STP2NC70Z, STP2NC70ZFP STD1NC70Z, STD1NC70Z-1 N-CHANNEL 700V - 7.3Ω - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH™III MOSFET TYPE STP2NC70Z STP2NC70ZFP STD1NC70Z STD1NC70Z-1 ■ ■ ■ ■ ■ VDSS RDS(on) 700 700 700 700 < 8.5 < 8.5 < 8.5 < 8.5 V V V V Ω Ω Ω Ω ID Pw 1.4 A 1.4 A 1.4 A 1.4 A 50 W 25 W 45 W 45 W TYPICAL RDS(on) = 7.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES 3 1 TO-220 2 TO-220FP 3 3 2 1 1 DPAK IPAK DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.. APPLICATIONS ■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION ■ WELDING EQUIPMENT ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP2NC70Z P2NC70Z TO-220 TUBE STP2NC70ZFP P2NC70ZFP TO-220FP TUBE STD1NC70ZT4 D1NC70Z DPAK TAPE & REEL STD1NC70Z-1 D1NC70Z IPAK TUBE February 2002 1/13 STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP2NC70Z VDS VDGR VGS Unit STD1NC70Z STD1NC70Z-1 STP2NC70ZFP Drain-source Voltage (VGS = 0) 700 V Drain-gate Voltage (RGS = 20 kΩ) 700 V Gate- source Voltage ± 25 V ID Drain Current (continuos) at TC = 25°C 1.4 1.4 (*) 1.4 A ID Drain Current (continuos) at TC = 100°C 0.9 0.9 (*) 0.9 A Drain Current (pulsed) 5.6 5.6 (*) 5.6 A Total Dissipation at TC = 25°C 50 25 45 W Derating Factor 0.4 0.2 0.36 W/°C IDM (l) PTOT IGS VESD(G-S) dv/dt (1) Gate-source Current (DC) ± 50 mA Gate source ESD(HBM-C=100pF, R=1.5KΩ) 2000 V 3 V/ns Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tj Tstg Operating Junction Temperature Storage Temperature - 2500 - -65 to 150 -65 to 150 V °C °C (l) Pulse width limited by safe operating area (1) I SD ≤10A, di/dt ≤200A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. (*) Limited only by maximum temperature allowed THERMAL DATA Rthj-case Thermal Resistance Junction-case Max TO-220 TO-220FP DPAK IPAK 2.5 5 2.75 °C/W Rthj-pcb Thermal Resistance Junction-pcb Max (for SMD) (#) 100 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W Maximum Lead Temperature For Soldering Purpose 300 275 °C Tl AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 1.4 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 60 mJ GATE-SOURCE ZENER DIODE Symbol BVGSO αT Parameter Test Conditions Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) Voltage Thermal Coefficient T=25°C Note(3) Min. Typ. 25 Max. Unit V 1.3 10-4/°C Note: 3. ∆VBV = αT (25°-T) BVGSO(25°) (#) When mounted on minimum Footprint PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Min. Typ. Max. Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 4 5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 0.7 A 7.3 8.5 Ω Typ. Max. Unit V(BR)DSS 700 Unit 3 V DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Test Conditions Min. VDS = 15 V, ID = 0.7 A VDS = 25V, f = 1 MHz, VGS = 0 VGS = 0V, VDS = 0V to 560V 1.2 S 305 34 3.6 pF pF pF 28 pF SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 350 V, ID = 0.8 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 11 8 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 560V, ID = 1.6 A, VGS = 10V 8 2 3.8 12 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol Parameter Test Conditions Min. td(off) tf Turn-off Delay Time Fall Time VDD = 350 V, ID = 0.8 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 27 30 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 560V, ID = 1.6 A, RG = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 20 5 25 ns ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 1.4 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.6 A, di/dt = 100A/µs VDD = 30V, Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. 370 1.3 6.8 Max. Unit 1.4 5.6 A A 1.6 V ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS . 3/13 STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1 Safe Operating Area For TO-220 Thermal Impedance For TO-220 Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP Safe Operating Area For DPAK/IPAK Thermal Impedance For DPAK/IPAK 4/13 STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 5/13 STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1 Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature 6/13 STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/13 STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 8/13 L4 P011C STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1 TO-220FP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 L4 9/13 STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. 2.4 0.086 MAX. 0.094 0.043 A 2.2 A1 0.9 1.1 0.035 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 10/13 STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 11/13 STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 12.1 0.476 B1 1.6 MIN. MAX. D 1.5 D1 1.5 0.059 0.063 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 0.059 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 16.3 1.574 0.618 R 40 W 15.7 * on sales type 12/13 0.641 MIN. 330 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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