STMICROELECTRONICS STP2NC70ZFP

STP2NC70Z, STP2NC70ZFP
STD1NC70Z, STD1NC70Z-1
N-CHANNEL 700V - 7.3Ω - 1.4A TO-220/FP/DPAK/IPAK
Zener-Protected PowerMESH™III MOSFET
TYPE
STP2NC70Z
STP2NC70ZFP
STD1NC70Z
STD1NC70Z-1
■
■
■
■
■
VDSS
RDS(on)
700
700
700
700
< 8.5
< 8.5
< 8.5
< 8.5
V
V
V
V
Ω
Ω
Ω
Ω
ID
Pw
1.4 A
1.4 A
1.4 A
1.4 A
50 W
25 W
45 W
45 W
TYPICAL RDS(on) = 7.3 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
3
1
TO-220
2
TO-220FP
3
3
2
1
1
DPAK
IPAK
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications..
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP2NC70Z
P2NC70Z
TO-220
TUBE
STP2NC70ZFP
P2NC70ZFP
TO-220FP
TUBE
STD1NC70ZT4
D1NC70Z
DPAK
TAPE & REEL
STD1NC70Z-1
D1NC70Z
IPAK
TUBE
February 2002
1/13
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP2NC70Z
VDS
VDGR
VGS
Unit
STD1NC70Z
STD1NC70Z-1
STP2NC70ZFP
Drain-source Voltage (VGS = 0)
700
V
Drain-gate Voltage (RGS = 20 kΩ)
700
V
Gate- source Voltage
± 25
V
ID
Drain Current (continuos) at TC = 25°C
1.4
1.4 (*)
1.4
A
ID
Drain Current (continuos) at TC = 100°C
0.9
0.9 (*)
0.9
A
Drain Current (pulsed)
5.6
5.6 (*)
5.6
A
Total Dissipation at TC = 25°C
50
25
45
W
Derating Factor
0.4
0.2
0.36
W/°C
IDM (l)
PTOT
IGS
VESD(G-S)
dv/dt (1)
Gate-source Current (DC)
± 50
mA
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
2000
V
3
V/ns
Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-
2500
-
-65 to 150
-65 to 150
V
°C
°C
(l) Pulse width limited by safe operating area
(1) I SD ≤10A, di/dt ≤200A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case Max
TO-220
TO-220FP
DPAK
IPAK
2.5
5
2.75
°C/W
Rthj-pcb
Thermal Resistance Junction-pcb Max (for SMD) (#)
100
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
100
°C/W
Maximum Lead Temperature For Soldering Purpose
300
275
°C
Tl
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
1.4
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
60
mJ
GATE-SOURCE ZENER DIODE
Symbol
BVGSO
αT
Parameter
Test Conditions
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
Voltage Thermal Coefficient
T=25°C Note(3)
Min.
Typ.
25
Max.
Unit
V
1.3
10-4/°C
Note: 3. ∆VBV = αT (25°-T) BVGSO(25°)
(#) When mounted on minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
2/13
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
4
5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 0.7 A
7.3
8.5
Ω
Typ.
Max.
Unit
V(BR)DSS
700
Unit
3
V
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Coss eq. (3)
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Test Conditions
Min.
VDS = 15 V, ID = 0.7 A
VDS = 25V, f = 1 MHz, VGS = 0
VGS = 0V, VDS = 0V to 560V
1.2
S
305
34
3.6
pF
pF
pF
28
pF
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 350 V, ID = 0.8 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
11
8
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 560V, ID = 1.6 A,
VGS = 10V
8
2
3.8
12
nC
nC
nC
Typ.
Max.
Unit
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 350 V, ID = 0.8 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
27
30
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 560V, ID = 1.6 A,
RG = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
20
5
25
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 1.4 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.6 A, di/dt = 100A/µs
VDD = 30V, Tj = 150°C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Test Conditions
Min.
Typ.
370
1.3
6.8
Max.
Unit
1.4
5.6
A
A
1.6
V
ns
µC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS .
3/13
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
Safe Operating Area For TO-220
Thermal Impedance For TO-220
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220FP
Safe Operating Area For DPAK/IPAK
Thermal Impedance For DPAK/IPAK
4/13
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/13
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
6/13
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/13
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L4
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
8/13
L4
P011C
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
TO-220FP MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F2
H
G
G1
¯
F
F1
L7
1 2 3
L2
L4
9/13
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
2.4
0.086
MAX.
0.094
0.043
A
2.2
A1
0.9
1.1
0.035
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
L2
0.8
0.047
1
0.031
0.039
A1
C2
A3
A
C
H
B
B3
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B6
L2
L1
0068771-E
10/13
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
0.8
0.031
L4
0.60
1.00
0.024
0.039
V2
0o
8o
0o
0o
P032P_B
11/13
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
DIM.
mm
inch
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
12.1
0.476
B1
1.6
MIN.
MAX.
D
1.5
D1
1.5
0.059 0.063
E
1.65
1.85
0.065 0.073
F
7.4
7.6
0.291 0.299
0.059
K0
2.55
2.75
0.100 0.108
P0
3.9
4.1
0.153 0.161
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
16.3
1.574
0.618
R
40
W
15.7
* on sales type
12/13
0.641
MIN.
330
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
inch
MAX.
MAX.
12.992
0.059
13.2
0.504 0.520
0.795
18.4
0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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13/13