STMICROELECTRONICS VN5770AKTR-E

VN5770AK-E
Quad smart power solid state relay
for complete H bridge configurations
Features
Type
RDS(on)
IOUT
VCC
VN5770AK-E
280mΩ(1)
8.5A(2)
36V
1. Total resistance of one side in bridge configuration
SO-28
2. Typical current limitation value
■
■
■
VIPower™ M0-3 OMNIFET II. This device is
suitable to drive a DC motor in a bridge
configuration as well as to be used as a quad
switch for any low voltage application.
General features
– Inrush current management by active
power limitation on the high side switches
– Very low stand-by current
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
European directive
The dual high side switches integrate built-in nonlatching thermal shutdown with thermal
hysteresis. An output current limiter protects the
device in overload condition. In the case of long
overload duration, the device limits the dissipated
power to a safe level up to thermal shut-down
intervention. An analog current sense pin delivers
a current proportional to the load current
(according to a known ratio) and indicates
overtemperature shutdown of the relevant high
side switch through a voltage flag.
Protection
– High side drivers undervoltage shutdown
– Overvoltage clamp
– Output current limitation
– High and low side overtemperature
shutdown
– Short circuit protection
– ESD protection
The low side switches have built-in non-latching
thermal shutdown with thermal hysteresis, linear
current limitation and overvoltage clamping.
Diagnostic functions
– Proportional load current sense
– Thermal shutdown indication on both the
high and low side switches
Fault feedback for overtemperature shutdown of
the low side switch is indicated by the relevant
input pin current consumption going up to the fault
sink current flag.
Description
Applications
The VN5770AK-E is a device formed by three
monolithic chips housed in a standard SO-28
package: a double high side and two low side
switches. The double high side is made using
STMicroelectronics VIPower™ M0-5 Technology,
while the low side switches are fully protected
Table 1.
■
DC motor driving in full or half bridge
configuration
■
All types of resistive, inductive and capacitive
loads
Order codes
February 2007
Package
Tube
Tape and Reel
SO-28
VN5770AK-E
VN5770AKTR-E
Rev 2
1/31
www.st.com
31
Contents
VN5770AK-E
Contents
1
Block diagram and pin descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.1
3
4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.1
Electrical characteristics for dual high side switch . . . . . . . . . . . . . . . . . . . 9
3.2
Electrical characteristics for low side switches . . . . . . . . . . . . . . . . . . . . . 15
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.1
5
2/31
SO-28 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
6.1
7
Maximum demagnetization energy (VCC = 13.5V) . . . . . . . . . . . . . . . . . . 22
Package and thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.1
6
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
SO-28 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
VN5770AK-E
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Table 22.
Table 23.
Table 24.
Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pin descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Dual high side switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Low side switch. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Power section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Switching (VCC=13V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Logic input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Protection and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Current sense (8V<VCC<16V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
On . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Dynamic (Tj=25°C, unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Switching (Tj=25°C, unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Source drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Protection and diagnostics (-40°C < Tj < 150°C, unless otherwise specified) . . . . . . . . . . 17
Thermal calculations in clockwise and anti-clockwise operation in steady-state mode . . . 24
Thermal resistances definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Single pulse thermal impedance definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Thermal calculations in transient mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
SO-28 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3/31
List of figures
VN5770AK-E
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Figure 33.
Figure 34.
Figure 35.
Figure 36.
Figure 37.
Figure 38.
Figure 39.
Figure 40.
Figure 41.
Figure 42.
Figure 43.
Figure 44.
Figure 45.
4/31
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Configuration diagram (Top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Switching time waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Output voltage drop limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Current sense delay characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Off state output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Input low level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
On state resistance vs. Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
On state resistance vs. VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Undervoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
ILIMH Vs. Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Static drain source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Input voltage vs. input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Static drain-source on resistance vs. Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Static drain-source on resistance vs. input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Static drain-source on resistance vs. input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Normalized input threshold voltage vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Normalized on resistance vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Current limit vs. junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Typical application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Recommended motor operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Maximum turn off current versus load inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
SO-28 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Chipset configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Auto and mutual Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . 23
SO-28 HSD thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . 25
SO-28 LSD thermal impedance junction ambient single pulse. . . . . . . . . . . . . . . . . . . . . . 25
Thermal fitting model of an H-Bridge in SO-28 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
SO-28 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
SO-28 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
VN5770AK-E
1
Block diagram and pin descriptions
Block diagram and pin descriptions
Figure 1.
Block diagram
Vcc
Vcc
clamp
Undervoltage
GND
Clamp 1
INPUT1
SOURCE1
Driver 1
Clamp 2
INPUT2
Logic
Current limiter 1
Driver 2
SOURCE2
Vds limiter 1
Current limiter 2
Overtemp. 1
Power limitation
VDS limiter 2
Overtemp. 2
Power limitation
K
C.SENSE
K
INPUT3
IDS1
IDS2
Overvoltage
Clamp
DRAIN3
Gate
Control
SOURCE3
Over
Temperature
Linear
Current
Limiter
Overvoltage
Clamp
INPUT4
DRAIN4
Gate
Control
SOURCE4
Over
Temperature
Linear
Current
Limiter
5/31
Block diagram and pin descriptions
Table 2.
Pin descriptions
No
NAME
FUNCTION
1, 3, 25, 28
DRAIN 3
Drain of Switch 3 (low-side switch)
2
INPUT 3
Input of Switch 3 (low-side switch)
4, 11
N.C.
Not Connected
5, 10, 19, 24
VCC
Drain of Switches 1 and 2 (high-side switches) and Power Supply
Voltage
6
GND
Ground of Switches 1 and 2 (high-side switches)
7
INPUT 1
Input of Switch 1 (high-side switches)
8
INPUT 2
Input of Switch 2 (high-side switch)
9
CURRENT
SENSE
Analog current sense pin, delivers a current proportional to the
load current
12, 14, 15, 18 DRAIN 4
13
Drain of switch 4 (low-side switch)
INPUT 4
Input of Switch 4 (low-side switch)
16, 17
SOURCE 4
Source of Switch 4 (low-side switch)
20, 21
SOURCE 2
Source of Switch 2 (high-side switch)
22, 23
SOURCE 1
Source of Switch 1 (high-side switch)
26, 27
SOURCE 3
Source of Switch 3 (low-side switch)
Figure 2.
6/31
VN5770AK-E
Configuration diagram (Top view)
VN5770AK-E
2
Maximum ratings
Maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in Section 2.1: Absolute
maximum ratings for extended periods may affect device reliability. Refer also to the
STMicroelectronics SURE Program and other relevant quality document.
2.1
Absolute maximum ratings
Table 3.
Thermal Data
Symbol
Parameter
Max value
Unit
Rthj-case
Thermal Resistance Junction-lead (High-side switch)
10
°C/W
Rthj-case
Thermal Resistance Junction-lead (Low-side switch)
7
°C/W
Rthj-amb
Thermal Resistance Junction-ambient.
See
Figure 38
°C/W
Table 4.
Dual high side switch
Symbol
Parameter
Value
Unit
VCC
DC supply voltage
41
V
-VCC
Reverse DC supply voltage
0.3
V
- IGND
DC reverse ground pin current
200
mA
Internally limited
A
-12
A
DC input current
-1 to 10
mA
DC current sense disable input current
-1 to 10
mA
VCC-41
+VCC
V
V
32
mJ
IOUT
- IOUT
IIN
ICSD
DC output current
Reverse DC output current
VCSENSE Current sense maximum voltage
EMAX
Maximum switching energy (single pulse)
(L=3.7mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IOUT = IlimL(Typ.) )
VESD
Electrostatic Discharge (Human Body Model: R=1.5KΩ;
C=100pF)
- INPUT
- CURRENT SENSE
- OUTPUT
- VCC
4000
2000
5000
5000
VESD
Charge device model (CDM-AEC-Q100-011)
750
V
Junction operating temperature
-40 to 150
°C
Storage temperature
-55 to 150
°C
Tj
Tstg
V
V
V
V
7/31
Maximum ratings
Table 5.
VN5770AK-E
Low side switch
Symbol
Value
Unit
VDSn
Drain-source Voltage (VINn=0V)
Internally Clamped
V
VINn
Input Voltage
Internally Clamped
V
IINn
Input Current
+/-20
mA
220
Ω
Internally Limited
A
-12
A
RIN MINn
Minimum Input Series Impedance
IDn
Drain Current
IRn
Reverse DC Output Current
VESD1
Electrostatic Discharge (R=1.5KΩ, C=100pF)
4000
V
VESD2
Electrostatic Discharge on output pins only
(R=330Ω, C=150pF)
16500
V
4
W
Ptot
Total Dissipation at Tc=25°C
Tj
Operating Junction Temperature
Internally limited
°C
Tc
Case Operating Temperature
Internally limited
°C
-55 to 150
°C
Tstg
8/31
Parameter
Storage Temperature
VN5770AK-E
Electrical characteristics
3
Electrical characteristics
3.1
Electrical characteristics for dual high side switch
Note:
Values specified in this section are for 8V < VCC < 36V; -40°C < Tj < 150°C, unless
otherwise specified (for each channel)
Table 6.
Power section
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
4.5
13
36
V
4.5
V
VCC
Operating supply
voltage
VUSD
Undervoltage
shutdown
3.5
Undervoltage shutdown hysteresis
0.5
VUSDhyst
RON
Clamp Voltage
IS=20 mA
IS
Supply current
Off State; VCC=13V; Tj=25°C;
VIN=VOUT=VSENSE=0V
On State; VCC=13V; VIN=5V; IOUT=0A
IL(off)
Off state output
current(2)
VIN=VOUT=0V; VCC=13V; Tj=25°C
VIN=VOUT=0V; VCC=13V; Tj=125°C
VF
160
320
210
mΩ
mΩ
mΩ
46
52
V
2(1)
3
5(1)
6
µA
mA
3
5
µA
0.7
V
IOUT=3A; Tj=25°C
On state resistance IOUT=3A; Tj=150°C
IOUT=3A; VCC=5V; Tj=25°C
Vclamp
V
41
0
0
Output - VCC diode
-IOUT=3A; Tj=150°C
voltage(2)
1. PowerMOS leakage included
2. For each channel
Table 7.
Switching (VCC=13V)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
RL=4.3Ω (see Figure 3.)
15
µs
td(off)
Turn-off delay time
RL=4.3Ω (see Figure 3.)
10
µs
(dVOUT/dt)on
Turn-on voltage
slope
RL=4.3Ω
See
Figure 15
V/µs
(dVOUT/dt)off
Turn-off voltage
slope
RL=4.3Ω
See Figure
17.
V/µs
WON
Switching energy
losses during twon
RL=4.3Ω (see Figure 3.)
0.16
mJ
WOFF
Switching energy
losses during twoff
RL=4.3Ω (see Figure 3.)
0.08
mJ
9/31
Electrical characteristics
Table 8.
Symbol
VN5770AK-E
Logic input
Parameter
Test Conditions
VIL
Input low level voltage
IIL
Low level input current
VIH
Input high level voltage
IIH
High level input current VIN=2.1V
VI(hyst)
VICL
Table 9.
Symbol
VIN=0.9V
IIN=1mA
IIN=-1mA
Parameter
Test Conditions
VCC=13V
5V<VCC<36V
IlimL
Short circuit current
during thermal cycling
VCC=13V; TR<Tj<TTSD
TTSD
Shutdown temperature
TR
Reset temperature
TRS
Thermal reset of
STATUS
VON
Unit
V
1
µA
2.1
V
µA
10
V
5.5
7
V
V
-0.7
Protection and diagnostics(1)
DC Short circuit
current
VDEMAG
Max.
0.25
IlimH
THYST
Typ.
0.9
Input hysteresis
voltage
Input clamp voltage
Min.
Min.
Typ.
Max.
Unit
6
8.5
12
12
A
A
3.5
150
175
A
200
TRS + 1 TRS + 5
°C
°C
135
°C
Thermal hysteresis
(TTSD-TR)
7
°C
Turn-off output voltage
clamp
IOUT=1A; VIN=0; L=20mH
VCC-41 VCC-46 VCC-52
V
Output voltage drop
limitation
IOUT=0.03A; Tj=-40°C to
150°C
(see Figure 4.)
25
mV
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles
Table 10.
Symbol
10/31
Current sense (8V<VCC<16V)
Parameter
Test Conditions
Min.
Typ.
Max.
850
1450 2020
K0
IOUT/ISENSE
IOUT=0.080A; VSENSE=0.5V;
Tj=-40°C to 50°C
K1
IOUT/ISENSE
IOUT=0.35A; VSENSE=0.5V;
Tj=-40°C to 150°C
Tj=25°C to 150°C
940 1360 1900
1040 1360 1680
K2
IOUT/ISENSE
IOUT=3A; VSENSE=4V;
Tj=-40°C to 150°C
1200 1270 1350
K3
IOUT/ISENSE
IOUT=5A; VSENSE=4V;
Tj=-40°C to 150°C
1180 1260 1330
Unit
VN5770AK-E
Electrical characteristics
Table 10.
Current sense (8V<VCC<16V)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
1
2
µA
µA
ISENSE0
Analog sense
current
IOUT=0A; VSENSE=0V;
VIN=0V; Tj=-40°C to 150°C
VIN=5V; Tj=-40°C to 150°C
0
0
VSENSE
Max analog sense
output voltage
IOUT=5A; RSENSE=3.9KΩ
5
VSENSEH
Analog sense output
voltage in
VCC=13V; RSENSE=3.9KΩ
overtemperature
condition
9
V
ISENSEH
Analog sense output
current in
VCC=13V
overtemperature
condition
8
mA
V
Delay Response
tDSENSE2H time from rising
edge of INPUT pin
VSENSE<4V, 0.35A<Iout<5A
ISENSE=90% of ISENSE max (see
Figure 5.)
70
300
µs
Delay Response
tDSENSE2L time from falling
edge of INPUT pin
VSENSE<4V, 0.35A<Iout<5A
ISENSE=10% of ISENSE max (see
Figure 5.)
100
250
µs
Figure 3.
Switching time waveforms
VOUTn
90%
80%
dVOUT/dt(off)
dVOUT/dt(on)
10%
t
VINn
td(on)
td(off)
t
11/31
Electrical characteristics
Figure 4.
VN5770AK-E
Output voltage drop limitation
Vcc-Vout
Tj=150oC
Tj=25oC
Tj=-40oC
Von
Iout
Von/Ron(T)
Table 11.
Truth table
CONDITIONS
INPUT
OUTPUT
SENSE
Normal operation
L
H
L
H
0
Nominal
Overtemperature
L
H
L
L
0
VSENSEH
Undervoltage
L
H
L
L
0
0
Short circuit to GND
L
H
L
L
0
0
Short circuit to VCC
L
H
H
H
0
< Nominal
Negative output voltage
clamp
L
L
0
Figure 5.
Current sense delay characteristics
INPUT
LOAD CURRENT
SENSE CURRENT
tDSENSE2H
12/31
tDSENSE2L
VN5770AK-E
Figure 6.
Electrical characteristics
Off state output current
Figure 7.
Iloff (uA)
High level input current
Iih (uA)
5
0.07
4.5
0.06
Vin=2.1V
4
Off State
Vcc=13V
Vin=Vout=0V
0.05
3.5
3
0.04
2.5
TBD
0.03
2
1.5
0.02
1
0.01
0.5
0
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
Tc (°C)
Figure 8.
50
75
100
125
150
175
100
125
150
175
150
175
Tc (°C)
Input clamp voltage
Figure 9.
Vicl (V)
Input low level
Vil (V)
7
2
6.8
1.8
lin=1mA
6.6
1.6
6.4
1.4
6.2
1.2
6
1
5.8
0.8
5.6
0.6
5.4
0.4
5.2
0.2
5
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
Tc (°C)
50
75
Tc (°C)
Figure 10. Input high level
Figure 11. Input hysteresis voltage
Vih (V)
Vihyst (V)
4
1
0.9
3.5
0.8
3
0.7
2.5
0.6
2
0.5
0.4
1.5
0.3
1
0.2
0.5
0.1
0
0
-50
-25
0
25
50
75
Tc (°C)
100
125
150
175
-50
-25
0
25
50
75
100
125
Tc (°C)
13/31
Electrical characteristics
VN5770AK-E
Figure 12. On state resistance vs. Tcase
Figure 13. On state resistance vs. VCC
Ron (mOhm)
Ron (mOhm)
300
400
350
Iout=3A
Vcc=13V
250
Iout=3A
300
Tc=150 °C
250
200
Tc=125 °C
200
150
150
Tc=25 °C
100
Tc=-40 °C
100
50
50
0
-50
-25
0
25
50
75
100
125
150
175
0
5
10
15
Tc (°C)
20
25
30
35
40
150
175
150
175
Vcc (V)
Figure 14. Undervoltage shutdown
Figure 15. Turn-on voltage slope
Vusd (V)
(dVout/dt)on (V/ms)
16
1000
900
14
800
12
700
10
Vcc=13V
RI=4.3Ohm
600
8
500
400
6
300
4
200
2
100
0
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
Tc (°C)
75
100
125
Tc (°C)
Figure 16. ILIMH Vs. Tcase
Figure 17. Turn-off voltage slope
Ilimh (A)
(dVout/dt)off (V/ms)
20
1500
18
1400
Vcc=13V
16
1300
14
1200
12
1100
10
Vcc=13V
RI=4.3Ohm
1000
TBD
8
900
6
800
4
700
2
600
0
500
-50
-25
0
25
50
Tc (°C)
14/31
50
75
100
125
150
175
-50
-25
0
25
50
75
Tc (°C)
100
125
VN5770AK-E
Electrical characteristics
3.2
Electrical characteristics for low side switches
Note:
Values specified in this section are for -40°C < Tj < 150°C, unless otherwise specified
Table 12.
Symbol
Off
Parameter
Test Conditions
Min
Typ
Max
Unit
45
55
V
VCLAMP
Drain-source Clamp
Voltage
VIN=0V; ID=1.5A
40
VCLTH
Drain-source Clamp
Threshold Voltage
VIN=0V; ID=2mA
36
VINTH
Input Threshold
Voltage
VDS=VIN; ID=1mA
0.5
IISS
Supply Current from
Input Pin
VDS=0V; VIN=5V
VINCL
Input-Source Clamp
Voltage
IIN=1mA
IIN=-1mA
IDSS
Zero Input Voltage
Drain Current
(VIN=0V)
VDS=13V; VIN=0V; Tj=25°C
VDS=25V; VIN=0V
Table 13.
Symbol
RDS(on)
Table 14.
Symbol
gfs
COSS
Table 15.
Symbol
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
6
-1.0
V
2.5
V
100
150
µA
6.8
8
-0.3
V
30
75
µA
Max
Unit
120
240
mΩ
Max
Unit
On
Parameter
Static Drain-source
On Resistance
Test Conditions
Min
Typ
VIN=5V; ID=3A; Tj=25°C
VIN=5V; ID=3A
Dynamic (Tj=25°C, unless otherwise specified)
Parameter
Test Conditions
Min
Typ
Forward
Transconductance
VDD=13V; ID=1.5A
2.5
S
Output Capacitance
VDS=13V; f=1MHz; VIN=0V
150
pF
Switching (Tj=25°C, unless otherwise specified)
Parameter
Test Conditions
Typ
Max
Unit
200
400
ns
1.2
2.5
µs
600
1350
ns
Fall Time
400
1000
ns
Turn-on Delay Time
0.80
2.5
µs
3.7
7.5
µs
2.6
7.5
µs
2.3
7.0
µs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD=15V; ID=3A
Vgen=5V; Rgen=RIN MINn=220Ω
VDD=15V; ID=3A
Vgen=5V; Rgen=2.2KΩ
Min
15/31
Electrical characteristics
Table 15.
VN5770AK-E
Switching (Tj=25°C, unless otherwise specified)
VDD=15V; ID=3A
(dI/dt)on Turn-on Current Slope Vgen=5V;
Rgen=RIN MINn=220Ω
Qi
Table 16.
Symbol
VSD(1)
Total Input Charge
Parameter
Forward On Voltage
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
Test Conditions
ISD=1.5A; VIN=0V
ISD=1.5A; dI/dt=12A/ms
VDD=30V; L=200µH
Reverse Recovery
Current
1. Pulsed: Pulse duration = 300µs, duty cycle 1.5%
16/31
A/µs
9.0
nC
Source drain diode
trr
IRRM
VDD=12V; ID=3A; VIN=5V
Igen =2.13mA
3.0
Min
Typ
Max
Unit
0.8
V
400
ns
200
nC
1.0
A
VN5770AK-E
Electrical characteristics
Table 17.
Protection and diagnostics (-40°C < Tj < 150°C, unless otherwise
specified)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
6
8.5
12
A
Ilim
Drain Current Limit
VIN=5V; VDS=13V
tdlim
Step Response
Current Limit
VIN=5V; VDS=13V
Tjsh
Overtemperature
Shutdown
150
Tjrs
Overtemperature
Reset
135
Igf
Fault Sink Current
VIN=5V; VDS=13V; Tj=Tjsh
10
Eas
Single Pulse
Avalanche Energy
starting Tj=25°C; VDD=24V
VIN=5V; Rgen=RIN MINn=220Ω;
L=24mH
100
Figure 18. Static drain source on resistance
µs
10
175
200
°C
°C
15
20
mA
mJ
Figure 19. Derating curve
Rds(on) (mohms)
1000
Tj=-40ºC
900
Vin=2.5V
800
700
600
Tj=25ºC
500
TBD
400
300
Tj=150ºC
200
100
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
Id(A)
Figure 20. Transconductance
Figure 21. Transfer characteristics
Gfs (S)
Idon (A)
11
6
10
5.5
Vds=13V
9
Tj=-40ºC
8
4.5
Tj=150ºC
7
Vds=13.5V
5
Tj=25ºC
4
Tj=150ºC
3.5
6
3
5
Tj=-40ºC
2.5
4
2
3
1.5
2
1
1
0.5
0
Tj=25ºC
0
0
0.5
1
1.5
2
2.5
3
Id (A)
3.5
4
4.5
5
5.5
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Vin (V)
17/31
Electrical characteristics
VN5770AK-E
Figure 22. Input voltage vs. input charge
Figure 23. Capacitance variations
Vin (V)
C(pF)
9
350
8
Vds=1V
Id=1.5A
7
300
f=1MHz
Vin=0V
250
6
5
200
4
150
3
2
100
1
50
0
0
1
2
3
4
5
6
7
8
9
10
0
11
5
10
15
20
25
30
35
Vds(V)
Qg (nC)
Figure 24. Output characteristics
Figure 25. Step response current limit
Id (A)
Tdlim(usec)
5
13
Vin=5V
4.5
12.5
Vin=4V
Vin=5V
Rg=220ohm
12
4
11.5
3.5
Vin=3V
11
3
10.5
2.5
TBD
2
10
9.5
1.5
9
1
8.5
0.5
8
0
7.5
0
1
2
3
4
5
6
7
8
9
10
5
7.5
10
12.5
15
Vds (V)
20
22.5
25
27.5
30
32.5
Vdd(V)
Figure 26. Source-drain diode forward
characteristics
Figure 27. Static drain-source on resistance
vs. Id
Vsd (mV)
Rds(on) (mohms)
1100
250
225
1050
Vin=5V
Vin=0V
1000
200
950
175
900
150
850
125
800
100
750
75
700
50
650
25
Tj=150ºC
Tj=25ºC
Tj= - 40ºC
0
600
0
1
2
3
4
5
6
Id (A)
18/31
17.5
7
8
9
10
11
12
0
0.5
1
1.5
2
Id (A)
2.5
3
3.5
4
VN5770AK-E
Electrical characteristics
Figure 28. Static drain-source on resistance
vs. input voltage
Figure 29. Static drain-source on resistance
vs. input voltage
Rds(on) (mohms)
Rds(on) (mohms)
300
250
275
225
250
Id=1.5A
200
Tj=150ºC
225
175
200
175
Tj=150ºC
150
Id=3.5A
Id=1A
125
150
Tj=25ºC
125
100
100
Tj=-40ºC
75
75
Id=3.5A
Id=1A
50
Id=3.5A
Id=1A
Tj=25ºC
50
Tj=-40ºC
25
25
0
0
3
3.5
4
4.5
5
5.5
6
3
6.5
3.5
4
4.5
5
5.5
6
6.5
Vin(V)
Vin(V)
Figure 30. Normalized input threshold voltage Figure 31. Normalized on resistance vs.
vs. temperature
temperature
Vinth (V)
Ron (mOhm)
1.8
2
1.8
1.6
Iout=3A
Vcc=13V
1.6
Vds=Vin
Id=1mA
1.4
1.4
1.2
1
1.2
0.8
1
0.6
0.4
0.8
0.2
0
0.6
-50
-25
0
25
50
75
100
125
150
175
Tc (°C)
-50
-25
0
25
50
75
100
125
150
175
Tc (°C)
Figure 32. Current limit vs. junction
temperature
Ilim (A)
12
Vcc=13V
Vin=5V
10
8
6
4
2
0
-50
-25
0
25
50
75
100
125
150
175
Tc (°C)
19/31
Application information
4
VN5770AK-E
Application information
Figure 33. Typical application schematic
D
Vbatt
5V
Vcc
C
Vz 32V > 40V
Z
Input 1
Source 1
Input 2
Control
Current Sense
M
Source 2
Micro
Drain 3
Input 3
Motor inducuctance
Control
Source 3
energy recirculation
IM
Drain 4
Input 4
Control
Source 4
GND
Mostly motor bridge drivers use a reverse battery protection diode (D) inside supply rail. This diode prevents a reverse
current flow back to Vbatt in case the bridge gets disabled via the logic inputs while motor inductance still carries
energy. In order to prevent a hazardous overvoltage at circuit supply terminal (Vcc), a blocking capacitor (C) is needed
to limit the voltage overshoot. As basic orientation, 50µF per 1A load current in recommended. In alternative, also a
Zener protection (Z) is suitable.
Even if a reverse polarity diode is not present, it is recommended to use a capacitor or zener at Vcc because a similar
problem appears in case supply terminal of the module has intermittent electrical contact to the battery or gets
disconnected while motor is operating.
io n
op
op
st
er
op
at
st
or
m
e
tiv
oc
Cl
Ac
kw
is e
ot
ot
m
iv e
or
se
wi
ss
or
ot
m
iv e
ss
Pa
Pa
op
st
at
er
op
is e
kw
oc
Cl
Co
op unt
er er
at cl
io o c
n
k
io n
Figure 34. Recommended motor operation
In p u t 1
In p u t 2
In p u t 3
In p u t 4
Vz
F ly b a ck c la m p e d
b y Z e n e r d io d e Z
F ly b a ck e n e rg y c h a rg e d
F ly b a ck s p ik e d u rin g c ro s s
in to c a p a c ito r C
c u rre n t p ro te c tio n tim e
V cc
t
+I M
t
-IM
20/31
D e a d tim e to a v o id c ro ss c o n d u c tio n
VN5770AK-E
Application information
Figure 35. Waveforms
NORMAL OPERATION
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
UNDERVOLTAGE
VUSDhyst
VCC
VUSD
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
SHORT TO VCC
INPUT
CS_DIS
LOAD VOLTAGE
LOAD CURRENT
SENSE CURRENT
<Nominal
<Nominal
OVERLOAD OPERATION
Tj
TR TTSD
TRS
INPUT
CS_DIS
ILIMH
ILIML
LOAD CURRENT
VSENSEH
SENSE CURRENT
current power
limitation limitation
thermal cycling
SHORTED LOAD
NORMAL LOAD
21/31
Application information
4.1
VN5770AK-E
Maximum demagnetization energy (VCC = 13.5V)
Figure 36. Maximum turn off current versus load inductance
ILMAX (A)
100
10
A
B
C
1
A = Single Pulse at TJstart=150ºC
B= Repetitive pulse at TJstart=100ºC
C= Repetitive Pulse at TJstart=125ºC
0.1
0.01
0.1
10
1
100
L (mH)
VIN, IL
Demagnetization
Demagnetization
Demagnetization
t
Note:
Values are generated with RL=0Ω
In the case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse
must not exceed the temperature specified above for curves B and C.
22/31
VN5770AK-E
Package and thermal data
5
Package and thermal data
5.1
SO-28 thermal data
Figure 37. SO-28 PC board
Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm,
Cu thickness=35mm, Copper areas: from minimum pad layout to 16cm2).
Figure 38. Chipset configuration
LOW SIDE
CHIP
RthAB
HIGH SIDE
CHIP
channels 1,2
channel 3
RthAC
LOW SIDE
CHIP
channel 4
RthA
RthB
RthC
RthBC
Figure 39. Auto and mutual Rthj-amb vs PCB copper area in open box free air
condition(a)
Rth (˚C/W)
RthA
RthB = RthC
RthAB = RthAC
RthBC
60
50
40
30
20
10
0
0
1
2
3
4
5
6
7
Cu Area (refer to PCB layout)
a. See Figure 38. For more detailed information see Table 18 and Table 19.
23/31
Package and thermal data
Table 18.
VN5770AK-E
Thermal calculations in clockwise and anti-clockwise operation in steadystate mode
HS1
HS2
LS3
LS4
ON
OFF
OFF
ON
PdHS1 x RthHS + PdLS4 x PdHS1 x RthHSLS +
PdHS1 x RthHSLS +
RthHSLS + Tamb
PdLS4 x RthLSLS + Tamb PdLS4 x RthLS + Tamb
OFF
ON
ON
OFF
PdHS2 x RthHS + PdLS3 x PdHS2 x RthHSLS +
RthHSLS + Tamb
PdLS3 x RthLS + Tamb
Table 19.
TjHS12
TjLS3
TjLS4
PdHS2 x RthHSLS +
PdLS3 x RthLSLS + Tamb
Thermal resistances definitions(1)
RthHS = RthHS1 = RthHS2
High side chip thermal resistance junction to ambient
(HS1 or HS2 in ON state)
RthLS = RthLS3 = RthLS4
Low side chip thermal resistance junction to ambient
RthHSLS = RthHS1LS4 = RthHS2LS3
Mutual thermal resistance junction to ambient between
high side and low side chips
RthLSLS = RthLS3LS4
Mutual thermal resistance junction to ambient between
low side chips
1. values dependent on PCB heatsink area
Table 20.
Single pulse thermal impedance definitions(1)
ZthHS
High Side Chip Thermal Impedance Junction to
Ambient
ZthLS = ZthLS3 = ZthLS4
Low Side Chip Thermal Impedance Junction to
Ambient
ZthHSLS = ZthHS12LS3 = ZthHS12LS4
Mutual Thermal Impedance Junction to Ambient
between High Side and Low Side Chips
ZthLSLS = ZthLS3LS4
Mutual Thermal Impedance Junction to Ambient
between Low Side Chips
1. values dependent on PCB heatsink area
Table 21.
Thermal calculations in transient mode(1)
TjHS12
ZthHS x PdHS12 + ZthHSLS x (PdLS3 + PdLS4) + Tamb
TjLS3
ZthHSLS x PdHS12 + ZthLS x PdLS3 + ZthLSLS x PdLS4 + Tamb
TjLS4
ZthHSLS x PdHS12 + ZthLSLS x PdLS3 + ZthLS x PdLS4 + Tamb
1. Calculation is valid in any dynamic operating condition. Pd values set by user.
24/31
VN5770AK-E
Package and thermal data
Figure 40. SO-28 HSD thermal impedance junction ambient single pulse
ZTH (˚C/W)
Footprint
100
1 cm2
2 cm2
6 cm2
Footprint
1 cm2
10
2 cm2
HSD
6 cm2
HsLsD
1
0.1
0.001
0.1
0.01
1
10
100
1000
time (sec)
Figure 41. SO-28 LSD thermal impedance junction ambient single pulse
ZTH (˚C/W)
Footprint
100
1 cm2
2 cm2
6 cm2
Footprint
10
1 cm2
LSD
2 cm2
6 cm2
LsLsD
0.1
0.001
0.01
0.1
1
10
100
1000
time (sec)
Pulse Calculation Formula
Z THδ = R TH ⋅ δ + Z THtp ( 1 – δ )
where
δ = tp ⁄ T
25/31
Package and thermal data
VN5770AK-E
Figure 42. Thermal fitting model of an H-Bridge in SO-28
Table 22.
26/31
Thermal parameters(1)
Area/island (cm2)
Footprint
R1 (°C/W)
1
R2 (°C/W)
1.8
R3 (°C/W)
3.5
R4 (°C/W)
13.5
R5 (°C/W)
10.5
R6 (°C/W)
62.28
R7 (°C/W)
1
R8 (°C/W)
1.8
R9 (°C/W)
0.24
R10 (°C/W)
1.2
R11 (°C/W)
3.5
R12 (°C/W)
15.2
R13 (°C/W)
10.5
R14 (°C/W)
62.28
R15 (°C/W)
0.24
R16 (°C/W)
1.2
R17 (°C/W)
3.5
R18 (°C/W)
15.5
R19 (°C/W)
10.5
1
2
6
52.28
44.28
32.28
52.28
44.28
32.28
VN5770AK-E
Package and thermal data
Table 22.
Thermal parameters(1)
R20 (°C/W)
62.28
R21 (°C/W)
150
R22 (°C/W)
150
R23 (°C/W)
150
R24 (°C/W)
150
C1 (W·s/°C)
0.0008
C2 (W·s/°C)
0.001
C3 (W·s/°C)
0.008
C5 (W·s/°C)
0.2
C6 (W·s/°C)
1.6
C7 (W·s/°C)
0.0008
C8 (W·s/°C)
0.001
C9 (W·s/°C)
0.00015
C10 (W·s/°C)
0.0005
C11 (W·s/°C)
0.008
C13 (W·s/°C)
0.2
C14 (W·s/°C)
1.6
C15 (W·s/°C)
0.00015
C16 (W·s/°C)
0.0005
C17 (W·s/°C)
0.008
C19 (W·s/°C)
0.2
C20 (W·s/°C)
1.6
52.28
44.28
32.28
52.28
44.28
32.28
1.61
1.7
3.25
1.61
1.7
3.25
1.61
1.7
3.25
1. A blank space means that the value is the same as the previous one
27/31
Package mechanical
VN5770AK-E
6
Package mechanical
6.1
SO-28 mechanical data
Table 23.
SO-28 mechanical data
millimeters
Symbol
Min
Typ
A
2.65
a1
0.10
0.30
b
0.35
0.49
b1
0.23
0.32
C
0.50
c1
45° (typ.)
D
17.7
18.1
E
10.00
10.65
e
1.27
e3
16.51
F
7.40
7.60
L
0.40
1.27
S
Figure 43. SO-28 package dimensions
28/31
Max
8° (max.)
VN5770AK-E
Package mechanical
Figure 44. SO-28 tube shipment (no suffix)
C
B
A
Base Q.ty
28
Bulk Q.ty
700
Tube length (± 0.5)
532
A
3.5
B
13.8
C (± 0.1)
0.6
Figure 45. Tape and reel shipment (suffix “TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
1000
1000
330
1.5
13
20.2
16.4
60
22.4
TAPE DIMENSIONS
According to Electronic Industries
Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (± 0.1)
P
D (± 0.1/-0)
D1 (min)
F (± 0.05)
K (max)
P1 (± 0.1)
16
4
12
1.5
1.5
7.5
6.5
2
End
All dimensions are in mm.
Start
Top
cover
tape
No components Components
500mm min
No components
500mm min
Empty components pockets
sealed with cover tape.
User direction of feed
29/31
Revision history
7
VN5770AK-E
Revision history
Table 24.
Document revision history
Date
Revision
June-2006
1
Initial release.
2
Reformatted.
Table 6: Power section updated.
Table 7: Switching (VCC=13V) updated.
Table 10: Current sense (8V<VCC<16V) updated.
Table 13: On updated.
Table 15: Switching (Tj=25°C, unless otherwise specified) updated.
Characteristic curves for high side and low side switches added.
Figure 38: Chipset configuration updated.
Figure 39: Auto and mutual Rthj-amb vs PCB copper area in open
box free air condition added.
Figure 40: SO-28 HSD thermal impedance junction ambient single
pulse, Figure 41: SO-28 LSD thermal impedance junction ambient
single pulse and Figure 42: Thermal fitting model of an H-Bridge in
SO-28 added.
Figure 22: Thermal parameters added.
High-side and low-side characteristic curves added.
Figure 35: Waveforms added.
Section 4.1: Maximum demagnetization energy (VCC = 13.5V)
added.
Figure 33: Typical application schematic added.
Table 10: Current sense (8V<VCC<16V) K0, K1, K2 and K3 values
updated.
16-Feb-2007
30/31
Changes
VN5770AK-E
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