< L/S band internally matched power GaAs FET > MGFS48B2122 2.11 – 2.17 GHz BAND / 60W 20.4±0.2 DESCRIPTION OUTLINE The MGFS48B2122 is a 60W push-pull type GaAs power FET especially designed for use in 2.11 – 2.17GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. 3.2±0.8 1 2 3.2±0.8 Push-pull configuration High output power Pout=60W (TYP.) @f=2.17GHz High power gain GLP=12.0dB (TYP.) @f=2.17GHz High power added efficiency P.A.E.=48% (TYP.) @f=2.17GHz 2.0±0.15 8.0±0.2 17.4±0.3 FEATURES 1 2.0±0.15 3 6.0 3 APPLICATION 2.11-2.17GHz band power amplifier for W-CDMA Base Station 24.0±0.3 IG 1.9 3.6±0.4 0.1 16.2 unit : mm 1 gate 2 source 3 drain 2.4±0.2 QUALITY GF-47 RECOMMENDED BIAS CONDITIONS Keep Safety first in your circuit designs! VDS=12V ID=2.0A RG=25ohm for each gate Absolute maximum ratings Symbol VGDO Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. (Ta=25C) Parameter Gate to drain breakdown voltage Ratings Unit -20 V VGSO Gate to source breakdown voltage -10 V PT *1 Total power dissipation 125 W Tch Cannel temperature 175 C Tstg Storage temperature -65 to +175 C *1 : Tc=25C Electrical characteristics Symbol GLP Parameter Linear Power Gain (Ta=25C) Test conditions VDS=12V,ID(RF off)=2.0A,f=2.17GHz Limits Unit Min. Typ. Max. 11 12 - dB 47 48 - dBm - 11 15 A - 48 - % - 1 1.2 C/W Pin=22dBm Pout Output Power VDS=12V,ID(RF off)=2.0A,f=2.17GHz ID Drain current Pin=39dBm P.A.E. Power added efficiency Rth(ch-c) *2 Thermal resistance delta Vf method *2 :Channel-case Publication Date : Apr., 2011 1 < L/S band internally matched power GaAs FET > MGFS48B2122 2.11 – 2.17 GHz BAND / 60W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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