MITSUBISHI MGFS48B2122_11

< L/S band internally matched power GaAs FET >
MGFS48B2122
2.11 – 2.17 GHz BAND / 60W
20.4±0.2
DESCRIPTION
OUTLINE
The MGFS48B2122 is a 60W push-pull type GaAs power FET
especially designed for use in 2.11 – 2.17GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees
high reliability.
3.2±0.8
1
2
3.2±0.8
Push-pull configuration
 High output power
Pout=60W (TYP.) @f=2.17GHz
 High power gain
GLP=12.0dB (TYP.) @f=2.17GHz
 High power added efficiency
P.A.E.=48% (TYP.) @f=2.17GHz
2.0±0.15
8.0±0.2
17.4±0.3
FEATURES
1
2.0±0.15
3
6.0
3
APPLICATION
 2.11-2.17GHz band power amplifier for W-CDMA Base Station
24.0±0.3
 IG
1.9
3.6±0.4
0.1
16.2
unit : mm
1
gate
2
source
3
drain
2.4±0.2
QUALITY
GF-47
RECOMMENDED BIAS CONDITIONS
Keep Safety first in your circuit designs!
 VDS=12V  ID=2.0A  RG=25ohm for each gate
Absolute maximum ratings
Symbol
VGDO
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
(Ta=25C)
Parameter
Gate to drain breakdown voltage
Ratings
Unit
-20
V
VGSO
Gate to source breakdown voltage
-10
V
PT *1
Total power dissipation
125
W
Tch
Cannel temperature
175
C
Tstg
Storage temperature
-65 to +175
C
*1 : Tc=25C
Electrical characteristics
Symbol
GLP
Parameter
Linear Power Gain
(Ta=25C)
Test conditions
VDS=12V,ID(RF off)=2.0A,f=2.17GHz
Limits
Unit
Min.
Typ.
Max.
11
12
-
dB
47
48
-
dBm
-
11
15
A
-
48
-
%
-
1
1.2
C/W
Pin=22dBm
Pout
Output Power
VDS=12V,ID(RF off)=2.0A,f=2.17GHz
ID
Drain current
Pin=39dBm
P.A.E.
Power added efficiency
Rth(ch-c) *2
Thermal resistance
delta Vf method
*2 :Channel-case
Publication Date : Apr., 2011
1
< L/S band internally matched power GaAs FET >
MGFS48B2122
2.11 – 2.17 GHz BAND / 60W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
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Publication Date : Apr., 2011
2