STL17N3LLH6 N-channel 30 V, 0.0038 Ω, 17 A PowerFLAT™(3.3x3.3) STripFET™ VI DeepGATE™ Power MOSFET Features Order code VDSS RDS(on) max. ID STL17N3LLH6 30 V 0.0045 Ω 17 A (1) 1. The value is rated according Rthj-pcb ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge PowerFLAT™ (3.3 x 3.3) Application Figure 1. Switching applications Pin-out configuration 1 2 3 4 S S S G Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding DC-DC converter applications, where high power density has to be achieved. D D D D 8 7 6 5 BOTTOM VIEW Table 1. Device summary Order code Marking Package Packaging STL17N3LLH6 17N3L PowerFLAT™ (3.3 x 3.3) Tape and reel November 2010 Doc ID 15535 Rev 3 1/13 www.st.com 13 Contents STL17N3LLH6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 Doc ID 15535 Rev 3 STL17N3LLH6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 30 V ± 20 V Drain current (continuous) at TC = 25 °C 17 A Drain current (continuous) at TC = 100 °C 11 A VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID (1) ID (1) (2) Drain current (pulsed) 68 A PTOT (3) Total dissipation at TC = 25 °C 50 W PTOT (1) Total dissipation at TC = 25 °C 2 W 0.03 W/°C -55 to 150 °C IDM Derating factor TJ Operating junction temperature Storage temperature Tstg 1. The value is rated according Rthj-pcb 2. Pulse width limited by safe operating area 3. The value is rated according Rthj-c Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case (drain) (steady state) 2.5 °C/W (1) Thermal resistance junction-pcb 42.8 °C/W Rthj-pcb(2) Thermal resistance junction-pcb 63.5 °C/W Rthj-pcb 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec 2. Steady state Doc ID 15535 Rev 3 3/13 Electrical characteristics 2 STL17N3LLH6 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol Parameter Test conditions Drain-source breakdown voltage ID = 250 µA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125 °C IGSS Gate body leakage current (VDS = 0) VGS = ±20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 8.5 A VGS = 4.5 V, ID = 8.5 A V(BR)DSS Table 5. Symbol Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA 1 V Ω Ω 0.0038 0.0057 0.0045 0.0073 Min. Typ. Max. Unit - pF pF pF Dynamic Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f=1 MHz, VGS=0 - 1690 290 176 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 15 V, ID = 17 A VGS = 4.5 V (see Figure 14) - 17 8 6 - nC nC nC Gate input resistance f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain - 1.7 - Ω RG Table 6. Switching times Symbol Parameter td(on) tr td(off) tf 4/13 On/off states Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD= 15V, ID = 8.5A, RG = 4.7Ω, VGS = 10V (see Figure 13) Doc ID 15535 Rev 3 Min. Typ. - 9.5 30 37 12 Max. Unit - ns ns ns ns STL17N3LLH6 Electrical characteristics Table 7. Symbol ISD Source drain diode Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 17 A ISDM(1) Source-drain current (pulsed) - 68 A VSD(2) Forward on voltage ISD = 17 A, VGS = 0 - 1.1 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17 A, di/dt = 100 A/µs, VDD= 25 V - trr Qrr IRRM 24 16.8 1.4 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 15535 Rev 3 5/13 Electrical characteristics STL17N3LLH6 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Thermal impedance AM08217v1 ID (A) 100 Figure 3. Zth_powerflat_3.3x3.3 K δ=0.5 Tj=150°C Tc=25°C Single pulse a is are n) this DS(o n in ax R tio m era d by p O ite Lim 0.2 0.1 -1 10 0.05 10 10ms 0.02 1 100ms 1s -2 0.01 10 0.1 Single pulse -3 0.01 0.1 Figure 4. 10 1 10 -3 10 VDS(V) Output characteristics Figure 5. AM08218v1 ID (A) VGS=10V -2 0 -1 10 2 1 10 10 tp (s) 10 10 Transfer characteristics AM08219v1 ID (A) 6V 250 200 5V 200 150 150 4V 100 100 50 50 3V 0 0 Figure 6. 1 2 3 4 5 Normalized BVDSS vs temperature AM08220v1 BVDSS (norm) 1.06 1.04 0 0 VDS(V) Figure 7. 1 2 3 4 VGS(V) 5 Static drain-source on resistance AM08221v1 RDS(on) (Ω) 4.8 ID=1mA VGS=10V 4.6 1.02 1.00 4.4 0.98 4.2 0.96 4.0 0.94 0.92 -50 -25 6/13 0 25 50 75 100 125 TJ(°C) 3.8 0 Doc ID 15535 Rev 3 5 10 15 20 25 30 35 ID(A) STL17N3LLH6 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM08222v1 VGS (V) VDD=15V ID=17A 12 Capacitance variations AM08223v1 C (pF) 2500 10 2000 Ciss 8 1500 6 1000 4 Coss 500 2 0 0 20 10 30 40 0 0 50 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature AM08224v1 VGS(th) (norm) Crss 20 10 VDS(V) Figure 11. Normalized on resistance vs temperature AM08225v1 RDS(on) (norm) 1.8 1.2 1.6 1.4 1.0 1.2 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 -50 -25 0.2 0 -50 -25 0 25 50 75 100 TJ(°C) 0 25 50 75 100 TJ(°C) Figure 12. Source-drain diode forward characteristics AM08226v1 VSD (V) TJ=-55°C 1.0 0.9 0.8 TJ=25°C 0.7 0.6 TJ=150°C 0.5 0.4 0 10 20 30 40 50 60 70 ISD(A) Doc ID 15535 Rev 3 7/13 Test circuits 3 STL17N3LLH6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/13 0 Doc ID 15535 Rev 3 10% AM01473v1 STL17N3LLH6 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 8. Package dimensions mm. Dim. A Min. Typ Max. 0.80 0.90 1.00 0.02 0.05 0.30 0.35 A1 b 0.25 D D2 3.30 2.50 2.65 e 0.65 E 3.30 2.75 E2 1.76 1.91 2.01 L 0.30 0.40 0.50 Doc ID 15535 Rev 3 9/13 Package mechanical data STL17N3LLH6 Figure 19. Package drawing 10/13 Doc ID 15535 Rev 3 STL17N3LLH6 Package mechanical data Figure 20. Recommended footprint (dimensions in mm) AM03834v1 Doc ID 15535 Rev 3 11/13 Revision history 5 STL17N3LLH6 Revision history Table 9. 12/13 Document revision history Date Revision Changes 24-Mar-2009 1 First release. 06-Jul-2010 2 Updated Table 4: On/off states. 10-Nov-2010 3 Document status promoted from preliminary data to datasheet. Doc ID 15535 Rev 3 STL17N3LLH6 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 15535 Rev 3 13/13