UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) SYMBOL VALUE UNIT Collector-Base Voltage PARAMETER VCBO -600 V Collector-Emitter Voltage VCEO -600 V Emitter-Base Voltage VEBO -7.0 V PC 1.0 W Ic -1.0 A Icp *1 -2.0 A Collector Power Dissipation Collector Current(DC) Collector Current(PULSE) Junction Temperature Tj 150 °C Storage Temperature TSTG -55 to +150 °C *1 : PW≦10ms,Duty Cycle≦50% ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cut-Off Current ICBO VCB= -600V,IE=0 -10 µA Emitter Cut-Off Current IEBO VEB= -7.0V,Ic=0 -10 µA DC Current Gain hFE1*2 VCE= -5.0V,Ic= -0.1A 30 58 DC Current Gain hFE2*2 VCE= -5.0V,Ic= -0.5A 5 19 Collector-Emitter Saturation Voltage VCE(sat)*2 Ic= -0.3A,IB= -0.06A -0.28 -0.5 Base-Emitter Saturation Voltage VBE(sat)*2 Ic= -0.3A,IB= -0.06A -0.85 -1.2 fT VCE= -10V, IE=0.1A Gain Bandwidth Product UTC UNISONIC TECHNOLOGIES 10 120 28 V V MHz CO. LTD 1 QW-R204-010,B UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR TYP MAX UNIT Output Capacitance PARAMETER SYMBOL Cob VCB= -10V, IE=0, f=1.0MHz 42 50 pF Turn-On Time ton Ic =-0.5A,RL=500Ω 0.1 0.5 µs Storage Time tstg IB1= -IB2= -0.1A 3.5 5.0 µs Vcc =-250V 0.08 0.5 µs Fall Time tf TEST CONDITIONS MIN 2 * : Pulsed PW≦350µs,Duty Cycle≦2% CLASSIFICATION OF hFE1 RANK M L K RANGE 30-60 40-80 60-120 TYPICAL CHARACTERISTICS Collector Current vs. Collector to Emitter Voltage -100 IB=1.8mA 300 hFE -DC Current Gain IB=1.6mA IB=1.4mA -60 IB=1.2mA IB=1.0mA -40 IB=0.8mA IB=0.6mA -20 100 30 10 3 IB=0.4mA 0 0 -2.0 IB=0.2mA -4.0 -6.0 1 -8.0 -10 -0.02 -0.1 -0.2 -0.002 -0.005 -0.01 -0.05 Collector Current vs. Base to Emitter Voltage VCE= -5.0V -0.3 -0.1 -0.03 -0.01 -0.003 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 VBE -Base to Emitter Voltage (V) UTC VCE(sat)-Collecotr Saturation Voltage (V) VBE(sat)-Base Saturation Voltage (V) -1.0 -0.5 -1.0 2.0 Ic -Collector Current (A) VCE -Collector to Emitter Voltage (V) Ic -Collector Current (mA) DC Durrent Gain vs. Collector Current VCE= -5.0V IB= 2.0 mA Ic -Collector Current (mA) -80 1000 -3.0 Collector And Base Saturation Voltage vs.Collector Current Ic =5IB VBE(sat) -1.0 -0.3 -0.1 VcE(sat) -0.03 -0.005 -0.01 -0.02 -0.05 -0.1 -0.2 Ic -Collector Current (A) UNISONIC TECHNOLOGIES CO. LTD -0.5 2 QW-R204-010,B UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR Turn Off Time vs.Collecotr Current tstg Ic /IB =5 VCE= -250V IB1= -IB2 2.0 1.0 0.5 0.2 tf 0.1 -0.1 -0.3 -1.0 Ic -Collector Current (A) -0.03 fT-Gain Bandwidth Product (MHz) tsw-Switching Time (μS) 5.0 100 VCB= -5.0V 50 20 10 5.0 2.0 1.0 -0.002 -3.0 Output Capacitance vs.Collecotor To Base Voltage Cob -Output Capacitance (pF) IE=0 100 50 20 10 5.0 2.0 -3.0 -100 -300 -10 -30 VCB-Collector to Base Voltage (V) Pc-Collector Power Dissipation (W) 1.2 200 Gain Bandwidth Product vs.Collector Current -0.005-0.01 -0.02 -0.05 -0.1 -0.2 Ic -Collector Current (mA) Collector Power Dissipation vs.Ambient Temperature Free Air 1.0 0.8 0.6 0.4 0.2 0 0 100 125 25 50 75 Ta -Ambient Temperature (℃) 150 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R204-010,B