< X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 – 14.50 GHz BAND / 6W DESCRIPTION The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in 13.75 – 14.50 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB=6W (TYP.) @f=13.75 – 14.50GHz High linear power gain GLP=8.0dB (TYP.) @f=13.75 – 14.50GHz High power added efficiency P.A.E.=30% (TYP.) @f=13.75 – 14.50GHz APPLICATION 13.75 – 14.50 GHz band power amplifiers QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS VDS=10V ID=1.5A RG=100ohm Absolute maximum ratings Symbol VGDO Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. (Ta=25C) Parameter Gate to drain breakdown voltage Ratings Unit -15 V VGSO Gate to source breakdown voltage -10 V PT *1 Total power dissipation 37.5 W Tch Cannel temperature 175 C Tstg Storage temperature -65 to +175 C *1 : Tc=25C Electrical characteristics Symbol (Ta=25C) Parameter Test conditions Limits Unit Min. Typ. Max. -4 V VGS(off) P1dB Gate to source cut-off voltage VDS=3V,ID=21mA -1 -1.5 Output power at 1dB gain compression VDS=10V,ID(RF off)=1.5A 37 38 - dBm GLP Linear Power Gain f=13.75 – 14.50GHz 7 8 - dB ID Drain current PAE Power added efficiency Rth(ch-c) *2 Thermal resistance 1.8 delta Vf method *2 : Channel-case Publication Date : Apr., 2011 1 A - 30 - % - 3.6 4 C/W < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 – 14.50 GHz BAND / 6W MGFK38A3745 TYPICAL CHARACTERISTICS f = 13.75GHz Pout, Glp, PAE, Id, Ig vs. Pin f = 14.125GHz f = 14.5GHz Test Condition : Vds=10V,Idq=1.5A, Rg=100ohm,Ta=25deg.C f = 13.75GHz IM3, IM5 vs. Pin f = 14.125GHz Test Condition : Vds=10V,Idq=1.5A,Rg=100ohm,Ta=25deg.C 2-tone test,Δf=10MHz Publication Date : Apr., 2011 2 f = 14.50GHz < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 – 14.50 GHz BAND / 6W MGFK38A3745 S-parameters( Ta=25deg.C , VDS=10(V),IDS=1.5(A) ) S Parameters(Typ.) f (GHz) S11 S21 S12 S22 Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) 13.0 0.81 171.04 1.63 -76.74 0.02 -16.21 0.59 137.23 13.1 0.78 165.69 1.73 -83.87 0.02 -35.59 0.59 130.28 13.2 0.75 159.52 1.85 -91.37 0.03 -56.56 0.59 123.52 13.3 0.71 152.49 1.96 -99.00 0.03 -74.01 0.59 117.33 13.4 0.68 145.21 2.07 -107.14 0.04 -91.03 0.59 109.70 13.5 0.64 137.10 2.19 -115.49 0.04 -107.57 0.58 102.62 13.6 0.58 128.83 2.32 -124.10 0.05 -119.61 0.57 94.61 13.7 0.53 119.41 2.45 -133.09 0.06 -133.66 0.56 85.76 13.8 0.46 107.91 2.57 -142.78 0.07 -145.04 0.54 75.60 13.9 0.38 94.82 2.69 -153.07 0.08 -158.70 0.51 64.08 14.0 0.30 78.06 2.80 -163.74 0.09 -171.17 0.49 51.72 14.1 0.22 55.02 2.88 -174.75 0.10 175.35 0.46 36.88 14.2 0.15 18.65 2.95 173.32 0.11 160.87 0.42 19.98 14.3 0.14 -35.59 2.95 160.62 0.12 148.25 0.38 1.33 14.4 0.19 -79.67 2.88 148.21 0.12 134.98 0.36 -19.05 14.5 0.26 -104.31 2.75 136.23 0.12 122.82 0.34 -40.14 14.6 0.33 -120.66 2.57 125.07 0.11 111.09 0.32 -59.43 14.7 0.39 -132.01 2.40 115.11 0.11 102.41 0.31 -76.85 14.8 0.45 -141.21 2.23 105.99 0.11 93.61 0.33 -91.26 14.9 0.50 -148.69 2.08 97.52 0.10 85.62 0.34 -103.83 15.0 0.54 -155.43 1.94 89.56 0.10 77.89 0.36 -113.31 Publication Date : Apr., 2011 3 < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 – 14.50 GHz BAND / 6W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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