STP5NK40Z - STP5NK40ZFP STD5NK40Z - STD5NK40Z-1 N-CHANNEL 400V - 1.47Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE STP5NK40Z STP5NK40ZFP STD5NK40Z STD5NK40Z-1 ■ ■ ■ ■ ■ ■ VDSS RDS(on) 400 400 400 400 < 1.8 < 1.8 < 1.8 < 1.8 V V V V Ω Ω Ω Ω ID 3 3 3 3 A A A A Pw 45 W 20 W 45 W 45 W TYPICAL RDS(on) = 1.47 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 1 TO-220 TO-220FP 3 3 2 1 1 IPAK DPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. 2 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ■ LIGHTING ■ ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP5NK40Z P5NK40Z TO-220 TUBE STP5NK40ZFP P5NK40ZFP TO-220FP TUBE STD5NK40ZT4 D5NK40Z DPAK TAPE & REEL STD5NK40Z-1 D5NK40Z IPAK TUBE February 2003 1/13 STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP5NK40Z VDS VDGR VGS Unit STP5NK40ZFP STD5NK40Z STD5NK40Z-1 Drain-source Voltage (VGS = 0) 400 V Drain-gate Voltage (RGS = 20 kΩ) 400 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 3 3 (*) 3 ID Drain Current (continuous) at TC = 100°C 1.9 1.9 (*) 1.9 A Drain Current (pulsed) 12 12 (*) 12 A Total Dissipation at TC = 25°C 45 20 45 W 0.16 0.36 W/°C IDM () PTOT Derating Factor VESD(G-S) dv/dt (1) 0.36 Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tj Tstg Operating Junction Temperature Storage Temperature - A 2800 V 4.5 V/ns 2500 - V -55 to 150 -55 to 150 °C °C ( ) Pulse width limited by safe operating area (1) ISD ≤3A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Tl TO-220 TO-220FP DPAK 2.77 6.25 2.77 °C/W 100 °C/W 62.5 300 Maximum Lead Temperature For Soldering Purpose °C AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value Unit 3 A 130 mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Min. Typ. Max. Drain-source Breakdown Voltage ID =1 mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 1.5 A V(BR)DSS 400 Unit 3 V 3.75 4.5 V 1.47 1.8 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Test Conditions Min. VDS =15 V, ID = 1.5 A VDS = 25V, f = 1 MHz, VGS = 0 VGS = 0V, VDS = 0V to 400V 2.2 S 305 57 11.5 pF pF pF 44 pF SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 200 V, ID = 1.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 9.2 6 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 320V, ID = 3 A, VGS = 10V 11.7 2.8 5.8 17 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol Parameter Test Conditions Min. td(off) tf Turn-off Delay Time Fall Time VDD = 200 V, ID = 1.5A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 22.5 11 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 320V, ID = 3A, RG = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 8.5 7.5 14.5 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 3 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 3 A, di/dt = 100A/µs VDD = 40V, Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Min. Typ. 145 464 6.4 Max. Unit 3 12 A A 1.6 V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/13 STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 Safe Operating Area For TO-220/DPAK/IPAK Safe Operating Area For TO-220FP Thermal Impedance For TO-220/DPAK/IPAK Thermal Impedance For TO-220FP Output Characteristics Transfer Characteristics 4/13 STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/13 STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 Source-drain Diode Forward Characteristics Maximum Avalanche Energy vs Temperature 6/13 Normalized BVDSS vs Temperature STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/13 STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 8/13 L4 P011C STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. MAX. 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.5 0.045 0.067 F2 1.15 1.5 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 L2 L5 1 2 3 L4 9/13 STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 L4 V2 0.8 0.60 0 o 0.031 1.00 8 o 0.024 0 o 0.039 0o P032P_B 10/13 STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 11/13 STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 12.1 0.476 B1 1.6 MIN. MAX. D 1.5 D1 1.5 0.059 0.063 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 0.059 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 16.3 1.574 0.618 R 40 W 15.7 * on sales type 12/13 0.641 MIN. 330 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 13/13