STD55N4F5 N-channel 40 V, 7.3 mΩ, 40 A, DPAK STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID Pw STD55N4F5 40 V < 8.5 mΩ 55 A 60 W ■ Standard threshold drive ■ 100% avalanche tested ■ Surface mounting DPAK (TO-252) 3 1 DPAK Applications ■ Switching applications – Automotive Description Figure 1. Internal schematic diagram The STD55N4F5 is a N-channel STripFETTM V. This Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). $4!"OR ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STD55N4F5 55N4F5 DPAK Tape and reel June 2010 Doc ID 15661 Rev 3 1/13 www.st.com 13 Contents STD55N4F5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 Doc ID 15661 Rev 3 STD55N4F5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 40 V ± 20 V Drain current (continuous) at TC = 25 °C 55 A Drain current (continuous) at TC = 100 °C 39 A Drain current (pulsed) 220 A Total dissipation at TC = 25 °C 60 W Derating factor 0.4 W/°C Peak diode recovery voltage slope 15 V/ns Single pulse avalanche energy 100 mJ Operating junction temperature Storage temperature - 55 to 175 °C Value Unit Thermal resistance junction-case max 2.5 °C/W Thermal resistance junction-ambient max 50 °C/W VDS Drain-source voltage (VGS=0) VGS Gate-source voltage ID (1) ID IDM (2) PTOT dv/dt (3) EAS (4) Tj Tstg 1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD ≤ 55 A, di/dt ≤ 400 A/µs, VDS ≤ V(BR)DSS, Tj ≤ Tjmax 4. Starting TJ = 25 °C, ID = 27.5 A, VDD = 25 V Table 3. Symbol Rthj-case Rthj-pcb (1) Thermal resistance Parameter 1. When mounted on 1inch² FR-4 2Oz Cu board Doc ID 15661 Rev 3 3/13 Electrical characteristics 2 STD55N4F5 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 250 µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,Tc = 125 °C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20 V 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 4 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 27.5 A 8.5 mΩ V(BR)DSS Table 5. 4/13 Static 40 V 2 7.3 Dynamic Symbol Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=20 V, ID = 27.5 A VGS =10 V Figure 14 Doc ID 15661 Rev 3 Min Typ. Max. Unit - 1600 230 30 - 25 7 6 - pF pF pF - nC nC nC STD55N4F5 Electrical characteristics Table 6. Symbol Switching on/off (resistive load) Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=20 V, ID= 27.5 A, RG=4.7 Ω, VGS=10 V Figure 16 - 15 15 - ns ns td(off) tf Turn-off delay time Fall time VDD=20 V, ID= 27.5 A, RG=4.7 Ω, VGS=10 V Figure 16 - 25 6 - ns ns Min. Typ. Max. Unit - 55 220 A A - 1.5 V Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Source drain diode Parameter Test conditions Source-drain current Source-drain current (pulsed) Forward on voltage ISD=55 A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=55 A, di/dt = 100 A/µs, VDD= 32 V, Tj=150 °C Figure 15 - 40 55 3 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 15661 Rev 3 5/13 Electrical characteristics STD55N4F5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM07070v1 AM07069v1 ID (A) K δ=0.5 is rea s a S(on) i h t D in x R a ion rat by m e Op ited Lim 100 10 0.2 100µs 0.1 1ms 10ms -1 10 0.05 1 0.02 Tj=175°C Tc=25°C 0.1 0.01 Single pulse Figure 4. Single pulse -2 0.01 0.1 10 1 10 -5 10 VDS(V) Output characteristics Figure 5. -4 -3 10 10 -2 -1 10 0 10 tp (s) 10 Transfer characteristics AM07071v1 ID (A) 180 VDS=5V 180 VGS=10V 160 160 6V 140 120 140 120 100 100 80 5V 80 60 60 40 40 20 4V 0 0 Figure 6. AM07072v1 ID(A) 1 2 3 4 0 0 VDS(V) Normalized BVDSS vs temperature AM07073v1 BVDSS (norm) 20 Figure 7. 1 2 3 4 5 6 7 8 9 VGS(V) Static drain-source on resistance AM07074v1 RDS(on) (mOhm) VGS=10V 1.15 7.35 1.10 7.30 1.05 7.25 1.00 0.95 7.20 0.90 7.15 0.85 0.80 -50 -25 6/13 0 25 50 75 100 125 TJ(°C) 7.10 0 Doc ID 15661 Rev 3 10 20 30 40 50 ID(A) STD55N4F5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM07075v1 VGS (V) Capacitance variations AM07076v1 C (pF) VDD=20V ID=55A 12 Ciss 1000 10 8 Coss 100 6 Crss 4 10 2 0 0 10 5 20 15 25 30 Figure 10. Normalized gate threshold voltage vs temperature AM07077v1 VGS(th) (norm) 1 0.1 Qg(nC) 1 10 VDS(V) Figure 11. Normalized on resistance vs temperature AM07078v1 RDS(on) (norm) 1.2 2.0 1.0 1.5 0.8 0.6 1.0 0.4 0.5 0.2 0 -50 -25 0 25 50 75 100 125 TJ(°C) 0 -50 -25 0 25 50 75 100 125 TJ(°C) Figure 12. Source-drain diode forward characteristics AM07079v1 VSD (V) TJ=-55°C 1.0 0.8 TJ=25°C TJ=175°C 0.6 0.4 0.2 0 0 10 20 30 40 50 ISD(A) Doc ID 15661 Rev 3 7/13 Test circuits 3 STD55N4F5 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/13 0 Doc ID 15661 Rev 3 10% AM01473v1 STD55N4F5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 15661 Rev 3 9/13 Package mechanical data STD55N4F5 TO-252 (DPAK) mechanical data DIM. mm. min. ty p ma x . A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4. 70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G 10/13 Doc ID 15661 Rev 3 STD55N4F5 5 Packaging mechanical data Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 D1 1.5 E 1.65 MIN. 1.5 C 12.8 D 20.2 G 16.4 N 50 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 40 15.7 12.992 0.059 13.2 0.504 0.520 18.4 0.645 0.724 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 F R MAX. MAX. K0 W MIN. 330 B T TAPE MECHANICAL DATA inch MAX. 1.574 16.3 0.618 0.641 Doc ID 15661 Rev 3 11/13 Revision history 6 STD55N4F5 Revision history Table 8. 12/13 Document revision history Date Revision Changes 06-May-2009 1 First release 10-Jul-2009 2 – Document status promoted from target specification to preliminary data – RDS(on) max value changed 22-Jun-2010 3 Document status promoted from preliminary data to datasheet Doc ID 15661 Rev 3 STD55N4F5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 15661 Rev 3 13/13