STSJ100NHS3LL N-channel 30V - 0.0032Ω - 20A - PowerSO-8™ STripFET™III Power MOSFET plus monolithic schottky General features Type VDSS RDS(on) ID STSJ100NHS3LL 30V 0.0042Ω 20A(1) 1. This value is rated accordingly to Rthj-pcb ■ Optimal RDS(on) x Qg trade-off @ 4.5V ■ Reduced switching losses ■ Reduced conduction losses ■ Improved junction-case thermal resistance PowerSO-8 Description This product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology and a propriertary process for integrating a monolithic scottky diode. The new Power MOSFET is optimized for the most demanding synchronous switch function in DC-DC converter for Computer and Telecom. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STSJ100NHS3LL 100HS3L- PowerSO-8 Tape & reel July 2006 Rev 3 1/12 www.st.com 12 Contents STSJ100NHS3LL Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.1 Electrical characteristics (curves) ............................. 8 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 STSJ100NHS3LL 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate-source voltage ±16 V ID(1) Drain current (continuous) at TC = 25°C 20 A ID (2) Drain current (continuous) at TC=25°C 100 A ID Drain current (continuous) at TC=100°C 12.6 A 80 A Total dissipation at TC = Total dissipation at TC = 25°C(1) 70 3 W W Operating junction temperature Storage temperature -55 to 150 °C IDM (3) Drain current (pulsed) 25°C(2) PTOT TJ Tstg 1. This value is rated accordingly to Rthj-pcb 2. This value is rated according to Rthj-c 3. Pulse width limited by safe operating area Table 2. Thermal data Symbol Rthj-c Rthj-pcb (1) Parameter Value Unit Thermal resistance junction-case max 1.8 °C/W Thermal resistance junction-pcb max 42 °C/W Value Unit 1. When mounted on 1 inch² FR-4 board, 2oz Cu (t<10sec.) Table 3. Symbol Avalanche data Parameter IAV Avalanche current, not repetitive (pulse width limited by Tjmax) 10 A EAS Single pulse avalanche energy (starting Tj=25°C, ID=IAV, VDD=24V) 1.8 J 3/12 Electrical characteristics 2 STSJ100NHS3LL Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Typ. Max. Unit Drain-source breakdown voltage ID = 1mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 24V 500 µA IGSS Gate body leakage current (VDS = 0) VGS = ±16V ±100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 1mA 2.5 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 10A RDS(on) Static drain-source on resistance VGS= 10V, ID= 10A @125°C V(BR)DSS Table 5. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd 30 V 1 VGS= 4.5V, ID= 10A VGS= 4.5V, ID= 10A @125°C 0.0032 0.0042 0.004 0.0057 Ω Ω 0.005 0.006 Ω Ω Dynamic Parameter Test conditions Forward transconductance VDS =10V, ID = 15A Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1MHz, VGS=0 Total gate charge Gate-source charge Gate-drain charge VDD= 15V, ID = 20A VGS = 4.5V, (see Figure 13) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/12 Min. Min. Typ. Max. Unit 44 S 4200 700 46.2 pF pF pF 27 8.5 7.2 35 nC nC nC STSJ100NHS3LL Electrical characteristics Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Table 7. Symbol Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=15V, ID=10A, RG=4.7Ω, VGS=4.5V (see Figure 12) VDD=15V, ID=10A, RG=4.7Ω, VGS=4.5V (see Figure 12) Parameter Test conditions ISDM(1) VSD(2) Forward on voltage ISD=5A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=20A, di/dt = 100A/µs, VDD=25V, Tj=150°C trr Qrr IRRM Typ. Max. Unit 16 45 ns ns 68 8 ns ns Source drain diode Source-drain current Source-drain current (pulsed) ISD Min. (see Figure 17) Min. Typ. 30 30 2 Max. Unit 20 80 A A 0.75 V ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/12 Electrical characteristics STSJ100NHS3LL 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Normalized BVDSS vs temperature Figure 6. Static drain-source on resistance 6/12 STSJ100NHS3LL Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/12 Test circuit 3 STSJ100NHS3LL Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/12 Figure 17. Switching time waveform STSJ100NHS3LL 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 9/12 Package mechanical data STSJ100NHS3LL PowerSO-8™ MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. TYP. 1.75 0.1 MAX. 0.068 0.25 a2 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 0.196 c1 45° (typ.) D 4.8 5.0 0.188 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 e4 2.79 0.110 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 10/12 MIN. 0.6 0.023 8° (max.) STSJ100NHS3LL 5 Revision history Revision history Table 8. Revision history Date Revision Changes 13-Jan-2006 1 Initial release. 24-Jan-2006 2 Changed unit on Table 7: Source drain diode 18-Jul-2006 3 Complete version 11/12 STSJ100NHS3LL Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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