
A1
10o
0.02
P008B
11/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
A
2.20
2.40
0.087
TYP.
MAX.
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
L2
0.8
0.398
0.031
L4
0.60
1.00
0.024
0.039
V2
0o
8o
0o
0o
P032P_B
12/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
0.85
B5
0.033
0.3
0.012
B6
0.95
C
0.45
C2
0.48
D
6
E
6.4
6.6
0.037
0.6
0.017
0.023
0.6
0.019
0.023
6.2
0.236
0.244
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
0.047
L2
0.8
1
0.031
0.039
A1
C2
A3
A
C
H
B
B3
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B6
L2
L1
0068771-E
13/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Table 10: Revision History
Date
Revision
08-Jun-2005
06-Sep-2005
16-Jan-2006
1
2
3
14/15
Description of Changes
First Release
Inserted Ecopack indication
Corrected value on Table 3
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2006 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
15/15