MITSUBISHI MGFS45A2527B_11

< L/S band internally matched power GaAs FET >
MGFS45A2527B
2.5 – 2.7 GHz BAND / 32W
OUTLINE DRAWING
DESCRIPTION
The MGFS45V2527B is an internally impedance-matched
GaAs power FET especially designed for use in 2.5 – 2.7
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
Unit : millimeters (inches)
2.0MIN.
(0.079MIN.)
24.0± 0.3(0.945±0.012)
0.6± 0.15
(0.024± 0.006)
2
2.0MIN.
(0.079MIN.)
17.4±0.2
(0.685±0.008)
Class A operation
Internally matched to 50(ohm) system
 High output power
P1dB=32W (TYP.) @f=2.5 – 2.7GHz
 High power gain
GLP=12.0dB (TYP.) @f=2.5 – 2.7GHz
 High power added efficiency
P.A.E.=40% (TYP.) @f=2.5 – 2.7GHz
 Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L
1
8.0±0.2
(0.315±0.008)
FEATURES
APPLICATION
3
QUALITY
 GG
1.4
(0.055)
0.1±0.05
3.65±0.4
(0.144±0.016)
15.8(0.622)
RECOMMENDED BIAS CONDITIONS
 VDS=10V  ID=6.5A  RG=25ohm
1
GF-51
2.4±0.2
(0.094±0.008)
20.4± 0.2(0.803± 0.008)
 item 01 : 2.5 – 2.7 GHz band power amplifier
 item 51 : 2.5 – 2.7 GHz band digital radio communication
GATE
2
SOURCE(FLANGE)
3
DRAIN
Keep Safety first in your circuit designs!
Absolute maximum ratings
Symbol
VGDO
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
(Ta=25C)
Parameter
Gate to drain breakdown voltage
Ratings
Unit
-20
V
VGSO
Gate to source breakdown voltage
-10
V
PT *1
Total power dissipation
107
W
Tch
Cannel temperature
175
C
Tstg
Storage temperature
-65 to +175
C
*1 : Tc=25C
Electrical characteristics
Symbol
(Ta=25C)
Parameter
Test conditions
Limits
Min.
Unit
Typ.
Max.
Gate to source cut-off voltage
VDS=3V,ID=84mA
-
-
-5
V
Output power at 1dB gain compression
VDS=10V,ID(RF off)=6.5A
44
45
-
dBm
GLP
Linear Power Gain
f=2.5 – 2.7GHz
11
12
-
dB
ID
Drain current
-
7.5
-
A
P.A.E.
Power added efficiency
-
40
-
%
IM3 *2
3rd order IM distortion
-42
-45
-
dBc
Rth(ch-c) *3
Thermal resistance
-
1.2
1.4
C/W
VGS(off)
P1dB
delta Vf method
*2 :item -51 ,2 tone test,Po=34.5dBm Single Carrier Level ,f=2.5,2.6,2.7GHz,delta f=5MHz
*3 :Channel-case
Publication Date : Apr., 2011
1
< L/S band internally matched power GaAs FET >
MGFS45A2527B
2.5 – 2.7 GHz BAND / 32W
MGFS45A2527B TYPICAL CHARACTERISTICS
Pout , PAE , GAIN vs. Pin
18
50
17
45
40
16
35
f= 2 .7 GHz
40
16
40
16
15
35
15
35
15
30
14
30
14
30
14
25
13
25
13
25
13
20
12
20
12
20
12
15
11
15
11
15
11
10
10
10
10
10
10
5
9
5
9
5
9
8
0
8
0
0
15
20
25
30
Pin(dBm)
35
Gp(dB)
40
15
20
25
30
35
Po(dBm)　P.A.E（％）
45
Po(dBm)
PAE(%)
GAIN(dB)
Gp(dB)
17
Po(dBm)　P.A.E（ ％）
50
45
Po(dBm)　P.A.E（％）
f= 2. 6GHz
18
Po(dBm)
PAE(%)
G AIN(dB)
40
20
25
14.5
45.5
30
35
40
Pin(dBm)
P1dB vs. f
q
17
8
15
Pin(dBm)
GAIN vs. f
18
Po(dBm)
PAE(%)
GAIN(dB)
Gp(dB)
f=2 .5 GHz
50
IM3 vs. f
y
q
-51
y
14
-50
45
13.5
13
12.5
IM3(dBC)
P1dB(dBm)
GLP(dB)
-49
44.5
-48
44
-47
12
43.5
Ｖｄｓ=10(Ｖ)　Ｉｄｓ(ＲＦOFF）=6.5(Ａ)
11
Ｖｄｓ=10(Ｖ)　Ｉｄｓ(ＲＦOFF）=6.5(Ａ)
Ｖｄｓ=10(Ｖ)　Ｉｄｓ(ＲＦOFF）=6.5(Ａ)
11.5
-46
43
2.4
2.5
2.6
2.7
Freq(GHz)
2.8
-45
2.4
2.5
2.6
Freq(GHz)
Publication Date : Apr., 2011
2
2.7
2.8
2.4
2.5
2.6
Freq(GHz)
2.7
2.8
< L/S band internally matched power GaAs FET >
MGFS45A2527B
2.5 – 2.7 GHz BAND / 32W
MGFS45A2528B S-parameters( Ta=25deg.C , VDS=10(V),IDS=6.5(A) )
Freq
2.00
2.05
2.10
2.15
2.20
2.25
2.30
2.35
2.40
2.45
2.50
2.55
2.60
2.65
2.70
2.75
2.80
2.85
2.90
2.95
3.00
S11
(mag)
0.88
0.87
0.85
0.82
0.79
0.76
0.72
0.66
0.59
0.51
0.40
0.28
0.16
0.07
0.12
0.22
0.30
0.38
0.45
0.51
0.58
(ang)
74.01
67.63
60.94
53.50
45.38
36.25
26.06
14.95
1.86
-13.16
-31.23
-51.53
-78.16
-146.41
127.83
95.47
74.56
56.47
40.38
24.35
8.80
S21
(mag)
1.42
1.56
1.72
1.91
2.12
2.38
2.66
2.99
3.34
3.70
4.01
4.24
4.32
4.27
4.09
3.80
3.51
3.18
2.88
2.58
2.30
(ang)
-115.63
-124.88
-134.47
-144.48
-155.53
-167.27
-179.79
166.21
150.86
133.43
115.11
95.76
75.62
55.31
35.45
16.42
-1.65
-19.06
-35.49
-51.73
-67.16
S12
(mag)
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.03
0.03
0.03
0.03
0.03
0.03
0.03
(ang)
-79.30
-86.26
-102.29
-111.11
-129.00
-140.42
-159.19
176.25
155.14
126.07
98.68
71.43
43.53
15.41
-11.45
-33.34
-54.63
-75.33
-94.35
-111.68
-126.90
S22
(mag)
0.79
0.77
0.75
0.73
0.70
0.67
0.64
0.59
0.54
0.48
0.43
0.39
0.38
0.40
0.45
0.49
0.53
0.57
0.60
0.62
0.64
This S-Parameter data show measurements performed on each single-ended FET
Publication Date : Apr., 2011
3
(ang)
101.57
95.64
89.25
83.20
75.83
67.92
58.86
47.67
34.08
16.39
-5.01
-31.79
-61.12
-87.87
-109.18
-125.33
-137.70
-147.32
-154.95
-161.21
-166.56
< L/S band internally matched power GaAs FET >
MGFS45A2527B
2.5 – 2.7 GHz BAND / 32W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
4