MITSUBISHI MGFK41A4045

< X/Ku band internally matched power GaAs FET >
MGFK41A4045
14.0 – 14.5 GHz BAND / 12W
DESCRIPTION
OUTLINE DRAWING
The MGFK41A4045 is an internally impedance-matched
GaAs power FET especially designed for use in 14.0 – 14.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
Unit : millimeters
21.0 +/-0.3
2MIN
(1)
Internally impedance matched
 High output power
P1dB=41dBm (TYP.) @f=14.0 – 14.5GHz
 High linear power gain
GLP=7.0dB (TYP.) @f=14.0 – 14.5GHz
0.6 +/-0.15
(2)
12.9 +/-0.2
(2 )
11.3
FEATURES
2MIN
R-1.6
(3 )
APPLICATION
 For use in 14.0 – 14.5 GHz band amplifiers
10.7
17.0 +/-0.2
QUALITY GRADE
12.0
0.2
RECOMMENDED BIAS CONDITIONS
(1 ) GATE
(2 ) SOURCE (FLANGE)
(3 ) DRAIN
GF-8
 VDS=10V  ID=3.0A  RG=50ohm
Absolute maximum ratings
Symbol
Keep Safety first in your circuit designs!
(Ta=25C)
Parameter
2.6 +/-0.2
0.1
1.6
4.5 +/-0.4
 IG
Ratings
Unit
VGDO
Gate to drain breakdown voltage
-15
V
VGSO
Gate to source breakdown voltage
-10
V
ID
Drain current
11
A
IGR
Reverse gate current
-36
mA
IGF
Forward gate current
72
mA
PT *1
Total power dissipation
68.2
W
Tch
Cannel temperature
175
C
Tstg
Storage temperature
-65 to +175
C
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
*1 : Tc=25C
Electrical characteristics
Symbol
(Ta=25C)
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
-
8
-
A
S
IDSS
Saturated drain current
VDS=3V,VG=0V
gm
Transconductance
VDS=0V,ID=3.0A
-
4
-
VGS(off)
P1dB
Gate to source cut-off voltage
VDS=3V,ID=42mA
-1
-1.5
-4
V
Output power at 1dB gain compression
VDS=10V,ID(RF off)=3.0A
40
41
-
dBm
f=14.0 – 14.5GHz
6
7
-
dB
-
25
-
%
-
1.8
2.2
C/W
GLP
Linear Power Gain
PAE
Power added efficiency
Rth(ch-c) *2
Thermal resistance
delta Vf method
*2 : Channel-case
Publication Date : Apr., 2011
1
< X/Ku band internally matched power GaAs FET >
MGFK41A4045
14.0 – 14.5 GHz BAND / 12W
MGFK41A4045 TYPICAL CHARACTERISTICS
Pout, Glp, PAE, Id, Ig vs. Pin
f = 14.0GHz
f = 14.25GHz
Pout
45
40
Gain
Id RF
Id RF
40
Ig RF
30
25
20
15
10
PAE
35
Pout(dBm), Glp(dB), PAE(%), Id(A), Ig(mA
35
30
25
20
15
10
35
30
25
20
15
10
5
5
5
0
0
0
-5
-5
20
Id RF
40
PAE
Pout(dBm), Glp(dB), PAE(%), Id(A), Ig(mA
Pout(dBm), Glp(dB), PAE(%), Id(A), Ig(mA
Gain
Ig RF
PAE
Pout
45
Gain
Ig RF
f = 14.5GHz
Pout
45
25
30
35
40
-5
20
25
30
Pin(dBm)
35
40
20
25
Pin(dBm)
30
35
40
Pin(dBm)
Test Condition
Vds=10V,Idq=3.0A, Rg=50ohm,Ta=25deg.C
Pout , IM3 vs. Pin
f = 14.5GHz
-10
30
-20
30
-20
30
-20
25
-30
25
-30
25
-30
20
-40
Pout
20
-50
20
25
20
30
IM3
15
-50
15
Pin(dBm)(S.C.L)
20
25
Pin(dBm)(S.C.L)
Test Condition
Vds=10V,Idq=3.0A,Rg=50ohm,Ta=25deg.C
2-tone test,Δf=10MHz
Publication Date : Apr., 2011
2
-40
Pout
IM3
15
15
-40
Pout
IM3
Pout(dBm)(S.C.L)
35
IM3(dBc)
-10
Pout(dBm)(S.C.L)
35
30
15
-50
15
20
25
Pin(dBm)(S.C.L)
30
IM3(dBc)
f = 14.25GHz
-10
IM3(dBc)
Pout(dBm)(S.C.L)
f = 14.0GHz
35
< X/Ku band internally matched power GaAs FET >
MGFK41A4045
14.0 – 14.5 GHz BAND / 12W
MGFK41A4045 S-parameters( Ta=25deg.C , VDS=10(V),IDS=3(A) )
f
(GHz)
13.00
13.10
13.20
13.30
13.40
13.50
13.60
13.70
13.80
13.90
14.00
14.10
14.20
14.30
14.40
14.50
14.60
14.70
14.80
14.90
15.00
Mag.
0.738
0.716
0.693
0.665
0.633
0.593
0.546
0.493
0.434
0.369
0.303
0.238
0.176
0.118
0.106
0.156
0.225
0.281
0.335
0.381
0.413
S11
Ang(deg.)
-103.4
-109.9
-116.7
-123.8
-132.2
-140.9
-151.8
-162.0
-172.4
175.1
161.4
144.2
120.7
83.1
28.9
-12.7
-38.3
-57.4
-72.0
-86.1
-98.3
Mag.
1.278
1.349
1.427
1.517
1.607
1.705
1.809
1.896
1.976
2.059
2.132
2.192
2.241
2.268
2.263
2.217
2.134
2.018
1.885
1.750
1.616
S Parameters (TYP.)
S21
S12
Ang(deg.)
Mag.
Ang(deg.)
34.7
0.057
14.1
26.6
0.060
7.6
18.2
0.064
0.8
9.1
0.068
-6.4
-0.1
0.074
-13.6
-10.3
0.081
-22.2
-23.6
0.087
-33.8
-34.7
0.095
-42.9
-46.0
0.102
-53.5
-58.0
0.109
-63.7
-70.3
0.118
-75.4
-83.2
0.122
-88.5
-96.3
0.127
-100.8
-110.1
0.131
-113.0
-124.6
0.130
-126.2
-138.9
0.130
-138.3
-153.0
0.126
-151.4
-167.1
0.121
-163.3
179.9
0.113
-173.9
166.9
0.105
176.0
154.8
0.098
166.5
Publication Date : Apr., 2011
3
Mag.
0.668
0.649
0.628
0.609
0.588
0.559
0.521
0.482
0.434
0.383
0.324
0.266
0.215
0.176
0.166
0.179
0.216
0.266
0.318
0.353
0.368
S22
Ang(deg.)
-81.0
-87.3
-93.7
-101.0
-109.0
-118.7
-131.2
-141.7
-153.0
-167.1
177.1
159.0
135.8
104.0
64.0
28.6
0.6
-17.8
-32.7
-46.8
-59.2
< X/Ku band internally matched power GaAs FET >
MGFK41A4045
14.0 – 14.5 GHz BAND / 12W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
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Publication Date : Apr., 2011
4