UTC-IC 2SD1803L-TM3-T

UNISONIC TECHNOLOGIES CO.,
2SD1803
NPN EPITAXIAL SILICON TRANSISTOR
HIGH CURRENT SWITCHING
APPLICATION
DESCRIPTION
The UTC 2SD1803 applies to relay drivers, high-speed
inverters, converters ,and other general high-current switching
applications.
1
FEATURES
*Low collector-to-emitter saturation voltage.
*High current and high fT.
*Excellent linerarity of hFE.
*Fast switching time.
TO-251
*Pb-free plating product number:2SD1803L
PIN CONFIGURATION
PIN NO.
PIN NAME
1
BASE
2
COLLECTOR
3
EMITTER
ORDERING INFORMATION
Order Number
Normal
Lead free
2SD1803-TM3-T 2SD1803L-TM3-T
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,
Package
Packing
TO-251
Tube
1
QW-R213-007,B
2SD1803
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
PULSE
Tc=25℃
Power Dissipation
Ta=25℃
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
RATINGS
60
50
6
5
8
20
1
+150
-40 ~ +150
PD
Junction Temperature
Storage Temperature
TJ
TSTG
UNIT
V
V
V
A
A
W
W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
Turn-on Time
Storage Time
Fall Time
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
tON
tS
tF
TEST CONDITIONS
IC=10µA, IE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
VCB=40V, IE=0
VEB=4V, IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=4A
VCE=5V, Ic=1A
VCB=10V, f=1MHz
IC=3A, IB=0.15A
IC=3A, IB=0.15A
See Test Circuit
See Test Circuit
See Test Circuit
MIN
60
50
6
TYP
MAX
1
1
400
70
35
180
40
220
0.95
50
500
20
400
1.3
UNIT
V
V
V
µA
µA
MHz
pF
mV
V
ns
ns
ns
CLASSIFICATION OF hFE 1
RANK
RANGE
Q
70 ~ 140
R
100 ~ 200
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
S
140 ~ 280
T
200 ~ 400
2
QW-R213-007,B
2SD1803
NPN EPITAXIAL SILICON TRANSISTOR
TEST CIRCUIT
IB1
INPUT
RB
OUTPUT
IB2
RL
VR
50
+
100μ
+
470μ
25V
PW=20μS
Duty Cycle≦1%
-5V
Ic=10IB1 =-10IB2=2A
(Unit : (resistance : Ω, capacitance : F))
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3
QW-R213-007,B
2SD1803
TYPICAL CHARACTERICS
Ic -VCE
Ic -VCE
5
5
25mA
4
30mA
35mA
40mA
50mA 45mA
20mA
3
15mA
2
10mA
5mA
1
0
0
4
Colletcor Current, Ic (A)
Colletcor Current, Ic (A)
30mA
20mA
3
0.8
1.2
15mA
10mA
2
5mA
1
IB =0
0.4
25mA
1.6
IB =0
0
0
2.0
2
Collector to Emitter Voltage, VCE (V)
4
6
hFE -I c
Ta=75℃
2
Ta=25℃
0.2
0.4
0.8
0.6
1.0
Ta=75℃
3
2
100
Ta=25℃
7
5
Ta=-25℃
3
Ta=-25℃
1
V CE=2V
7
5
DC Current Gain, hFE
Colletcor Current, Ic (A)
VCE=2V
4
0
0
10
1000
5
3
8
Collector to Emitter Voltage, VCE (V)
Ic -VBE
6
2
10
2 3 5 7
5 7 0.01
0.1 2 3 5 71.0
1.2
2 3 5 7 10
Collector Current, IC (A)
Base to Emitter Voltage, V BE (V)
fT -I c
Cob -VcB
5
1000
VCE=5V
7
Output Capacitance, Cob (pF)
Gain-Bandwidth Product,fT -MHz
■
NPN EPITAXIAL SILICON TRANSISTOR
3
2
100
7
5
3
2
f=1MHz
3
2
100
7
5
3
2
10
2 3 5 7 0.1
2 3
5 7
1.0
2 3
5 7
10
Colletcor Current, Ic (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
10
5 7 1.0
2
3
5 7 10
2
3
5 7 100
Colletcor to Base Voltage, VCB (V)
4
QW-R213-007,B
2SD1803
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERICS(cont.)
VCE(sat) -Ic
VBE(sat) -Ic
10
Ic/IB=20
3
2
1000
7
5
3
2
Ta=75℃
100
7
5
3
2
Ta=25℃
Base to Emitter
Saturation Voltage, VBE(sat) (V)
Collector to Emitter
Saturation Voltage, VCE (sat) (mV)
5
5
3
2
Ta=-25℃
1.0
7
5
Ta=-25℃
10
5 70.01 2 3 5 7 0.1 2 3 5 7 1.0
Ic/IB=20
7
Ta=25℃
Ta=75℃
3
2 3 5 7 1.0 2 3 5 7 10
5 7 0.01 2 3 5 7
0.1
2 3 5 710
Collector Current, IC (A)
Collector Current, IC (A)
PD -Ta
Ic
DC
100ms
℃
25
c=
℃
25
a=
nT
t io
ra
pe
O
nT
tio
ra
pe
O
C
0.1
7
5
3
2 Tc=25℃
0.01
0.1 2 3 5 7 1.0
24
1ms
Power Dissipation, PD (W)
10ms
Icp
D
Collector Current, IC (A)
ASO
2
10
7
5
3
2
1.0
7
5
3
2
20
16
12
8
4
No heat sink
2 3
5 7 10
2 3 5 7100
Colletcor to Emitter Voltage, VCE (V)
1
00
20
40
60
80
100
120
140 160
Ambient Temperature, Ta (℃)
UTC assum es no responsibility for equipm ent failures that result from using products at v alues that
ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UT C products described or contained
herein. UT C products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5
QW-R213-007,B