< L/S band internally matched power GaAs FET > MGFS45V2123A 2.1 – 2.3 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 – 2.3 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. 2.0MIN. (0.079MIN.) 24.0± 0.3(0.945±0.012) APPLICATION 2 3 QUALITY IG 1.4 (0.055) RECOMMENDED BIAS CONDITIONS VDS=10V ID=6.5A RG=25ohm Absolute maximum ratings GATE 2 SOURCE(FLANGE) 3 DRAIN (Ta=25C) Ratings Unit Gate to drain breakdown voltage -15 V VGSO Gate to source breakdown voltage -15 V ID Drain current 22 A IGR Reverse gate current -61 mA IGF Forward gate current 76 mA PT *1 Total power dissipation 100 W Tch Cannel temperature 175 C Tstg Storage temperature -65 to +175 C Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. *1 : Tc=25C Symbol 1 GF-51 Parameter Electrical characteristics 0.1±0.05 3.65±0.4 (0.144±0.016) 15.8(0.622) 2.4±0.2 (0.094±0.008) 20.4± 0.2(0.803± 0.008) item 01 : 2.1 – 2.3 GHz band power amplifier item 51 : 2.1 – 2.3 GHz band digital radio communication VGDO 0.6± 0.15 (0.024± 0.006) 2.0MIN. (0.079MIN.) 17.4±0.2 (0.685±0.008) Class A operation Internally matched to 50(ohm) system High output power P1dB=32W (TYP.) @f=2.1 – 2.3GHz High power gain GLP=12.0dB (TYP.) @f=2.1 – 2.3GHz High power added efficiency P.A.E.=45% (TYP.) @f=2.1 – 2.3GHz Low distortion [item -51] IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L 1 8.0±0.2 (0.315±0.008) FEATURES Symbol Unit : millimeters (inches) (Ta=25C) Parameter Test conditions Limits Min. Unit Typ. Max. VGS(off) P1dB Gate to source cut-off voltage VDS=3V,ID=60mA - - -5 V Output power at 1dB gain compression VDS=10V,ID(RF off)=6.5A 44 45 - dBm GLP Linear Power Gain f=2.1 – 2.3GHz 11 12 - dB ID Drain current - 7.5 - A P.A.E. Power added efficiency - 45 - % IM3 *2 3rd order IM distortion -42 -45 - dBc Rth(ch-c) *3 Thermal resistance - - 1.5 C/W delta Vf method *2 :item -51 ,2 tone test,Po=34.5dBm Single Carrier Level ,f=2.1,2.2,2.3GHz,delta f=5MHz *3 :Channel-case Publication Date : Apr., 2011 1 < L/S band internally matched power GaAs FET > MGFS45V2123A 2.1 – 2.3 GHz BAND / 32W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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