STSJ60NH3LL N-channel 30V - 0.004Ω - 15A - PowerSO-8™ STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STSJ60NH3LL 30V <0.0057Ω 15A (2) ■ Optimal RDS(on) x Qg trade-off @ 4.5 V ■ Conduction losses reduced ■ Improved junction-case thermal resistance ■ Low threshold device PowerSO-8™ Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced. The exposed slug reduces the Rthj-c improving the current capability. Internal schematic diagram Applications ■ Switching application DRAIN CONTACT ALSO ON THE BACKSIDE Order codes Part number Marking Package Packaging STSJ60NH3LL 60H3LL- PowerSO-8™ Tape & reel April 2006 Rev 1 1/12 www.st.com 12 Contents STSJ60NH3LL Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STSJ60NH3LL 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit 30 V ± 16 V Drain current (continuous) at TC = 25°C 60 A ID Drain current (continuous) at TC = 100°C 37.5 A ID(2) Drain current (continuous) at TC = 25°C 15 A ID Drain current (continuous) at TC = 100°C 9.4 A Drain current (pulsed) 60 A Ptot (1) Total dissipation at T C = 25°C 50 W (2) Total dissipation at T C = 25°C 3 W -55 to 150 °C Value Unit VDS Drain-source voltage (VGS = 0) VGS Gate- source voltage ID (1) IDM Ptot (3) Tstg Tj Storage temperature Operating junction temperature 1. This value is rated according to Rthj-c 2. This value is rated according to Rthj-pcb 3. Pulse width limited by safe operating area Table 2. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case (drain) Max 2.5 °C/W Rthj-amb Thermal resistance junction-ambient Max 42 °C/W 3/12 Electrical characteristics 2 STSJ60NH3LL Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol Parameter Test condictions Drain-source breakdown voltage ID = 250 µA, VGS = 0 Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating @125°C Gate-body leakage current (VDS = 0) VGS = ± 16V VGS(th) Gate threshold voltage VDS = V GS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 7.5A VGS = 4.5V, ID = 7.5A V(BR)DSS IDSS IGSS Table 4. Symbol Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA 1 V 0.004 0.005 0.0057 0.0075 Typ. Max. Ω Ω Dynamic Parameter Test condictions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS=25V, f=1MHz, VGS = 0 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=15V, ID=15A VGS=4.5V (see Figure 13) Gate input resistance f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain RG 4/12 On/off states Min. 1810 565 41 0.5 Unit pF pF pF 18 4.8 5.3 24 nC nC nC 1.5 3 Ω STSJ60NH3LL Electrical characteristics Table 5. Symbol Switching times Parameter Test condictions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise Time VDD = 15V, ID = 7.5A RG = 4.7Ω , VGS = 10V (see Figure 12) 8 65 ns ns td(off) tf Turn-off delay time Fall time VDD = 15V, ID = 7.5A RG = 4.7Ω , VGS = 10V (see Figure 12) 38 20 ns ns Table 6. Symbol ISD ISDM VSD (1) trr Qrr IRRM Source drain diode Parameter Test condictions Min Typ. Source-drain current Source-drain current (pulsed) Forward On Voltage ISD = 15A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 15A, di/dt = 100A/µs VDD = 15V, T j = 25°C (see Figure 17) 22 32 1.9 Max Unit 15 60 A A 1.3 V ns nC A 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/12 Electrical characteristics STSJ60NH3LL 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Normalized BVDSS vs temperature Figure 6. Static drain-source on resistance 6/12 STSJ60NH3LL Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/12 Test circuit 3 STSJ60NH3LL Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/12 Figure 17. Switching time waveform STSJ60NH3LL 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STSJ60NH3LL PowerSO-8™ MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. TYP. 1.75 0.1 MAX. 0.068 0.25 a2 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 0.196 c1 45° (typ.) D 4.8 5.0 0.188 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 e4 2.79 0.110 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 10/12 MIN. 0.6 0.023 8° (max.) STSJ60NH3LL 5 Revision history Revision history Table 7. Revision history Date Revision 12-Apr-2006 1 Changes First release 11/12 STSJ60NH3LL Please Read Carefully: Information in this document is provided solely in connection with ST products. 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