<C band Internally Matched Power GaAs FET> MGFC47B3538B 3.5 – 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5 – 3.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING FEATURES Crass AB operation Internally matched to 50(ohm) High output power: Po(SAT) = 50 W (typ.) High power gain: GP = 10 dB (TPE.) @Po = 37dBm Distortion: EVM = 2.0% (TPE.) @ Po = 37dBm Recommended Bias Condition Vd = 12(V) ID = 1.5 (A) Rg = 10 ohm GF-60 ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO MAXID PT *1 Tch Tstg Parameter Gate to drain voltage Gate to source voltage Maximum drain current Total power dissipation Channel temperature Storage temperature (Ta=25deg.C) Ratings -15 -10 12 115 175 -55 / +150 Unit V V A W deg.C deg.C *1 : Tc=25deg.C ELECTRICAL CARACTERISTICS Symbol VGS(off) Po(SAT) GP ID EVM *2 Rth(ch-c) *3 (Ta=25deg.C) Parameter Gate to source cut-off voltage Output power Power gain Drain current Error Vector Magnitude Thermal resistance Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Test conditions VDS = 3V , ID = 100mA VDS=12V, ID(RF off)=1.5A, f=3.5-3.8GHz VDS=12V, ID(RF off)=1.5A, f=3.5-3.8GHz Pout=37dBm delta Vf method *2 :WiMAX Downlink , 64QA M-3/4, Channel Bandwidth: 7MHz *3 : Channel-case Publication Date : May, 2012 1 Min. -0.5 9.0 - Limits Typ. 47 10.5 2.0 1.5 0.65 Unit Max. -3.0 3 2.5 1.2 V dBm dB A % d eg.C/W <C band internally matched power GaAs FET> MGFC42V7177 7.1 - 7.7GHz BAND / 16W EVM(@WiMAX) vs . Pout characteristics of MGFC47B3538B-01 f=3.6GHz f=3.8GHz 65 12 60 12 60 12 60 12 60 11 55 11 55 11 55 11 55 10 50 10 50 10 50 10 50 9 45 9 45 9 45 9 45 40 8 40 8 40 8 40 7 35 Gp ED 6 30 5 25 4 EVM 7 35 Gp ED 6 30 7 35 EVM Gp 6 30 ED ED(%) EVM Gp（ｄB) EVM(%) 13 ED(%) 65 Gp（ｄB) EVM(%) 13 Gp（ｄB) EVM(%) 65 ED(%) 13 8 Gp（ｄB) EVM(%) f=3.7GHz 65 7 35 EVM Gp 6 30 ED 5 25 5 25 5 25 20 4 20 4 20 4 20 3 15 3 15 3 15 3 15 2 10 2 10 2 10 2 10 1 5 1 5 1 5 1 5 0 0 0 0 30 0 0 30 0 30 32 34 36 38 40 30 Pout（ｄ Bm) ○EVM(@WiMax) 32 34 36 38 40 Pout（ｄBm) vs. FREQ 34 36 38 40 characteristics of MGFC47B3538B-01 ○GP(@WiMax) vs. FREQ EVM@Pout=40.0dBm 2.5 36 38 40 GP@Pout=37.0dBm 11.5 11 EVM@Pout=39.0dBm GP(dB) 2 EVM@Pout=38.0dBm 1.5 34 characteristics of MGFC47B3538B-01 12 3 0 32 Pout（ｄBm) Pout（ｄBm) 3.5 EVM(%) 32 1 10.5 10 9.5 EVM@Pout=37.0dBm 0.5 9 0 8.5 3.4 3.5 3.6 3.7 3.8 3.9 3.4 FREQ(GHz) 3.5 3.6 3.7 FREQ(GHz) Publication Date : May, 2012 2 3.8 3.9 ED(%) f=3.5GHz 13 <C band internally matched power GaAs FET> MGFC42V7177 7.1 - 7.7GHz BAND / 16W MGFC47B3538B RF TEST FIXTURE C1,C2,C7,C8=GR708 8pF C3,C5=1000pF C4=100nF C6=470nF R1= 10ohm R2=CR10 51ohm Board material:Teflon t=0.8mm Specific dielectric constant=2.6 UNIT:(mm) Publication Date : May, 2012 3 <C band internally matched power GaAs FET> MGFC42V7177 7.1 - 7.7GHz BAND / 16W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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