STD40N2LH5 STU40N2LH5 N-channel 25 V, 0.01 Ω, 40 A, DPAK, IPAK STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID STD40N2LH5 25 V 0.0118 Ω 40 A STU40N2LH5 25 V 0.0124 Ω 40 A ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses 3 3 2 1 1 DPAK IPAK Application ■ Switching applications Figure 1. Internal schematic diagram Description This STripFET™ V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low onstate resistance providing also one of the best-inclass figure of merit (FOM). Table 1. Device summary Order codes Marking Package Packaging STD40N2LH5 40N2LH5 DPAK Tape and reel STU40N2LH5 40N2LH5 IPAK Tube September 2009 Doc ID 14919 Rev 3 1/15 www.st.com 15 Contents STD40N2LH5, STU40N2LH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 .............................................. 8 Doc ID 14919 Rev 3 STD40N2LH5, STU40N2LH5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS=0) VGS Gate-Source voltage Value Unit 25 V ± 22 V ID Drain current (continuous) at TC = 25 °C 40 A ID Drain current (continuous) at TC = 100 °C 28 A Drain current (pulsed) 160 A Total dissipation at TC = 25 °C 35 W Derating factor 0.23 W/°C EAS (2) Single pulse avalanche energy 110 mJ Tj Tstg Operating junction temperature Storage temperature -55 to 175 °C IDM (1) PTOT 1. Pulse width limited by safe operating area 2. Starting Tj = 25 °C, ID = 24 A, VDD = 12 V Table 3. Symbol Thermal resistance Parameter Value Unit Rthj-case Thermal resistance junction-case max 4.3 °C/W Rthj-amb Thermal resistance junction-case max 100 °C/W Maximum lead temperature for soldering purpose 275 °C Tl Doc ID 14919 Rev 3 3/15 Electrical characteristics 2 STD40N2LH5, STU40N2LH5 Electrical characteristics (TCASE = 25°C unless otherwise specified) Table 4. Symbol Static Parameter Test conditions Drain-source breakdown voltage ID = 250 µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 25 V VDS = 25 V, TC = 125 °C IGSS Gate body leakage current (VDS = 0) VGS = ± 22 V Gate threshold voltage VDS= VGS, ID = 250 µA V(BR)DSS VGS(th) Min. Table 5. Symbol V 1 10 µA µA ±100 nA 1 V Ω VGS= 10 V, ID= 20 A 0.0106 0.0124 Ω VGS= 5 V, ID= 20 A SMD version 0.0135 0.0155 Ω VGS= 5 V, ID= 20 A 0.0141 0.0161 Ω 0.01 Dynamic Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge Symbol Unit 0.0118 Parameter Table 6. 4/15 Static drain-source on resistance Max. 25 VGS= 10 V, ID= 20 A SMD version RDS(on) Typ. Min. Typ. Max. Unit VDS = 20 V, f=1 MHz, VGS = 0 - 700 160 27 - pF pF pF VDD=15 V, ID = 40 A VGS = 5 V (Figure 14) - 6.3 2.4 2.7 - nC nC nC Test conditions Min. Typ. Max. Unit Switching on/off (resistive load) Parameter td(on) tr Turn-on delay time Rise time VDD= 10 V, ID= 20 A, RG= 4.7 Ω, VGS= 10 V (Figure 13 and Figure 18) - 4.8 13.6 - ns ns td(off) tf Turn-off delay time Fall time VDD= 10 V, ID= 20 A, RG= 4.7 Ω, VGS= 10 V (Figure 13 and Figure 18) - 17.6 3.5 - ns ns Doc ID 14919 Rev 3 STD40N2LH5, STU40N2LH5 Table 7. Electrical characteristics Source drain diode Symbol Parameter ISD ISDM Source-drain current Source-drain current (pulsed)(1) VSD Forward on voltage trr Qrr Reverse recovery time Reverse recovery charge Reverse recovery current IRRM Test conditions Min. Typ. Max. Unit - 40 160 A A ISD= 20 A, VGS=0 - 1.1 V ISD= 40 A, di/dt =100 A/µs, VDD= 20 V, Tj = 25 °C (Figure 15) - 17.6 9.2 1 ns nC A 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Doc ID 14919 Rev 3 5/15 Electrical characteristics STD40N2LH5, STU40N2LH5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM05425v1 10 D S( on ) 100 O Li per m at ite io d ni by n m this ax a R rea is ID (A) 100µs 1ms 10ms Tj=150°C Tc=25°C 1 Sinlge pulse 0.1 0.1 Figure 4. 10 1 100 VDS(V) Output characteristics AM05426v1 ID (A) VGS=10V 120 AM05427v1 ID (A) 100 100 VDS=3V 80 5V 80 60 60 4V 40 40 20 20 3V 0 0 Figure 6. 1 2 3 4 Normalized BVDSS vs temperature AM05429v1 BVDSS (norm) 0 0 VDS(V) Figure 7. 2 4 8 10 VGS(V) Static drain-source on resistance AM05428v1 RDS(on) (mΩ) ID=20A VGS=10V 14.0 1.10 6 12.0 10.0 1.05 8.0 1.00 6.0 4.0 0.95 2.0 0.90 -50 -25 6/15 0 25 50 75 100 125 150 TJ(°C) Doc ID 14919 Rev 3 0.0 0 10 20 30 40 ID(A) STD40N2LH5, STU40N2LH5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM05430v1 VGS (V) Capacitance variations AM05431v1 C (pF) VDD=12.5V ID=40A 12 10 1000 Ciss 8 6 Coss 100 4 Crss 2 10 0 2 0 4 6 8 10 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature AM05432v1 VGS(th) (norm) 1.2 1.1 5 10 15 20 VDS(V) Figure 11. Normalized on resistance vs temperature AM05433v1 RDS(on) (norm) 1.9 1.7 1.0 1.5 0.9 1.3 0.8 1.1 0.7 0.6 0.9 0.5 0.7 0.4 -50 -25 0 25 50 75 100 125 150 TJ(°C) 0.5 -50 -25 0 25 50 75 100 125 150 TJ(°C) Figure 12. Source-drain diode forward characteristics AM05434v1 VSD (V) TJ=-55°C 1.1 1.0 0.9 0.8 0.7 TJ=25°C TJ=150°C 0.6 0.5 0.4 0 5 10 15 20 25 30 35 40 ISD(A) Doc ID 14919 Rev 3 7/15 Test circuits 3 STD40N2LH5, STU40N2LH5 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/15 0 Doc ID 14919 Rev 3 10% AM01473v1 STD40N2LH5, STU40N2LH5 Test circuits Figure 19. Gate charge waveform Doc ID 14919 Rev 3 9/15 Package mechanical data 4 STD40N2LH5, STU40N2LH5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/15 Doc ID 14919 Rev 3 STD40N2LH5, STU40N2LH5 Package mechanical data TO-251 (IPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 H 16.10 L 9.00 9.40 (L1) 0.80 1.20 L2 0.80 V1 10 o 0068771_H Doc ID 14919 Rev 3 11/15 Package mechanical data STD40N2LH5, STU40N2LH5 TO-252 (DPAK) mechanical data DIM. mm. min. ty p ma x . A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4. 70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G 12/15 Doc ID 14919 Rev 3 STD40N2LH5, STU40N2LH5 5 Packaging mechanical data Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. inch MAX. MIN. A0 6.8 7 0.267 0.275 10.4 10.6 0.409 0.417 12.1 0.476 1.6 0.059 0.063 D 1.5 D1 1.5 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 MAX. B0 B1 inch 0.059 1.574 16.3 0.618 0.641 Doc ID 14919 Rev 3 13/15 Revision history 6 STD40N2LH5, STU40N2LH5 Revision history Table 8. 14/15 Document revision history Date Revision Changes 24-Jul-2008 1 Initial release 23-Sep-2008 2 VGS value has been changed on Table 2 and Table 5 10-Sep-2009 3 Document status promoted from preliminary data to datasheet. Doc ID 14919 Rev 3 STD40N2LH5, STU40N2LH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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