STMICROELECTRONICS VN5010AKTR-E

VN5010AK-E
High side driver with analog current sense
for automotive applications
Features
Max supply voltage
VCC
Operating voltage range
VCC 4.5 to 36V
Max On-State resistance
RON
10 mΩ
Current limitation (typ)
ILIMH
65A
IS
2 µA
Off state supply current (typ)
■
41V
PowerSSO-24TM
– Electrostatic discharge protection
Application
Main features
– Inrush current active management by
power limitation
– Very low stand-by current
– 3.0v CMOS compatible input
– Optimized electromagnetic emission
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
European directive
■
Description
■
Diagnostic functions
– Proportional load current sense
– High current sense precision for wide range
currents
– Current sense disable
– Thermal shutdown indication
– Very low current sense leakage
■
Protections
– Undervoltage shut-down
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
of VCC
– Thermal shut down
– Reverse battery protection (see Application
schematic )
Table 1.
All types of resistive, inductive and capacitive
loads
The VN5010AK-E is a monolithic device made
using STMicroelectronics VIPower M0-5
technology. It is intended for driving resistive or
inductive loads with one side connected to
ground. Active VCC pin voltage clamp protects the
device against low energy spikes (see ISO7637
transient compatibility table). This device
integrates an analog current sense which delivers
a current proportional to the load current
(according to a known ratio) when CS_DIS is
driven low or left open. When CS_DIS is driven
high, the CURRENT SENSE pin is in a high
impedance condition. Output current limitation
protects the device in overload condition. In case
of long overload duration, the device limits the
dissipated power to safe level up to thermal shutdown intervention. Thermal shut-down with
automatic restart allows the device to recover
normal operation as soon as fault condition
disappears.
Device summary
Order codes
Package
TM
PowerSSO-24
February 2008
Tube
Tape and Reel
VN5010AK-E
VN5010AKTR-E
Rev 4
1/31
www.st.com
31
Contents
VN5010AK-E
Contents
1
Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
2.1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.3
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.1
4
6
2/31
3.1.1
Solution 1 : resistor in the ground line (RGND only) . . . . . . . . . . . . . . . 21
3.1.2
Solution 2 : diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . . 22
3.2
Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.3
MCU I/Os protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.4
Maximum demagnetization energy (VCC=13.5V) . . . . . . . . . . . . . . . . . . . 23
Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
4.1
5
GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 21
PowerSSO-24TM thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
5.1
ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
5.2
Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
VN5010AK-E
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pin function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Suggested connections for unused and N.C. pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Power section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Switching (VCC=13V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Logic input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Protections and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Current sense (8V<VCC<16V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Electrical transient requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
PowerSSO-24™ mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3/31
List of figures
VN5010AK-E
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Figure 33.
Figure 34.
4/31
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Connection diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Current sense delay characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Delay response time between rising edge of ouput current and rising edge of Current Sense
(CS enabled) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
IOUT/ISENSE vs. IOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Maximum current sense ratio drift vs load current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Output voltage drop limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Off State output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Input low level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
On state resistance vs. Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
On state resistance vs. VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Undervoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Turn-On voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
ILIMH vs. Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Turn-Off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
CS_DIS high level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
CS_DIS clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
CS_DIS low level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Maximum turn Off current versus load inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
PowerSSO-24TM PC board. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Rthj-amb Vs. PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . . 24
PowerSSO-24TM thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . 25
Thermal fitting model of a double channel HSD in PowerSSO-24TM . . . . . . . . . . . . . . . . . 25
PowerSSO-24™ package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
PowerSSO-24TM tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
PowerSSO-24TM tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
VN5010AK-E
1
Block diagram and pin description
Block diagram and pin description
Figure 1.
Block diagram
VCC
VCC
CLAMP
UNDERVOLTAGE
PwCLAMP
DRIVER
OUTPUT
GND
ILIM
VDSLIM
LOGIC
PwrLIM
INPUT
OVERTEMP.
IOUT
K
CURRENT
SENSE
CS_DIS
Table 2.
Pin function
Name
VCC
OUTPUT
GND
INPUT
CURRENT
SENSE
CS_DIS
Function
Battery connection.
Power output.
Ground connection. Must be reverse battery protected by an external
diode/resistor network.
Voltage controlled input pin with hysteresis, CMOS compatible. Controls output
switch state.
Analog current sense pin, delivers a current proportional to the load current.
Active high CMOS compatible pin, to disable the current sense pin.
5/31
Block diagram and pin description
Figure 2.
VN5010AK-E
Connection diagram (top view)
VCC
GND
NC
NC
INPUT
NC
CURRENT SENSE
NC
CS_DIS
NC
NC
VCC
1
2
3
4
5
6
24
23
22
21
20
19
NC
NC
NC
OUTPUT
OUTPUT
OUTPUT
7
8
9
10
11
12
18
17
16
15
14
13
OUTPUT
OUTPUT
OUTPUT
NC
NC
NC
TAB = Vcc
Table 3.
Suggested connections for unused and N.C. pins
Connection / Pin
Current Sense
N.C.
Output
Input
CS_DIS
Floating
N.R.(1)
X
X
X
X
To Ground
Through 1kΩ resistor
X
N.R.
Through 10kΩ
resistor
Through 10kΩ
resistor
1. Not recommended.
6/31
VN5010AK-E
2
Electrical specifications
Electrical specifications
Figure 3.
Current and voltage conventions
IS
VCC
ICSD
VCC
IOUT
CS_DIS
OUTPUT
VOUT
VCSD
IIN
INPUT
ISENSE
CURRENT SENSE
VSENSE
VIN
GND
IGND
Note:
VFn = VOUT - VCC during reverse battery condition.
2.1
Absolute maximum ratings
Stressing the device above the ratings listed in the “Absolute maximum ratings” tables may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in this section for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality documents.
Table 4.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCC
DC supply voltage
41
V
-VCC
Reverse DC supply voltage
0.3
V
- IGND
DC reverse ground pin current
200
mA
Internally
limited
A
30
A
DC input current
-1 to 10
mA
DC Current Sense disable input current
-1 to 10
mA
200
mA
IOUT
DC output current
- IOUT
Reverse DC output current
IIN
ICSD
-ICSENSE DC reverse CS pin current
7/31
Electrical specifications
Table 4.
VN5010AK-E
Absolute maximum ratings (continued)
Symbol
Parameter
VCSENSE Current Sense maximum voltage
Unit
VCC-41
+VCC
V
V
EMAX
Maximum switching energy (single pulse)
(L=1.25mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IOUT = IlimL(Typ.) )
609
mJ
VESD
Electrostatic discharge (Human Body Model: R=1.5KΩ; C=100pF)
- INPUT
4000
2000
V
VESD
Charge device model (CDM-AEC-Q100-011)
750
V
Junction operating temperature
-40 to 150
°C
Storage temperature
-55 to 150
°C
Tj
Tstg
Table 5.
Symbol
Thermal data
Parameter
Rthj-case Thermal resistance junction-case (MAX)
Rthj-amb
8/31
Value
Thermal resistance junction-ambient (MAX)
Max value
Unit
0.3
°C/W
See Figure 29.
°C/W
VN5010AK-E
2.2
Electrical specifications
Electrical characteristics
Values specified in this section are for 8V< VCC< 36V; -40°C< Tj< 150°C, unless otherwise
stated (for each channel).
Table 6.
Power section
Symbol
Parameter
VCC
Operating supply
voltage
VUSD
Test conditions
Min.
Typ. Max. Unit
13
36
V
Undervoltage
shutdown
3.5
4.5
V
VUSDhyst
Undervoltage
shutdown hysteresis
0.5
RON
On state resistance
IOUT= 6A; Tj= 25°C
IOUT= 6A; Tj= 150°C
Vclamp
Clamp voltage
ICC= 20 mA
IS
Supply current
Off State; VCC= 13V; Tj= 25°C;
VIN=VOUT=VSENSE=VCSD=0V
IL(off)
Off state output
current
VIN=VOUT=0V; VCC= 13V; Tj= 25°C
VIN=VOUT=0V; VCC= 13V; Tj= 125°C
Output - VCC diode
voltage
-IOUT= 10A; Tj= 150°C
VF
4.5
10
20
mΩ
mΩ
46
52
V
2(1)
5(1)
µA
0.01
3
5
µA
0.7
V
41
0
0
V
1. PowerMOS leakage included.
.
Table 7.
Symbol
Switching (VCC=13V)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-On delay time
RL= 2.6Ω (see Figure 8.)
35
µs
td(off)
Turn-Off delay time
RL= 2.6Ω (see Figure 8.)
65
µs
(dVOUT/dt)on
Turn-On voltage
slope
RL= 2.6Ω
See
Figure 20
V/ µs
(dVOUT/dt)off
Turn-Off voltage
slope
RL= 2.6Ω
See
Figure 22
V/ µs
WON
Switching energy
losses during twon
RL= 2.6Ω (see Figure 8.)
1.5
mJ
WOFF
Switching energy
losses during twoff
RL= 2.6Ω (see Figure 8.)
0.8
mJ
9/31
Electrical specifications
Table 8.
Symbol
VN5010AK-E
Logic input
Parameter
VIL
Input low level voltage
IIL
Low level input current
VIH
Input high level voltage
IIH
High level input current
VI(hyst)
Input hysteresis voltage
VICL
Test conditions
VIN= 0.9V
CS_DIS low level voltage
ICSDL
Low level CS_DIS current
VCSDH
CS_DIS high level voltage
ICSDH
High level CS_DIS current
Table 9.
Symbol
IIN= 1mA
IIN= -1mA
VCSD= 0.9V
0.9
V
µA
2.1
V
10
5.5
7
V
V
0.9
V
-0.7
1
µA
2.1
V
10
µA
V
ICSD= 1mA
ICSD= -1mA
5.5
Test conditions
Min.
Typ.
Max.
Unit
46
65
91
91
A
A
CS_DIS clamp voltage
7
-0.7
V
V
Protections and diagnostics(1)
Parameter
VCC= 13V
5V<VCC<36V
IlimL
Short circuit current during
thermal cycling
VCC= 13V;
TR<Tj<TTSD
TTSD
Shutdown temperature
TR
Reset temperature
TRS
Thermal reset of STATUS
24
150
175
TRS+1
TRS+5
Thermal hysteresis (TTSD-TR)
Output voltage drop
limitation
A
200
°C
7
IOUT=0.5A (see Figure 9.);
Tj= -40°C...+150°C
VCC
-41
°C
°C
135
VDEMAG Turn-Off output voltage clamp IOUT=2A; VIN=0; L=6mH
VCC
-46
°C
VCC
-52
25
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
10/31
µA
V
0.25
Short circuit current
VON
Unit
1
VCSD= 2.1V
IlimH
THYST
Max.
0.25
VCSD(hyst) CS_DIS hysteresis voltage
VCSCL
Typ.
VIN= 2.1V
Input clamp voltage
VCSDL
Min.
V
mV
VN5010AK-E
Electrical specifications
Table 10.
Symbol
K0
K1
dK1/K1(1)
K2
dK2/K2(1)
K3
dK3/K3(1)
ISENSE0
Current sense (8V<VCC<16V)
Parameter
Test conditions
IOUT/ISENSE
IOUT= 0.25A;
VSENSE=0.5V;VCSD=0V;
Tj= -40°C...150°C
IOUT/ISENSE
IOUT= 6A; VSENSE=0.5V; VCSD=0V;
Tj= -40°C...150°C
IOUT= 6A; VSENSE=0.5V; VCSD=0V;
Tj= 25°C...150°C
Current sense ratio
drift
IOUT= 6A; VSENSE= 0.5V;
VCSD= 0V;
TJ= -40 °C to 150 °C
IOUT/ISENSE
IOUT= 10A; VSENSE=4V; VCSD=0V;
Tj=-40°C...150°C
IOUT= 10A; VSENSE=4V; VCSD=0V;
Tj=25°C...150°C
Current sense ratio
drift
IOUT= 10A; VSENSE= 4V;
VCSD=0V;
TJ= -40 °C to 150 °C
IOUT/ISENSE
IOUT= 25A; VSENSE=4V; VCSD=0V;
Tj= -40°C...150°C
IOUT= 25A; VSENSE=4V; VCSD=0V;
Tj= 25°C...150°C
Current sense ratio
drift
Analog sense
leakage current
IOUT= 25A; VSENSE= 4V;
VCSD=0V;
TJ= -40 °C to 150 °C
Min. Typ. Max. Unit
2770 5490 8220
3610 4580 5630
3930 4580 5230
-8
+8
%
4000 4570 5220
4180 4570 4960
-5
+5
%
4480 4660 4980
4500 4660 4820
-3
+3
%
IOUT= 0A; VSENSE=0V;
VCSD= 5V; VIN=0V; Tj= -40°C...150°C
VCSD= 0V; VIN=5V; Tj= -40°C...150°C
0
0
1
2
µA
µA
IOUT= 2A; VSENSE=0V;
VCSD=5V; VIN=5V; Tj= -40°C...150°C
0
1
µA
45
mA
IOL
Openload On state
current detection
threshold
VIN = 5V, ISENSE= 5 µA
10
VSENSE
Max analog sense
output voltage
IOUT=15A; VCSD=0V;
5
VSENSEH
Analog sense output
voltage in
overtemperature
condition
VCC= 13V; RSENSE= 3.9KΩ
9
V
ISENSEH
Analog sense output
current in
overtemperature
condition
VCC= 13V; VSENSE= 5V
8
mA
V
11/31
Electrical specifications
Table 10.
Symbol
VN5010AK-E
Current sense (8V<VCC<16V) (continued)
Parameter
Test conditions
Min. Typ. Max. Unit
Delay response time
tDSENSE1H from falling edge of
CS_DIS pin
VSENSE<4V, 1.5A<Iout<25A
ISENSE= 90% of ISENSE max
(see Figure 4.)
50
100
µs
Delay response time
tDSENSE1L from rising edge of
CS_DIS pin
VSENSE<4V, 1.5A<Iout<25A
ISENSE= 10% of ISENSE max
(see Figure 4.)
5
20
µs
Delay response time
tDSENSE2H from rising edge of
INPUT pin
VSENSE<4V, 1.5A<Iout<25A
ISENSE= 90% of ISENSE max
(see Figure 4.)
270
500
µs
Delay response time
between rising edge
∆tDSENSE2H of output current and
rising edge of current
sense
VSENSE < 4V,
ISENSE = 90% of ISENSEMAX,
IOUT = 90% of IOUTMAX
IOUTMAX=15A (see Figure 5)
310
µs
Delay response time
tDSENSE2L from falling edge of
INPUT pin
VSENSE<4V, 1.5A<Iout<25A
ISENSE=10% of ISENSE max
(see Figure 4.)
250
µs
100
1. Parameter guaranteed by design; it is not tested.
Figure 4.
Current sense delay characteristics
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
tDSENSE2H
12/31
tDSENSE1L
tDSENSE1H
tDSENSE2L
VN5010AK-E
Electrical specifications
Figure 5.
Delay response time between rising edge of ouput current and rising
edge of Current Sense (CS enabled)
VIN
∆tDSENSE2H
t
IOUT
IOUTMAX
90% IOUTMAX
t
ISENSE
ISENSEMAX
90% ISENSEMAX
t
13/31
Electrical specifications
Figure 6.
VN5010AK-E
IOUT/ISENSE vs. IOUT (see Table 10. for details)
IOUT/ISENSE
6000
max Tj = -40°C to 150°C
5500
5000
max Tj= 25°C to 150°C
typical value
4500
min Tj= 25°C to 150°C
4000
min Tj= -40°C to 150°C
3500
3000
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
IOUT (A)
Figure 7.
Maximum current sense ratio drift vs load current
dk/k(%)
15
10
5
0
-5
-10
-15
5
10
15
IOUT (A)
Note:
14/31
Parameter guaranteed by design; it is not tested.
20
25
22
23
24
25
VN5010AK-E
Electrical specifications
Table 11.
Truth table
Input
Output
Sense (VCSD=0V) (1)
Normal operation
L
H
L
H
0
Nominal
Overtemperature
L
H
L
L
0
VSENSEH
Undervoltage
L
H
L
L
0
0
Short circuit to GND
(Rsc ≤10 mΩ)
L
H
H
L
L
L
0
0 if Tj < TTSD
VSENSEH if Tj > TTSD
Short circuit to VCC
L
H
H
H
0
< Nominal
Negative output voltage clamp
L
L
0
Conditions
1. If the VCSD is high, the SENSE output is at a high impedance, its potential depends on leakage currents
and external circuit.
Figure 8.
Switching characteristics
VOUT
tWoff
tWon
90%
80%
dVOUT/dt(off)
dVOUT/dt(on)
10%
tr
tf
t
INPUT
td(on)
td(off)
t
Figure 9.
Output voltage drop limitation
Vcc-Vout
Tj=150oC
Tj=25oC
Tj=-40oC
Von
Iout
Von/Ron(T)
15/31
Electrical specifications
Table 12.
ISO 7637-2:
2004(E)
VN5010AK-E
Electrical transient requirements
Test levels (1)
Test pulse
III
IV
Number of
pulses or
test times
1
-75V
-100V
5000 pulses
0.5 s
5s
2 ms, 10 Ω
2a
+37V
+50V
5000 pulses
0.2 s
5s
50 µs, 2 Ω
3a
-100V
-150V
1h
90 ms
100 ms
0.1 µs, 50 Ω
3b
+75V
+100V
1h
90 ms
100 ms
0.1 µs, 50 Ω
4
-6V
-7V
1 pulse
100 ms, 0.01Ω
5b (2)
+65V
+87V
1 pulse
400 ms, 2 Ω
Burst cycle/pulse
repetition time
Delays and
impedance
Test level results(1)
ISO 7637-2:
2004(E)
Test pulse
III
IV
1
C
C
2a
C
C
3a
C
C
3b
C
C
4
C
C
5b (2)
C
C
1. The above test levels must be considered referred to VCC = 13.5V except for pulse 5b.
2. Valid in case of external load dump clamp: 40V maximum referred to ground.
16/31
Class
Contents
C
All functions of the device are performed as designed after exposure to disturbance.
E
One or more functions of the device are not performed as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
VN5010AK-E
Electrical specifications
Figure 10. Waveforms
NORMAL OPERATION
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
UNDERVOLTAGE
VUSDhyst
VCC
VUSD
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
SHORT TO VCC
INPUT
CS_DIS
LOAD VOLTAGE
LOAD CURRENT
SENSE CURRENT
<Nominal
<Nominal
OVERLOAD OPERATION
Tj
TR
TTSD
TRS
INPUT
CS_DIS
ILIMH
ILIML
LOAD CURRENT
VSENSEH
SENSE CURRENT
current power
limitation limitation
thermal cycling
SHORTED LOAD
NORMAL LOAD
17/31
Electrical specifications
2.3
VN5010AK-E
Electrical characteristics curves
Figure 11. Off State output current
Figure 12. High level input current
Iloff (uA)
Iih (uA)
5
0.7
4.5
0.6
0.5
Vin=2.1V
4
Off state
Vcc=13V
Vin=Vout=0V
3.5
3
0.4
2.5
0.3
2
1.5
0.2
1
0.1
0.5
0
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
Tc (°C )
50
75
100
125
150
175
100
125
150
175
150
175
Tc (°C )
Figure 13. Input clamp voltage
Figure 14. Input low level
Vicl (V)
Vil (V)
7
2
6.8
1.8
Iin=1mA
6.6
1.6
6.4
1.4
6.2
1.2
6
1
5.8
0.8
5.6
0.6
5.4
0.4
5.2
0.2
5
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
Tc (°C )
50
75
Tc (°C )
Figure 15. Input high level
Figure 16. Input hysteresis voltage
Vih (V)
Vihyst (V)
4
1
0.9
3.5
0.8
3
0.7
2.5
0.6
2
0.5
0.4
1.5
0.3
1
0.2
0.5
0.1
0
0
-50
-25
0
25
50
75
Tc (°C )
18/31
100
125
150
175
-50
-25
0
25
50
75
Tc (°C )
100
125
VN5010AK-E
Electrical specifications
Figure 17. On state resistance vs. Tcase
Figure 18. On state resistance vs. VCC
R on (mOhm)
R on (mOhm)
50
20
18
45
Iout=6A
Vcc=13V
40
16
35
14
30
12
25
10
20
8
15
6
10
4
5
2
Tc=150°C
Tc=125°C
Tc=25°C
Tc=-40°C
0
0
-50
-25
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
40
Vcc (V)
Tc (°C )
Figure 19. Undervoltage shutdown
Figure 20. Turn-On voltage slope
Vusd (V)
dVout/dt(on) (V/ms)
16
1000
900
14
Vcc=13V
RI=2.6Ohm
800
12
700
10
600
8
500
400
6
300
4
200
2
100
0
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
Tc (°C )
50
75
100
125
150
175
150
175
Tc (°C )
Figure 21. ILIMH vs. Tcase
Figure 22. Turn-Off voltage slope
Ilimh (A)
dVout/dt(off) (V/ms)
80
1000
900
75
Vcc=13V
Vcc=13V
RI=2.6Ohm
800
70
700
65
600
60
500
400
55
300
50
200
45
100
40
0
-50
-25
0
25
50
75
Tc (°C )
100
125
150
175
-50
-25
0
25
50
75
100
125
Tc (°C )
19/31
Electrical specifications
VN5010AK-E
Figure 23. CS_DIS high level voltage
Figure 24. CS_DIS clamp voltage
Vcsdh (V)
Vcsdcl (V)
4
8
3.5
7.5
3
7
2.5
6.5
2
6
1.5
5.5
1
5
0.5
4.5
Icsd=1mA
0
4
-50
-25
0
25
50
75
100
125
150
175
Tc (°C )
Vcsdl (V)
4
3.5
3
2.5
2
1.5
1
0.5
0
-25
0
25
50
75
Tc (°C )
20/31
-25
0
25
50
75
Tc (°C )
Figure 25. CS_DIS low level voltage
-50
-50
100
125
150
175
100
125
150
175
VN5010AK-E
3
Application information
Application information
Figure 26. Application schematic
+5V
VCC
Rprot
CS_DIS
Dld
Rprot
mC
IINPUT
OUTPUT
Rprot
CURRENT SENSE
GND
RSENSE
Cext
VGND
RGND
DGND
3.1
GND protection network against reverse battery
3.1.1
Solution 1 : resistor in the ground line (RGND only)
This can be used with any type of load.
The following is an indication on how to dimension the RGND resistor.
1.
RGND ≤600mV / (IS(on)max).
2.
RGND ≥ (−VCC) / (-IGND)
where -IGND is the DC reverse ground pin current and can be found in the absolute
maximum rating section of the device datasheet.
Power Dissipation in RGND (when VCC<0: during reverse battery situations) is:
PD= (-VCC)2/ RGND
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
RGND will produce a shift (IS(on)max * RGND) in the input thresholds and the status output
values. This shift will vary depending on how many devices are ON in the case of several
high side drivers sharing the same RGND.
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
21/31
Application information
3.1.2
VN5010AK-E
Solution 2 : diode (DGND) in the ground line
A resistor (RGND=1kΩ) should be inserted in parallel to DGND if the device drives an
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift (≈ 600mV) in the input
threshold and in the status output values if the microprocessor ground is not common to the
device ground. This shift will not vary if more
than one HSD shares the same diode/resistor
.
network.
3.2
Load dump protection
Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
VCC max DC rating. The same applies if the device is subject to transients on the VCC line
that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
3.3
MCU I/Os protection
If a ground protection network is used and negative transient are present on the VCC line,
the control pins will be pulled negative. ST suggests to insert a resistor (Rprot) in line to
prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of µC and the
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC
I/Os.
-VCCpeak/Ilatchup ≤Rprot ≤(VOHµC-VIH-VGND) / IIHmax
Calculation example:
For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V
5kΩ ≤Rprot ≤180kΩ
Recommended values: Rprot =10kΩ, CEXT=10nF.
22/31
VN5010AK-E
3.4
Application information
Maximum demagnetization energy (VCC=13.5V)
Figure 27. Maximum turn Off current versus load inductance
100
B
A
C
I (A)
10
1
0,1
1
L (mH)
10
100
A: Tjstart = 150°C single pulse
B: Tjstart = 100°C repetitive pulse
C: Tjstart = 125°C repetitive pulse
VIN, IL
Demagnetization
Demagnetization
Demagnetization
t
Note:
Values are generated with RL=0 Ω.
In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse
must not exceed the temperature specified above for curves B and C.
23/31
Package and PCB thermal data
VN5010AK-E
4
Package and PCB thermal data
4.1
PowerSSO-24TM thermal data
Figure 28. PowerSSO-24TM PC board
Note:
Layout condition of Rth and Zth measurements (PCB: Double layer, Thermal Vias, FR4
area= 77mm x 86mm, PCB thickness=1.6mm, Cu thickness=70µm (front and back side),
Copper areas: from minimum pad lay-out to 8cm2).
Figure 29. Rthj-amb Vs. PCB copper area in open box free air condition
RTHj_amb(°C/W)
55
50
45
40
35
30
0
2
4
6
PCB Cu heatsink area (cm^2)
24/31
8
10
VN5010AK-E
Package and PCB thermal data
Figure 30. PowerSSO-24TM thermal impedance junction ambient single pulse
ZTH (°C/W)
1000
100
Footprint
2 cm2
8 cm2
10
1
0,1
0,01
1E-04 0,001
0,01
0,1
1
10
100
1000
Time (s)
Equation 1: pulse calculation formula
Z
THδ
= R
TH
⋅ δ+Z
THtp
( 1 – δ)
where δ = tP/T
Figure 31. Thermal fitting model of a double channel HSD in PowerSSO-24TM(a)
a. The fitting model is a semplified thermal tool and is valid for transient evolutions where the embedded
protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
25/31
Package and PCB thermal data
Table 13.
26/31
VN5010AK-E
Thermal parameters
Area/island (cm2)
Footprint
R1 (°C/W)
0.08
R2 (°C/W)
0.16
R3 (°C/W)
6
R4 (°C/W)
7.7
R5 (°C/W)
2
8
9
9
8
R6 (°C/W)
28
17
10
C1 (W.s/°C)
0.002
C2 (W.s/°C)
0.002
C3 (W.s/°C)
0.025
C4 (W.s/°C)
0.75
C5 (W.s/°C)
1
4
9
C6 (W.s/°C)
2.2
5
17
VN5010AK-E
Package and packing information
5
Package and packing information
5.1
ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second-level interconnect. The category of
Second-Level Interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label.
ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
Figure 32. PowerSSO-24™ package dimensions
27/31
Package and packing information
Table 14.
VN5010AK-E
PowerSSO-24™ mechanical data
Millimeters
Symbol
Min.
Max.
A
2.15
2.47
A2
2.15
2.40
a1
0
0.075
b
0.33
0.51
c
0.23
0.32
D
10.10
10.50
E
7.4
7.6
e
0.8
e3
8.8
G
0.1
G1
0.06
H
10.1
h
L
10.5
0.4
0.55
N
28/31
Typ.
0.85
10deg
X
4.1
4.7
Y
6.5
7.1
VN5010AK-E
5.2
Package and packing information
Packing information
Figure 33. PowerSSO-24TM tube shipment (no suffix)
Base Q.ty
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
C
B
49
1225
532
3.5
13.8
0.6
All dimensions are in mm.
A
Figure 34. PowerSSO-24TM tape and reel shipment (suffix “TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
1000
1000
330
1.5
13
20.2
24.4
100
30.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (± 0.1)
P
D (± 0.05)
D1 (min)
F (± 0.1)
K (max)
P1 (± 0.1)
24
4
12
1.55
1.5
11.5
2.85
2
End
All dimensions are in mm.
Start
Top
cover
tape
No components
Components
No components
500mm min
Empty components pockets
saled with cover tape.
500mm min
User direction of feed
29/31
Revision history
6
VN5010AK-E
Revision history
Table 15.
30/31
Document revision history
Date
Revision
Changes
24-Jan-2006
1
Initial release.
09-Feb-2007
2
Reformatted and restructured.
Added Contents, List of tables and List of figures.
Added Section 3.4: Maximum demagnetization energy (VCC=13.5V).
13-Dec-2007
3
Document reformatted and restructured.
Table 4: Absolute maximum ratings : corrected EMAX value from 506
to 609 mJ.
Updated Table 10: Current sense (8V<VCC<16V) :
– changed tDSENSE2H max value from 600 to 500 µs.
– added dk1/k1, dk2/k2, dk3/k3, ∆tDSENSE2H, IOL parameters.
Added Figure 5: Delay response time between rising edge of ouput
current and rising edge of Current Sense (CS enabled).
Updated Figure 6: IOUT/ISENSE vs. IOUT (see Table 10. for
details).
Added Figure 7: Maximum current sense ratio drift vs load current.
Table 12: Electrical transient requirements : updated test level values
III and IV for test pulse 5b and notes.
Figure 31: Thermal fitting model of a double channel HSD in
PowerSSO-24TM: added note.
12-Feb-2008
4
Corrected typing error in Table 10: Current sense (8V<VCC<16V) :
changed IOL test condition from VIN = 0V to VIN = 5V.
VN5010AK-E
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31/31