UNISONIC TECHNOLOGIES CO., 2SD1803 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1803 applies to relay drivers, high-speed inverters, converters ,and other general high-current switching applications. 1 FEATURES *Low collector-to-emitter saturation voltage. *High current and high fT. *Excellent linerarity of hFE. *Fast switching time. TO-251 *Pb-free plating product number:2SD1803L PIN CONFIGURATION PIN NO. PIN NAME 1 BASE 2 COLLECTOR 3 EMITTER ORDERING INFORMATION Order Number Normal Lead free 2SD1803-TM3-T 2SD1803L-TM3-T www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Package Packing TO-251 Tube 1 QW-R213-007,B 2SD1803 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current PULSE Tc=25℃ Power Dissipation Ta=25℃ SYMBOL VCBO VCEO VEBO IC ICM RATINGS 60 50 6 5 8 20 1 +150 -40 ~ +150 PD Junction Temperature Storage Temperature TJ TSTG UNIT V V V A A W W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage Turn-on Time Storage Time Fall Time SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) tON tS tF TEST CONDITIONS IC=10µA, IE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=4A VCE=5V, Ic=1A VCB=10V, f=1MHz IC=3A, IB=0.15A IC=3A, IB=0.15A See Test Circuit See Test Circuit See Test Circuit MIN 60 50 6 TYP MAX 1 1 400 70 35 180 40 220 0.95 50 500 20 400 1.3 UNIT V V V µA µA MHz pF mV V ns ns ns CLASSIFICATION OF hFE 1 RANK RANGE Q 70 ~ 140 R 100 ~ 200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw S 140 ~ 280 T 200 ~ 400 2 QW-R213-007,B 2SD1803 NPN EPITAXIAL SILICON TRANSISTOR TEST CIRCUIT IB1 INPUT RB OUTPUT IB2 RL VR 50 + 100μ + 470μ 25V PW=20μS Duty Cycle≦1% -5V Ic=10IB1 =-10IB2=2A (Unit : (resistance : Ω, capacitance : F)) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 QW-R213-007,B 2SD1803 TYPICAL CHARACTERICS Ic -VCE Ic -VCE 5 5 25mA 4 30mA 35mA 40mA 50mA 45mA 20mA 3 15mA 2 10mA 5mA 1 0 0 4 Colletcor Current, Ic (A) Colletcor Current, Ic (A) 30mA 20mA 3 0.8 1.2 15mA 10mA 2 5mA 1 IB =0 0.4 25mA 1.6 IB =0 0 0 2.0 2 Collector to Emitter Voltage, VCE (V) 4 6 hFE -I c Ta=75℃ 2 Ta=25℃ 0.2 0.4 0.8 0.6 1.0 Ta=75℃ 3 2 100 Ta=25℃ 7 5 Ta=-25℃ 3 Ta=-25℃ 1 V CE=2V 7 5 DC Current Gain, hFE Colletcor Current, Ic (A) VCE=2V 4 0 0 10 1000 5 3 8 Collector to Emitter Voltage, VCE (V) Ic -VBE 6 2 10 2 3 5 7 5 7 0.01 0.1 2 3 5 71.0 1.2 2 3 5 7 10 Collector Current, IC (A) Base to Emitter Voltage, V BE (V) fT -I c Cob -VcB 5 1000 VCE=5V 7 Output Capacitance, Cob (pF) Gain-Bandwidth Product,fT -MHz ■ NPN EPITAXIAL SILICON TRANSISTOR 3 2 100 7 5 3 2 f=1MHz 3 2 100 7 5 3 2 10 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Colletcor Current, Ic (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Colletcor to Base Voltage, VCB (V) 4 QW-R213-007,B 2SD1803 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERICS(cont.) VCE(sat) -Ic VBE(sat) -Ic 10 Ic/IB=20 3 2 1000 7 5 3 2 Ta=75℃ 100 7 5 3 2 Ta=25℃ Base to Emitter Saturation Voltage, VBE(sat) (V) Collector to Emitter Saturation Voltage, VCE (sat) (mV) 5 5 3 2 Ta=-25℃ 1.0 7 5 Ta=-25℃ 10 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 Ic/IB=20 7 Ta=25℃ Ta=75℃ 3 2 3 5 7 1.0 2 3 5 7 10 5 7 0.01 2 3 5 7 0.1 2 3 5 710 Collector Current, IC (A) Collector Current, IC (A) PD -Ta Ic DC 100ms ℃ 25 c= ℃ 25 a= nT t io ra pe O nT tio ra pe O C 0.1 7 5 3 2 Tc=25℃ 0.01 0.1 2 3 5 7 1.0 24 1ms Power Dissipation, PD (W) 10ms Icp D Collector Current, IC (A) ASO 2 10 7 5 3 2 1.0 7 5 3 2 20 16 12 8 4 No heat sink 2 3 5 7 10 2 3 5 7100 Colletcor to Emitter Voltage, VCE (V) 1 00 20 40 60 80 100 120 140 160 Ambient Temperature, Ta (℃) UTC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 QW-R213-007,B