RVN5E010MH - STMicroelectronics

RVN5E010MH
Single-channel high-side driver with analog current sense
Datasheet - production data
Features
Max supply voltage
VCC
Operating voltage range
VCC 4.5 V to 28 V
Typ. ON-state resistance
RON
10 mΩ
Current limitation (typ)
ILIMH
85 A
IS
2 μA(1)
OFF-state supply current
41 V
1. Typical value with all loads connected.
 General
– Inrush current active management by
power limitation
– Very low standby current
– 3 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– Compliant with European directive
2002/95/EC
– Very low current sense leakage
 Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
current range
– Current sense disable
– Output short to ground indication
– Overload and short to ground (power
limitation) indication
– Thermal shutdown indication
– Load current limitation
– Self-limiting of fast thermal transients
– Protection against loss of ground and loss
of VCC
– Overtemperature shutdown with autorestart (thermal shutdown)
– Reverse battery protection with self switch
on of the Power MOSFET
– Electrostatic discharge protection
 Aerospace and Defense features
– Dedicated traceability and part marking
– Production parts approval documents
available
– Adapted Extended life time and
obsolescence management
– Extended Product Change Notification
process
– Designed and manufactured to meet sub
ppm quality goals
– Advanced mold and frame designs for
Superior resilience to harsh environment
(acceleration, EMI, thermal, humidity)
– Single Fabrication, Assembly and Test site
– Dual internal production source capability
Application
 All types of resistive, inductive and capacitive
loads in Aerospace and Defense applications
 Protections
– Undervoltage shutdown
– Overvoltage clamp
September 2014
This is information on a product in full production.
DocID026754 Rev 2
1/35
www.st.com
Contents
RVN5E010MH
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
Block diagram and pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
3.1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.4
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.5
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.6
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.7
Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.8
MCU I/Os protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.9
Current sense and diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.10
Maximum demagnetization energy (VCC = 13.5 V) . . . . . . . . . . . . . . . . . 25
Package and PC board thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
4.1
5
HPAK thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
5.1
ECOPACK® . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
5.2
HPAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
5.3
HPAK suggested land pattern . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
5.4
Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
6
Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
2/35
DocID026754 Rev 2
RVN5E010MH
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Pin functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 7
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Power section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Switching (VCC = 13 V, Tj = 25 °C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Logic inputs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Protection and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Current sense (8 V < VCC < 18 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Electrical transient requirements (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Electrical transient requirements (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Electrical transient requirements (part 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
HPAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Document revision history. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
DocID026754 Rev 2
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3
List of figures
RVN5E010MH
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Figure 33.
Figure 34.
Figure 35.
Figure 36.
Figure 37.
Figure 38.
Figure 39.
4/35
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Configuration diagram (top view) not in scale. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Current sense delay characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Switching characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Delay response time between rising edge of ouput current and rising edge
of current sense (CS enabled) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Output voltage drop limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
IOUT/ISENSE vs. IOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Maximum current sense ratio drift vs. load current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Normal operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Overload or short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Intermittent overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
TJ evolution in overload or short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
OFF-state output current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
High-level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Low-level input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
High-level input voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
ON-state resistance vs. Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
ON-state resistance vs. VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Undervoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
ILIMH vs. Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
High-level CS_DIS voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
CS_DIS clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Low-level CS_DIS voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Current sense and diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Maximum turn-off current versus inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
PC board. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Rthj-amb vs. PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . . 26
HPAK thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Thermal fitting model of a single-channel HSD in HPAK . . . . . . . . . . . . . . . . . . . . . . . . . . 27
HPAK package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
HPAK suggested pad layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
HPAK tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
HPAK tape and reel (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
DocID026754 Rev 2
RVN5E010MH
1
Description
Description
The RVN5E010MH is a single-channel high-side driver manufactured using ST proprietary
VIPower® M0-5 technology and housed in HPAK package. The device is designed to drive
12 V grounded loads delivering protection, diagnostics and easy 3 V and 5 V CMOS
compatible interface with any microcontroller.
The device integrates advanced protective functions such as load current limitation, inrush
and overload active management by power limitation, overtemperature shut-off with autorestart and overvoltage active clamp.
A dedicated analog current sense pin is associated with every output channel in order to
provide enhanced diagnostic functions including fast detection of overload and short-circuit
to ground through power limitation indication and overtemperature indication.
The current sensing and diagnostic feedback of the whole device can be disabled by pulling
the CS_DIS pin high to share the external sense resistor with similar devices.
DocID026754 Rev 2
5/35
34
Block diagram and pin configuration
2
RVN5E010MH
Block diagram and pin configuration
Figure 1. Block diagram
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Table 1. Pin functions
Name
Function
VCC
Battery connection
OUT
Power output (1)
GND
Ground connection
IN
Voltage controlled input pin with hysteresis, CMOS compatible. It controls
output switch state.
CS
Analog current sense pin, it delivers a current proportional to the load current.
CS_DIS
Active high CMOS compatible pin, to disable the current sense pin.
1. Pins 1 and 7 must be externally tied together.
6/35
DocID026754 Rev 2
RVN5E010MH
Block diagram and pin configuration
Figure 2. Configuration diagram (top view) not in scale
Table 2. Suggested connections for unused and not connected pins
Connection / pin
CS
OUT
IN
CS_DIS
Floating
Not allowed
X
X
X
To ground
Through 1k
resistor
Through 22 k
resistor
Through 10 k
resistor
Through 10 k
resistor
DocID026754 Rev 2
7/35
34
Electrical specifications
3
RVN5E010MH
Electrical specifications
Figure 3. Current and voltage conventions
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3.1
Absolute maximum ratings
Stressing the device above the rating listed in Table 3: Absolute maximum ratings may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 3. Absolute maximum ratings
Symbol
Parameter
Unit
VCC
DC supply voltage
41
V
-VCC
Reverse DC supply voltage
16
V
IOUT
DC output current
Internally limited
A
-IOUT
Reverse DC output current
20
A
DC input current
-1 to 10
mA
DC current sense disable input current
-1 to 10
mA
VCC - 41
V
+VCC
V
645
mJ
IIN
ICSD
VCSENSE Current sense maximum voltage (VCC > 0)
EMAX
8/35
Value
Maximum switching energy (single pulse)
(L = 2.2 mH; RL = 0Ω; VBAT = 13.5 V; Tjstart = 150 °C;
IOUT = IlimL(Typ.))
DocID026754 Rev 2
RVN5E010MH
Electrical specifications
Table 3. Absolute maximum ratings (continued)
Symbol
Value
Unit
VESD
Electrostatic discharge
(human body model: R = 1.5 kΩ C = 100 pF)
– IN
– CS
– CS_DIS
– OUT
– VCC
4000
2000
4000
5000
5000
V
V
V
V
V
VESD
Charge device model (CDM-AEC-Q100-011)
750
V
Junction operating temperature
-40 to 150
°C
Storage temperature
-55 to 150
°C
Tj
Tstg
3.2
Parameter
Thermal data
Table 4. Thermal data
Symbol
Parameter
Max. value
Unit
Rthj-case
Thermal resistance junction-case
0.55
°C/W
Rthj-amb
Thermal resistance junction-ambient
67.7
°C/W
DocID026754 Rev 2
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34
Electrical specifications
3.3
RVN5E010MH
Electrical characteristics
Values specified in this section are for 8 V < VCC < 28 V; -40 °C < Tj < 150 °C, unless
otherwise specified.
Table 5. Power section
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VCC
Operating supply voltage
4.5
13
28
V
VUSD
Undervoltage shutdown
3.5
4.5
V
VUSDhyst
Undervoltage shutdown
hysteresis
0.5
IOUT = 6 A; Tj = 25 °C
RON
RON-Rev
Vclamp
IS
IL(off)
ON-state resistance
10
IOUT = 6 A; Tj = 150 °C
20
IOUT = 6 A; VCC = 5 V; Tj = 25 °C
13
RDSON in reverse battery
condition
VCC = -13 V; IOUT = -6 A;
Tj = 25 °C
Clamp voltage
ICC = 20 mA; IOUT = 0 A
10
41
OFF-state: VCC = 13 V; Tj = 25 °C;
VIN = VOUT = VSENSE = 0 V
Supply current
ON-state: VCC = 13 V; VIN = 5 V;
IOUT = 0 A
OFF-state output current
V
VIN = VOUT = 0 V; VCC = 13 V;
Tj = 25 °C
0
VIN = VOUT = 0 V; VCC = 13 V;
Tj = 125 °C
0
mΩ
mΩ
46
52
V
2
5
μA
1.5
3
mA
0.01
3
μA
5
Table 6. Switching (VCC = 13 V, Tj = 25 °C)
Symbol
10/35
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
RL = 2.2 Ω(see Figure 5)
—
40
—
μs
td(off)
Turn-off delay time
RL = 2.2 Ω(see Figure 5)
—
28
—
μs
(dVOUT/dt)on
Turn-on voltage
slope
RL = 2.2 Ω
—
(see
Figure 23)
—
Vμs
(dVOUT/dt)off
Turn-off voltage
slope
RL = 2.2 Ω
—
(see
Figure 25)
—
Vμs
WON
Switching energy
losses at turn-on
(twon)
RL = 2.2 Ω(see Figure 5)
—
2
—
mJ
WOFF
Switching energy
losses at turn-off
(twoff)
RL = 2.2 Ω(see Figure 5)
—
0.6
—
mJ
DocID026754 Rev 2
RVN5E010MH
Electrical specifications
Table 7. Logic inputs
Symbol
Parameter
Test conditions
VIL
Low-level input voltage
IIL
Low-level input current
VIH
High-level input voltage
IIH
High-level input current
VI(hyst)
Input hysteresis voltage
VICL
Min.
VIN = 0.9 V
Low-level CS_DIS voltage
ICSDL
Low-level CS_DIS current
VCSDH
High-level CS_DIS voltage
ICSDH
High-level CS_DIS current
CS_DIS clamp voltage
a
V
2.1
V
0.25
V
5.5
7
-0.7
0.9
VCSD = 0.9 V
V
V
1
μA
2.1
V
VCSD = 2.1 V
10
0.25
ICSD = 1 mA
μA
V
5.5
ICSD = -1 mA
μA
7
-0.7
V
Table 8. Protection and diagnostics
Symbol
Parameter
Test conditions
VCC = 13 V
IlimH
Short-circuit current
IlimL
Short-circuit current
VCC = 13 V; TR < Tj < TTSD
during thermal cycling
TTSD
Shutdown
temperature
TR
Reset temperature
TRS
Thermal reset of
status
THYST
VDEMAG
VON
Note:
0.9
10
VCSD(hyst) CS_DIS hysteresis voltage
VCSCL
Unit
μA
IIN = -1 mA
VCSDL
Max.
1
VIN = 2.1 V
IIN = 1 mA
Input clamp voltage
Typ.
Typ.
Max.
60
85
120
5 V < VCC < 28 V
120
21
150
175
TRS + 1
TRS + 5
Turn-off output voltage IOUT = 2 A; VIN = 0;
clamp
L = 6 mH
IOUT = 0.5 A;
Tj = -40 °C to 150 °C
Unit
A
A
200
135
Thermal hysteresis
(TTSD-TR)
Output voltage drop
limitation
Min.
°C
°C
°C
7
°C
VCC - 41 VCC - 46 VCC - 52
V
25
mV
To ensure long term reliability under heavy overload or short-circuit conditions, protection
and related diagnostic signals must be used together with a proper software strategy. If the
device is subjected to abnormal conditions, this software must limit the duration and number
of activation cycles.
DocID026754 Rev 2
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34
Electrical specifications
RVN5E010MH
Table 9. Current sense (8 V < VCC < 18 V)
Symbol
Parameter
Test conditions
Min.
Typ.
K0
IOUT/ISENSE
IOUT = 0.25 A; VSENSE = 0.5 V
Tj = -40 °C to 150 °C
Tj = 25 °C to 150 °C
3000
3000
7410 12000
7410 11600
K1
IOUT/ISENSE
IOUT = 6 A; VSENSE = 0.5 V
Tj = -40 °C to 150 °C
Tj = 25 °C to 150 °C
5350
5510
6740
6740
dK1/K1(1)
K2
dK2/K2(1)
K3
dK3/K3(1)
ISENSE0
IOUT = 6 A; VSENSE = 0.5 V;
Current sense ratio drift VCSD = 0 V;
Tj = -40 °C to 150 °C
IOUT = 10 A; VSENSE = 4 V;
Tj = -40 °C to 150 °C
Tj = 25 °C to 150 °C
IOUT/ISENSE
IOUT = 10 A; VSENSE = 4 V;
Current sense ratio drift VCSD = 0 V;
Tj = -40 °C to 150 °C
IOUT = 25 A; VSENSE = 4 V;
Tj = -40 °C to 150 °C
Tj = 25 °C to 150 °C
IOUT/ISENSE
IOUT = 25 A; VSENSE = 4 V;
Current sense ratio drift VCSD = 0 V;
Tj = -40 °C to 150 °C
Analog sense leakage
current
-15
5850
5800
6570
6570
-11
5915
5850
IOL
VSENSE
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6420
6420
Unit
8500
7745
15
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7000
6755
-8
8
IOUT = 0 A; VSENSE = 0 V;
VCSD = 5 V; VIN = 0 V;
Tj = -40 °C to 150 °C
0
1
IOUT = 0 A; VSENSE = 0 V;
VCSD = 0 V; VIN= 5 V;
Tj = -40 °C to 150 °C
0
2
IOUT = 2 A; VSENSE = 0 V;
VCSD = 5 V; VIN = 5 V;
Tj = -40 °C to 150 °C
12/35
Max.
%
μA
1
Open load ON-state
current detection
threshold
VIN = 5 V, 8 V < VCC < 18 V;
ISENSE = 5 μA
5
Max analog sense
output voltage
IOUT = 18 A; RSENSE = 3.9 kΩ
5
80
mA
V
VSENSEH(2)
Analog sense output
V = 13 V; RSENSE = 3.9 kΩ
voltage in fault condition CC
8
V
ISENSEH(2)
Analog sense output
current in fault
condition
VCC = 13 V; VSENSE = 5 V
9
mA
tDSENSE1H
Delay response time
from falling edge of
CS_DIS pin
VSENSE < 4 V,
1.5 A < IOUT < 25 A;
ISENSE = 90% of ISENSE MAX
(see Figure 4)
50
DocID026754 Rev 2
100
μs
RVN5E010MH
Electrical specifications
Table 9. Current sense (8 V < VCC < 18 V) (continued)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
tDSENSE1L
Delay response time
from rising edge of
CS_DIS pin
VSENSE < 4 V;
1.5 A < IOUT < 25 A;
ISENSE = 10% of ISENSE MAX
(see Figure 4)
5
20
μs
tDSENSE2H
Delay response time
from rising edge of
IN pin
VSENSE < 4 V,
1.5 A < IOUT < 25 A;
ISENSE = 90% of ISENSE max
(see Figure 4)
270
600
μs
310
μs
250
μs
Delay response time
between rising edge of
tDSENSE2H
output current and rising
edge of current sense
tDSENSE2L
Delay response time
from falling edge of
IN pin
VSENSE < 4V,
ISENSE = 90% of ISENSEMAX;
IOUT = 90% of IOUTMAX;
IOUTMAX = 3 A (see Figure 6)
VSENSE < 4 V;
1.5 A < IOUT < 25 A;
ISENSE = 10% of ISENSE max
(see fig Figure 4)
100
1. Parameter guaranteed by design, it is not tested.
2. Fault condition includes: power limitation and overtemperature.
Figure 4. Current sense delay characteristics
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Electrical specifications
RVN5E010MH
Figure 5. Switching characteristics
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Figure 6. Delay response time between rising edge of ouput current and rising edge
of current sense (CS enabled)
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Electrical specifications
Figure 7. Output voltage drop limitation
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Figure 8. IOUT/ISENSE vs. IOUT
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Electrical specifications
RVN5E010MH
Figure 9. Maximum current sense ratio drift vs. load current
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Parameter guaranteed by design (Figure 9); it is not tested.
Table 10. Truth table
Input
Output
SENSE (VCSD = 0 V)(1)
Normal operation
L
H
L
H
0
Nominal
Overtemperature
L
H
L
L
0
VSENSEH
Undervoltage
L
H
L
L
0
0
H
X
(no power limitation)
Cycling
(power limitation)
Nominal
Conditions
Overload
H
VSENSEH
Short-circuit to GND
(power limitation)
L
H
L
L
0
VSENSEH
Negative output voltage
clamp
L
L
0
1. If the VCSD is high, the SENSE output is at a high-impedance, its potential depends on leakage currents
and external circuit.
16/35
DocID026754 Rev 2
RVN5E010MH
Electrical specifications
Table 11. Electrical transient requirements (part 1)
ISO 7637-2:
2004(E)
Test pulse
Test levels(1)
III
IV
1
-75 V
-100 V
2a
+37 V
3a
Number of
pulses or
test times
Burst cycle/pulse
repetition time
Delays and
impedance
Min.
Max.
5000 pulses
0.5 s
5s
2 ms, 10 Ω
+50 V
5000 pulses
0.2 s
5s
50 μs, 2 Ω
-100 V
-150 V
1h
90 ms
100 ms
0.1μs, 50 Ω
3b
+75 V
+100 V
1h
90 ms
100 ms
0.1μs, 50 Ω
4
-6 V
-7 V
1 pulse
100 ms, 0.01 Ω
5b(2)
+65 V
+87 V
1 pulse
400 ms, 2 Ω
1. The above test levels must be considered referred to VCC = 13.5 V except for pulse 5b.
2. Valid in case of external load dump clamp: 40 V maximum referred to ground.
Table 12. Electrical transient requirements (part 2)
ISO 7637-2:
2004(E)
Test level results
Test pulse
III
IV
1
C
C
2a
C
C
3a
C
C
3b
C
C
4
C
C
5b(1)
C
C
1. Valid in case of external load dump clamp: 40 V maximum referred to ground.
Table 13. Electrical transient requirements (part 3)
Class
Contents
C
All functions of the device are performed as designed after exposure to disturbance.
E
One or more functions of the device are not performed as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
DocID026754 Rev 2
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Electrical specifications
3.4
RVN5E010MH
Waveforms
Figure 10. Normal operation
Figure 11. Overload or short to GND
18/35
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RVN5E010MH
Electrical specifications
Figure 12. Intermittent overload
Figure 13. TJ evolution in overload or short to GND
DocID026754 Rev 2
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Electrical specifications
3.5
RVN5E010MH
Electrical characteristics curves
Figure 14. OFF-state output current
Figure 15. High-level input current
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Figure 16. Input clamp voltage
Figure 17. Low-level input voltage
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Figure 18. High-level input voltage
Figure 19. Input hysteresis voltage
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DocID026754 Rev 2
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RVN5E010MH
Electrical specifications
Figure 20. ON-state resistance vs. Tcase
Figure 21. ON-state resistance vs. VCC
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Figure 22. Undervoltage shutdown
Figure 23. Turn-on voltage slope
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Figure 24. ILIMH vs. Tcase
Figure 25. Turn-off voltage slope
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34
Electrical specifications
RVN5E010MH
Figure 26. High-level CS_DIS voltage
Figure 27. CS_DIS clamp voltage
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DocID026754 Rev 2
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RVN5E010MH
3.6
Electrical specifications
Application information
Figure 29. Application schematic
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3.7
Load dump protection
Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
VCC max DC rating. The same applies if the device is subject to transients on the VCC line
that are greater than the ones shown in the ISO 7637-2 2004 (E) table.
3.8
MCU I/Os protection
When negative transients are present on the VCC line, the control pins are pulled negative to
approximately -1.5 V. ST suggests to insert a resistor (Rprot) in line to prevent the
microcontroller I/O pins from latching-up.
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (input levels compatibility) with the latch-up limit of
microcontroller I/Os.
Equation 1
-VCCpeak / Ilatchup  Rprot  (VOHC - VIH ) / IIHmax
Calculation example:
For VCCpeak = - 1.5 V; Ilatchup  20 mA; VOHC 
 4.5 V
75 Ω 
 Rprot 
 240 kΩ
Recommended values: Rprot = 10 kΩCEXT = 10 nF.
DocID026754 Rev 2
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34
Electrical specifications
3.9
RVN5E010MH
Current sense and diagnostic
The current sense pin performs a double function (see Figure 30: Current sense and
diagnostic):

Current mirror of the load current in normal operation, delivering a current
proportional to the load current according to a known ratio KX.
The current ISENSE can be easily converted to a voltage VSENSE by means of an
external resistor RSENSE. Linearity between IOUT and VSENSE is ensured up to 5 V
minimum (see parameter VSENSE in Table 9: Current sense (8 V < VCC < 18 V)). The
current sense accuracy depends on the output current (refer to current sense electrical
characteristics Table 9: Current sense (8 V < VCC < 18 V)).

Diagnostic flag in fault conditions, delivering a fixed voltage VSENSEH up to a
maximum current ISENSEH in case of the following fault conditions (refer to
Table 10: Truth table):
–
–
Power limitation activation
Overtemperature
A logic level high on the CS_DIS simultaneously sets all the current sense pins of the device
in a high-impedance state, thus disabling the current monitoring and diagnostic detection.
This feature allows multiplexing of the microcontroller analog inputs by sharing the sense
resistance and ADC line among different devices.
Figure 30. Current sense and diagnostic
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3.10
Electrical specifications
Maximum demagnetization energy (VCC = 13.5 V)
Figure 31. Maximum turn-off current versus inductance
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In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed
the temperature specified above for curves A and B.
DocID026754 Rev 2
25/35
34
Package and PC board thermal data
RVN5E010MH
4
Package and PC board thermal data
4.1
HPAK thermal data
Figure 32. PC board
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1. Layout condition of Rth and Zth measurements (PCB FR4 area = 58 mm x 58 mm,
PCB thickness =1.8 mm, Cu thickness = 70 μm, Copper areas: from minimum pad lay-out to 8 cm2).
Figure 33. Rthj-amb vs. PCB copper area in open box free air condition
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26/35
DocID026754 Rev 2
RVN5E010MH
Package and PC board thermal data
Figure 34. HPAK thermal impedance junction ambient single pulse
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1. The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded
protection functions (power limitation or thermal cycling during thermal shutdown) are not triggered.
Equation 2: pulse calculation formula
Z TH = R TH   + Z THtp  1 –  
where  = tP/T
DocID026754 Rev 2
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34
Package and PC board thermal data
RVN5E010MH
Table 14. Thermal parameter
2
28/35
Area/island (cm )
Footprint
4
8
R1 (°C/W)
0.01
R2 (°C/W)
0.15
R3 (°C/W)
0.5
R4 (°C/W)
8
R5 (°C/W)
28
22
12
R6 (°C/W)
31
25
16
C1 (W.s/°C)
0.005
C2 (W.s/°C)
0.05
C3 (W.s/°C)
0.1
C4 (W.s/°C)
0.4
C5 (W.s/°C)
0.8
1.4
3
C6 (W.s/°C)
3
6
9
DocID026754 Rev 2
RVN5E010MH
Package and packing information
5
Package and packing information
5.1
ECOPACK®
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
5.2
HPAK mechanical data
Figure 36. HPAK package dimension
("1($'5
DocID026754 Rev 2
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34
Package and packing information
RVN5E010MH
Table 15. HPAK mechanical data
Data book mm
Ref. dim
Min.
Max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.45
0.60
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
4.95
E
6.40
E1
5.00
e
5.10
5.25
6.60
5.20
5.40
0.85
e1
1.60
1.80
e2
3.30
3.50
e3
5.00
5.20
H
9.35
10.10
L
1.00
1.50
(L1)
2.60
2.80
3.00
L2
0.60
0.80
1.00
L4
0.60
R
V2
30/35
Nom.
1.00
0.20
0°
DocID026754 Rev 2
8°
RVN5E010MH
5.3
Package and packing information
HPAK suggested land pattern
Figure 37. HPAK suggested pad layout
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DocID026754 Rev 2
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34
Package and packing information
5.4
RVN5E010MH
Packing information
The devices can be packed in tube or tape and reel shipments (see Table 16: Device
summary).
Figure 38. HPAK tube shipment (no suffix)
$
Base q.ty
Bulk q.ty
Tube length (± 0.5)
A
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32/35
DocID026754 Rev 2
RVN5E010MH
6
Order codes
Order codes
Table 16. Device summary
Order codes
Package
6 pins HPAK
Tube
Tape and reel
RVN5E010MH
RVN5E010MHTR
DocID026754 Rev 2
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34
Revision history
7
RVN5E010MH
Revision history
Table 17. Document revision history
34/35
Date
Revision
Changes
25-Jul-2013
1
Initial release.
15-Sep-2014
2
Updated Features on page 1.
DocID026754 Rev 2
RVN5E010MH
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ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
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